The structure evolution of annealed low-energy Si- or Ge-implanted thin and thick SiO2 layers is studied. The majority of Si (or Ge) species is restricted within a 3-4 nm thick layer. Si is able to separate and crystallize more easily than Ge. The glass transition temperature of the as-implanted structure has a significant effect on the progress of phase transformations accompanying annealing.
|Number of pages||4|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Early online date||31 May 2001|
|Publication status||Published - May 2001|
|Event||Materials Science with Ion Beams - Strasbourg, France|
Duration: 30 May 2000 → 2 Jun 2000