Formation of 2-D arrays of silicon nanocrystals in thin siO2 films by very-low energy Si+ ion implantation

P. Normand; D. Tsoukalas; E. Kapetanakis; J. A. Van Den Berg; D. G. Armour; J. Stoemenos; C. Vieu

doi:10.1149/1.1390646

Formation of 2-D arrays of silicon nanocrystals in thin siO₂ films by very-low energy Si⁺ ion implantation

P. Normand, D. Tsoukalas, E. Kapetanakis, J. A. Van Den Berg, D. G. Armour, J. Stoemenos, C. Vieu

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

Two-dimensional (2-D) arrays of silicon nanocrystals were fabricated in thermally grown SiO₂ films by 1 keV ²⁸Si⁺ ion implantation and subsequent thermal annealing. The nanocrystals characteristics (size, shape, and spatial distribution) as a function of the implanted dose and annealing conditions were investigated by transmission electron microscopy. The nanocrystals were located at a tunneling distance from the oxide surface. With increasing size, the nanocrystals changed from quasi-spheres to faceted platelets. With a reduction in the implantation dose and the annealing temperature, the size of the nanocrystals decreased, their size distribution became more narrow, while their spatial arrangement remained 2-D.

Original language	English
Pages (from-to)	88-90
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	1
Issue number	2
Early online date	11 Jun 1998
DOIs	https://doi.org/10.1149/1.1390646
Publication status	Published - Aug 1998
Externally published	Yes

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title = "Formation of 2-D arrays of silicon nanocrystals in thin siO2 films by very-low energy Si+ ion implantation",

abstract = "Two-dimensional (2-D) arrays of silicon nanocrystals were fabricated in thermally grown SiO2 films by 1 keV 28Si+ ion implantation and subsequent thermal annealing. The nanocrystals characteristics (size, shape, and spatial distribution) as a function of the implanted dose and annealing conditions were investigated by transmission electron microscopy. The nanocrystals were located at a tunneling distance from the oxide surface. With increasing size, the nanocrystals changed from quasi-spheres to faceted platelets. With a reduction in the implantation dose and the annealing temperature, the size of the nanocrystals decreased, their size distribution became more narrow, while their spatial arrangement remained 2-D.",

author = "P. Normand and D. Tsoukalas and E. Kapetanakis and {Van Den Berg}, {J. A.} and Armour, {D. G.} and J. Stoemenos and C. Vieu",

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AU - Normand, P.

AU - Tsoukalas, D.

AU - Kapetanakis, E.

AU - Van Den Berg, J. A.

AU - Armour, D. G.

AU - Stoemenos, J.

AU - Vieu, C.

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AB - Two-dimensional (2-D) arrays of silicon nanocrystals were fabricated in thermally grown SiO2 films by 1 keV 28Si+ ion implantation and subsequent thermal annealing. The nanocrystals characteristics (size, shape, and spatial distribution) as a function of the implanted dose and annealing conditions were investigated by transmission electron microscopy. The nanocrystals were located at a tunneling distance from the oxide surface. With increasing size, the nanocrystals changed from quasi-spheres to faceted platelets. With a reduction in the implantation dose and the annealing temperature, the size of the nanocrystals decreased, their size distribution became more narrow, while their spatial arrangement remained 2-D.

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Formation of 2-D arrays of silicon nanocrystals in thin siO₂ films by very-low energy Si⁺ ion implantation

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