A first principles model of the dark current in quantum well infrared photodetectors has been derived using a quantum mechanical approach. This is based on a combined representation of the field-induced and thermionic emission components of the dark current. It is argued that the contribution of sequential tunnelling to the dark current is affected significantly by the presence of interface roughness found in real devices.
|Number of pages||4|
|Journal||Physica E: Low-Dimensional Systems and Nanostructures|
|Early online date||16 Jan 2002|
|Publication status||Published - 1 Mar 2002|