Formation of 2-D arrays of silicon nanocrystals in thin siO2 films by very-low energy Si+ ion implantation

P. Normand, D. Tsoukalas, E. Kapetanakis, J. A. Van Den Berg, D. G. Armour, J. Stoemenos, C. Vieu

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31 Citations (Scopus)


Two-dimensional (2-D) arrays of silicon nanocrystals were fabricated in thermally grown SiO2 films by 1 keV 28Si+ ion implantation and subsequent thermal annealing. The nanocrystals characteristics (size, shape, and spatial distribution) as a function of the implanted dose and annealing conditions were investigated by transmission electron microscopy. The nanocrystals were located at a tunneling distance from the oxide surface. With increasing size, the nanocrystals changed from quasi-spheres to faceted platelets. With a reduction in the implantation dose and the annealing temperature, the size of the nanocrystals decreased, their size distribution became more narrow, while their spatial arrangement remained 2-D.

Original languageEnglish
Pages (from-to)88-90
Number of pages3
JournalElectrochemical and Solid-State Letters
Issue number2
Early online date11 Jun 1998
Publication statusPublished - Aug 1998
Externally publishedYes


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