Extended-type defects created by high temperature helium implantation into silicon

M. F. Beaufort; S. E. Donnelly; S. Rousselet; M. L. David; J. F. Barbot

doi:10.1016/j.nimb.2005.08.145

Extended-type defects created by high temperature helium implantation into silicon

M. F. Beaufort, S. E. Donnelly, S. Rousselet, M. L. David, J. F. Barbot

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Following helium implantation (50 keV, 5 × 10¹⁶ cm ^-2) at 800 °C in silicon, only {1 1 3} defects are present spreading out beyond the maximum of the damage distribution. Both linear rod-like defects as well as so-called ribbon-like {1 1 3} defects are observed. During annealing at 800 °C, the number of interstitials in ribbon-like defects appears to increase at the expense of the rod-like defects. After annealing at 1000 °C, only a row of dislocation loops is observed. These results suggest that the formation energy of the ribbon-like defects may be lower than that of the rod-like defects.

Original language	English
Pages (from-to)	565-567
Number of pages	3
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	242
Issue number	1-2
Early online date	6 Oct 2005
DOIs	https://doi.org/10.1016/j.nimb.2005.08.145
Publication status	Published - 1 Jan 2006
Externally published	Yes

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title = "Extended-type defects created by high temperature helium implantation into silicon",

abstract = "Following helium implantation (50 keV, 5 × 1016 cm -2) at 800 °C in silicon, only \{1 1 3\} defects are present spreading out beyond the maximum of the damage distribution. Both linear rod-like defects as well as so-called ribbon-like \{1 1 3\} defects are observed. During annealing at 800 °C, the number of interstitials in ribbon-like defects appears to increase at the expense of the rod-like defects. After annealing at 1000 °C, only a row of dislocation loops is observed. These results suggest that the formation energy of the ribbon-like defects may be lower than that of the rod-like defects.",

keywords = "Defects, Helium, Ion implantation, Silicon, TEM",

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doi = "10.1016/j.nimb.2005.08.145",

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T1 - Extended-type defects created by high temperature helium implantation into silicon

AU - Beaufort, M. F.

AU - Donnelly, S. E.

AU - Rousselet, S.

AU - David, M. L.

AU - Barbot, J. F.

PY - 2006/1/1

Y1 - 2006/1/1

N2 - Following helium implantation (50 keV, 5 × 1016 cm -2) at 800 °C in silicon, only {1 1 3} defects are present spreading out beyond the maximum of the damage distribution. Both linear rod-like defects as well as so-called ribbon-like {1 1 3} defects are observed. During annealing at 800 °C, the number of interstitials in ribbon-like defects appears to increase at the expense of the rod-like defects. After annealing at 1000 °C, only a row of dislocation loops is observed. These results suggest that the formation energy of the ribbon-like defects may be lower than that of the rod-like defects.

AB - Following helium implantation (50 keV, 5 × 1016 cm -2) at 800 °C in silicon, only {1 1 3} defects are present spreading out beyond the maximum of the damage distribution. Both linear rod-like defects as well as so-called ribbon-like {1 1 3} defects are observed. During annealing at 800 °C, the number of interstitials in ribbon-like defects appears to increase at the expense of the rod-like defects. After annealing at 1000 °C, only a row of dislocation loops is observed. These results suggest that the formation energy of the ribbon-like defects may be lower than that of the rod-like defects.

KW - Defects

KW - Helium

KW - Ion implantation

KW - Silicon

KW - TEM

UR - https://www.scopus.com/pages/publications/28544447244

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DO - 10.1016/j.nimb.2005.08.145

M3 - Article

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SN - 0168-583X

VL - 242

SP - 565

EP - 567

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2

ER -

Extended-type defects created by high temperature helium implantation into silicon

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