Femtosecond laser-induced damage morphologies of crystalline silicon by sub-threshold pulses

D. V. Tran, H. Y. Zheng, Y. C. Lam, V. M. Murukeshan, J. C. Chai, D. E. Hardt

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Abstract

The effect of sub-threshold pulses of circularly polarized Ti:sapphire femtosecond laser system on crystalline (1 0 0) silicon wafer was investigated. Surface damage morphologies were studied by irradiating the test silicon surface with pulses (peak fluence of 0.25 J/cm2) in succession. These pulses were below the single-pulse surface damage threshold. After the few initial pulses, the observed surface damage morphologies were found to be characterized by a minor phase change region and a major surface damage area at the center, corresponding to the well-known laser-induced periodic surface structure (LIPSS). Further increase in the number of pulses resulted in the formation of new surface morphologies with different features such as ablation, modification, and re-deposited materials. These features were reproducible and more distinguishable at higher number of pulses.

Original languageEnglish
Pages (from-to)977-986
Number of pages10
JournalOptics and Lasers in Engineering
Volume43
Issue number9
Early online date14 Jan 2005
DOIs
Publication statusPublished - Sep 2005
Externally publishedYes

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Tran, D. V., Zheng, H. Y., Lam, Y. C., Murukeshan, V. M., Chai, J. C., & Hardt, D. E. (2005). Femtosecond laser-induced damage morphologies of crystalline silicon by sub-threshold pulses. Optics and Lasers in Engineering, 43(9), 977-986. https://doi.org/10.1016/j.optlaseng.2004.10.006