Femtosecond laser-induced damage morphologies of crystalline silicon by sub-threshold pulses

D. V. Tran, H. Y. Zheng, Y. C. Lam, V. M. Murukeshan, J. C. Chai, D. E. Hardt

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

The effect of sub-threshold pulses of circularly polarized Ti:sapphire femtosecond laser system on crystalline (1 0 0) silicon wafer was investigated. Surface damage morphologies were studied by irradiating the test silicon surface with pulses (peak fluence of 0.25 J/cm2) in succession. These pulses were below the single-pulse surface damage threshold. After the few initial pulses, the observed surface damage morphologies were found to be characterized by a minor phase change region and a major surface damage area at the center, corresponding to the well-known laser-induced periodic surface structure (LIPSS). Further increase in the number of pulses resulted in the formation of new surface morphologies with different features such as ablation, modification, and re-deposited materials. These features were reproducible and more distinguishable at higher number of pulses.

Original languageEnglish
Pages (from-to)977-986
Number of pages10
JournalOptics and Lasers in Engineering
Volume43
Issue number9
Early online date14 Jan 2005
DOIs
Publication statusPublished - Sep 2005
Externally publishedYes

Fingerprint

Laser damage
Silicon
Ultrashort pulses
Crystalline materials
damage
thresholds
silicon
pulses
lasers
Aluminum Oxide
Ablation
Silicon wafers
Sapphire
Surface structure
Surface morphology
Laser pulses
yield point
ablation
fluence
sapphire

Cite this

Tran, D. V. ; Zheng, H. Y. ; Lam, Y. C. ; Murukeshan, V. M. ; Chai, J. C. ; Hardt, D. E. / Femtosecond laser-induced damage morphologies of crystalline silicon by sub-threshold pulses. In: Optics and Lasers in Engineering. 2005 ; Vol. 43, No. 9. pp. 977-986.
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abstract = "The effect of sub-threshold pulses of circularly polarized Ti:sapphire femtosecond laser system on crystalline (1 0 0) silicon wafer was investigated. Surface damage morphologies were studied by irradiating the test silicon surface with pulses (peak fluence of 0.25 J/cm2) in succession. These pulses were below the single-pulse surface damage threshold. After the few initial pulses, the observed surface damage morphologies were found to be characterized by a minor phase change region and a major surface damage area at the center, corresponding to the well-known laser-induced periodic surface structure (LIPSS). Further increase in the number of pulses resulted in the formation of new surface morphologies with different features such as ablation, modification, and re-deposited materials. These features were reproducible and more distinguishable at higher number of pulses.",
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Femtosecond laser-induced damage morphologies of crystalline silicon by sub-threshold pulses. / Tran, D. V.; Zheng, H. Y.; Lam, Y. C.; Murukeshan, V. M.; Chai, J. C.; Hardt, D. E.

In: Optics and Lasers in Engineering, Vol. 43, No. 9, 09.2005, p. 977-986.

Research output: Contribution to journalArticle

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T1 - Femtosecond laser-induced damage morphologies of crystalline silicon by sub-threshold pulses

AU - Tran, D. V.

AU - Zheng, H. Y.

AU - Lam, Y. C.

AU - Murukeshan, V. M.

AU - Chai, J. C.

AU - Hardt, D. E.

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AB - The effect of sub-threshold pulses of circularly polarized Ti:sapphire femtosecond laser system on crystalline (1 0 0) silicon wafer was investigated. Surface damage morphologies were studied by irradiating the test silicon surface with pulses (peak fluence of 0.25 J/cm2) in succession. These pulses were below the single-pulse surface damage threshold. After the few initial pulses, the observed surface damage morphologies were found to be characterized by a minor phase change region and a major surface damage area at the center, corresponding to the well-known laser-induced periodic surface structure (LIPSS). Further increase in the number of pulses resulted in the formation of new surface morphologies with different features such as ablation, modification, and re-deposited materials. These features were reproducible and more distinguishable at higher number of pulses.

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KW - Silicon

KW - Sub-threshold pulses

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