Far-infrared absorption studies of Be acceptors in δ-doped GaAs/AlAs multiple quantum wells

Weimin Zheng; M. P. Halsall; P. Harrison; M. J. Steer

doi:10.1007/s11433-006-2008-9

Far-infrared absorption studies of Be acceptors in δ-doped GaAs/AlAs multiple quantum wells

Weimin Zheng, M. P. Halsall, P. Harrison, M. J. Steer

Research output: Contribution to journal › Article › peer-review

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Abstract

We report a far-infrared absorption study of internal transitions of shallow Be acceptors in both bulk GaAs and a series of δ-doped GaAs/AlAs multiple quantum well samples with well thicknesses of 20, 15 and 10 nm. Low temperature far-infrared absorption measurements clearly show three principal absorption lines due to transitions of Be-acceptor states from the ground state to the first three odd-parity excited states, respectively. Using a variational principle, the 2 p-1 s transition energies of quantum confined Be acceptors are calculated as a function of the well width. It is found that the theoretical calculation of the 2 p_z → 1 s transitions is in good agreement with the D-like line experimental data.

Original language	English
Pages (from-to)	702-708
Number of pages	7
Journal	Science in China, Series G: Physics Astronomy
Volume	49
Issue number	6
DOIs	https://doi.org/10.1007/s11433-006-2008-9
Publication status	Published - 1 Dec 2006
Externally published	Yes

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title = "Far-infrared absorption studies of Be acceptors in δ-doped GaAs/AlAs multiple quantum wells",

abstract = "We report a far-infrared absorption study of internal transitions of shallow Be acceptors in both bulk GaAs and a series of δ-doped GaAs/AlAs multiple quantum well samples with well thicknesses of 20, 15 and 10 nm. Low temperature far-infrared absorption measurements clearly show three principal absorption lines due to transitions of Be-acceptor states from the ground state to the first three odd-parity excited states, respectively. Using a variational principle, the 2 p-1 s transition energies of quantum confined Be acceptors are calculated as a function of the well width. It is found that the theoretical calculation of the 2 pz → 1 s transitions is in good agreement with the D-like line experimental data.",

keywords = "Far-infrared absorptions, GaAs/AlAs multiple quantum wells, Shallow acceptor impurities, δ-doped",

author = "Weimin Zheng and Halsall, {M. P.} and P. Harrison and Steer, {M. J.}",

year = "2006",

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TY - JOUR

T1 - Far-infrared absorption studies of Be acceptors in δ-doped GaAs/AlAs multiple quantum wells

AU - Zheng, Weimin

AU - Halsall, M. P.

AU - Harrison, P.

AU - Steer, M. J.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - We report a far-infrared absorption study of internal transitions of shallow Be acceptors in both bulk GaAs and a series of δ-doped GaAs/AlAs multiple quantum well samples with well thicknesses of 20, 15 and 10 nm. Low temperature far-infrared absorption measurements clearly show three principal absorption lines due to transitions of Be-acceptor states from the ground state to the first three odd-parity excited states, respectively. Using a variational principle, the 2 p-1 s transition energies of quantum confined Be acceptors are calculated as a function of the well width. It is found that the theoretical calculation of the 2 pz → 1 s transitions is in good agreement with the D-like line experimental data.

AB - We report a far-infrared absorption study of internal transitions of shallow Be acceptors in both bulk GaAs and a series of δ-doped GaAs/AlAs multiple quantum well samples with well thicknesses of 20, 15 and 10 nm. Low temperature far-infrared absorption measurements clearly show three principal absorption lines due to transitions of Be-acceptor states from the ground state to the first three odd-parity excited states, respectively. Using a variational principle, the 2 p-1 s transition energies of quantum confined Be acceptors are calculated as a function of the well width. It is found that the theoretical calculation of the 2 pz → 1 s transitions is in good agreement with the D-like line experimental data.

KW - Far-infrared absorptions

KW - GaAs/AlAs multiple quantum wells

KW - Shallow acceptor impurities

KW - δ-doped

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U2 - 10.1007/s11433-006-2008-9

DO - 10.1007/s11433-006-2008-9

M3 - Article

AN - SCOPUS:33846536736

VL - 49

SP - 702

EP - 708

JO - Science in China, Series G: Physics Astronomy

JF - Science in China, Series G: Physics Astronomy

SN - 1674-7348

IS - 6

ER -

Far-infrared absorption studies of Be acceptors in δ-doped GaAs/AlAs multiple quantum wells

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