Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films

P. Normand; K. Beltsios; E. Kapetanakis; D. Tsoukalas; T. Travlos; J. Stoemenos; J. Van Den Berg; S. Zhang; C. Vieu; H. Launois; J. Gautier; F. Jourdan; L. Palun

doi:10.1016/S0168-583X(01)00495-5

Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films

P. Normand, K. Beltsios, E. Kapetanakis, D. Tsoukalas, T. Travlos, J. Stoemenos, J. Van Den Berg, S. Zhang, C. Vieu, H. Launois, J. Gautier, F. Jourdan, L. Palun

Research output: Contribution to journal › Conference article › peer-review

34 Citations (Scopus)

Abstract

The structure evolution of annealed low-energy Si- or Ge-implanted thin and thick SiO₂ layers is studied. The majority of Si (or Ge) species is restricted within a 3-4 nm thick layer. Si is able to separate and crystallize more easily than Ge. The glass transition temperature of the as-implanted structure has a significant effect on the progress of phase transformations accompanying annealing.

Original language	English
Pages (from-to)	74-77
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	178
Issue number	1-4
Early online date	31 May 2001
DOIs	https://doi.org/10.1016/S0168-583X(01)00495-5
Publication status	Published - May 2001
Externally published	Yes
Event	Materials Science with Ion Beams - Strasbourg, France Duration: 30 May 2000 → 2 Jun 2000

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Normand, P., Beltsios, K., Kapetanakis, E., Tsoukalas, D., Travlos, T., Stoemenos, J., Van Den Berg, J., Zhang, S., Vieu, C., Launois, H., Gautier, J., Jourdan, F., & Palun, L. (2001). Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 178(1-4), 74-77. https://doi.org/10.1016/S0168-583X(01)00495-5

@article{80100b099d3f4ca186766fc8dd2fe62c,

title = "Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films",

abstract = "The structure evolution of annealed low-energy Si- or Ge-implanted thin and thick SiO2 layers is studied. The majority of Si (or Ge) species is restricted within a 3-4 nm thick layer. Si is able to separate and crystallize more easily than Ge. The glass transition temperature of the as-implanted structure has a significant effect on the progress of phase transformations accompanying annealing.",

keywords = "Ge, Glass transition, Implantation, Nanocrystals, Si, SiO2",

author = "P. Normand and K. Beltsios and E. Kapetanakis and D. Tsoukalas and T. Travlos and J. Stoemenos and {Van Den Berg}, J. and S. Zhang and C. Vieu and H. Launois and J. Gautier and F. Jourdan and L. Palun",

year = "2001",

month = may,

doi = "10.1016/S0168-583X(01)00495-5",

language = "English",

volume = "178",

pages = "74--77",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

number = "1-4",

note = "Materials Science with Ion Beams ; Conference date: 30-05-2000 Through 02-06-2000",

}

Normand, P, Beltsios, K, Kapetanakis, E, Tsoukalas, D, Travlos, T, Stoemenos, J, Van Den Berg, J, Zhang, S, Vieu, C, Launois, H, Gautier, J, Jourdan, F & Palun, L 2001, 'Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 178, no. 1-4, pp. 74-77. https://doi.org/10.1016/S0168-583X(01)00495-5

Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films. / Normand, P.; Beltsios, K.; Kapetanakis, E. et al.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 178, No. 1-4, 05.2001, p. 74-77.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films

AU - Normand, P.

AU - Beltsios, K.

AU - Kapetanakis, E.

AU - Tsoukalas, D.

AU - Travlos, T.

AU - Stoemenos, J.

AU - Van Den Berg, J.

AU - Zhang, S.

AU - Vieu, C.

AU - Launois, H.

AU - Gautier, J.

AU - Jourdan, F.

AU - Palun, L.

PY - 2001/5

Y1 - 2001/5

N2 - The structure evolution of annealed low-energy Si- or Ge-implanted thin and thick SiO2 layers is studied. The majority of Si (or Ge) species is restricted within a 3-4 nm thick layer. Si is able to separate and crystallize more easily than Ge. The glass transition temperature of the as-implanted structure has a significant effect on the progress of phase transformations accompanying annealing.

AB - The structure evolution of annealed low-energy Si- or Ge-implanted thin and thick SiO2 layers is studied. The majority of Si (or Ge) species is restricted within a 3-4 nm thick layer. Si is able to separate and crystallize more easily than Ge. The glass transition temperature of the as-implanted structure has a significant effect on the progress of phase transformations accompanying annealing.

KW - Ge

KW - Glass transition

KW - Implantation

KW - Nanocrystals

KW - Si

KW - SiO2

UR - http://www.scopus.com/inward/record.url?scp=0035334859&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(01)00495-5

DO - 10.1016/S0168-583X(01)00495-5

M3 - Conference article

AN - SCOPUS:0035334859

VL - 178

SP - 74

EP - 77

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-4

T2 - Materials Science with Ion Beams

Y2 - 30 May 2000 through 2 June 2000

ER -

Normand P, Beltsios K, Kapetanakis E, Tsoukalas D, Travlos T, Stoemenos J et al. Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2001 May;178(1-4):74-77. Epub 2001 May 31. doi: 10.1016/S0168-583X(01)00495-5

Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films

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