Abstract
Two-dimensional (2-D) arrays of silicon nanocrystals were fabricated in thermally grown SiO2 films by 1 keV 28Si+ ion implantation and subsequent thermal annealing. The nanocrystals characteristics (size, shape, and spatial distribution) as a function of the implanted dose and annealing conditions were investigated by transmission electron microscopy. The nanocrystals were located at a tunneling distance from the oxide surface. With increasing size, the nanocrystals changed from quasi-spheres to faceted platelets. With a reduction in the implantation dose and the annealing temperature, the size of the nanocrystals decreased, their size distribution became more narrow, while their spatial arrangement remained 2-D.
Original language | English |
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Pages (from-to) | 88-90 |
Number of pages | 3 |
Journal | Electrochemical and Solid-State Letters |
Volume | 1 |
Issue number | 2 |
Early online date | 11 Jun 1998 |
DOIs | |
Publication status | Published - Aug 1998 |
Externally published | Yes |