Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films

P. Normand, K. Beltsios, E. Kapetanakis, D. Tsoukalas, T. Travlos, J. Stoemenos, J. Van Den Berg, S. Zhang, C. Vieu, H. Launois, J. Gautier, F. Jourdan, L. Palun

Research output: Contribution to journalConference article

33 Citations (Scopus)

Abstract

The structure evolution of annealed low-energy Si- or Ge-implanted thin and thick SiO2 layers is studied. The majority of Si (or Ge) species is restricted within a 3-4 nm thick layer. Si is able to separate and crystallize more easily than Ge. The glass transition temperature of the as-implanted structure has a significant effect on the progress of phase transformations accompanying annealing.

Original languageEnglish
Pages (from-to)74-77
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume178
Issue number1-4
Early online date31 May 2001
DOIs
Publication statusPublished - May 2001
Externally publishedYes
EventMaterials Science with Ion Beams - Strasbourg, France
Duration: 30 May 20002 Jun 2000

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