Formation of low energy tails in silicon δ-doped GaAs/AlAs multiple quantum wells

Aurimas Čerškus; Jurgis Kundrotas; Gintaras Valušis; Paul Harrison; Suraj Khanna; Edmund Linfield

doi:10.1117/12.726489

Formation of low energy tails in silicon δ-doped GaAs/AlAs multiple quantum wells

Aurimas Čerškus, Jurgis Kundrotas, Gintaras Valušis, Paul Harrison, Suraj Khanna, Edmund Linfield

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Citations (Scopus)

Abstract

In this article we present results of an investigation the PL properties of highly Si &dgr;-doped GaAs/AlAs multiple QWs at liquid nitrogen and room temperatures. We discuss possible mechanisms for carrier recombination in the QW structures placing particular emphasis on the origin of the low energy tail in the PL spectra, and its features

Original language	English
Title of host publication	Advanced Optical Materials, Technologies, and Devices
Editors	Steponas Ašmontas, Jonas Gradauskas
Publisher	SPIE
Number of pages	6
Volume	6596
ISBN (Print)	0819467324, 9780819467324
DOIs	https://doi.org/10.1117/12.726489
Publication status	Published - 25 Jan 2007
Externally published	Yes
Event	Advanced Optical Materials, Technologies, and Devices - Vilnius, Lithuania Duration: 27 Aug 2006 → 30 Aug 2006

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	SPIE
Volume	6596
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Advanced Optical Materials, Technologies, and Devices
Country/Territory	Lithuania
City	Vilnius
Period	27/08/06 → 30/08/06

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Cite this

Čerškus, A., Kundrotas, J., Valušis, G., Harrison, P., Khanna, S., & Linfield, E. (2007). Formation of low energy tails in silicon δ-doped GaAs/AlAs multiple quantum wells. In S. Ašmontas, & J. Gradauskas (Eds.), Advanced Optical Materials, Technologies, and Devices (Vol. 6596). [659613] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6596). SPIE. https://doi.org/10.1117/12.726489

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title = "Formation of low energy tails in silicon δ-doped GaAs/AlAs multiple quantum wells",

abstract = "In this article we present results of an investigation the PL properties of highly Si &dgr;-doped GaAs/AlAs multiple QWs at liquid nitrogen and room temperatures. We discuss possible mechanisms for carrier recombination in the QW structures placing particular emphasis on the origin of the low energy tail in the PL spectra, and its features",

keywords = "Semiconductor Quantum Wells, Landau levels, Photoluminescence",

author = "Aurimas {\v C}er{\v s}kus and Jurgis Kundrotas and Gintaras Valu{\v s}is and Paul Harrison and Suraj Khanna and Edmund Linfield",

year = "2007",

month = jan,

day = "25",

doi = "10.1117/12.726489",

language = "English",

isbn = "0819467324",

volume = "6596",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "A{\v s}montas, {Steponas } and Gradauskas, {Jonas }",

booktitle = "Advanced Optical Materials, Technologies, and Devices",

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note = "Advanced Optical Materials, Technologies, and Devices ; Conference date: 27-08-2006 Through 30-08-2006",

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Čerškus, A, Kundrotas, J, Valušis, G, Harrison, P, Khanna, S & Linfield, E 2007, Formation of low energy tails in silicon δ-doped GaAs/AlAs multiple quantum wells. in S Ašmontas & J Gradauskas (eds), Advanced Optical Materials, Technologies, and Devices. vol. 6596, 659613, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6596, SPIE, Advanced Optical Materials, Technologies, and Devices, Vilnius, Lithuania, 27/08/06. https://doi.org/10.1117/12.726489

Formation of low energy tails in silicon δ-doped GaAs/AlAs multiple quantum wells. / Čerškus, Aurimas; Kundrotas, Jurgis; Valušis, Gintaras et al.

Advanced Optical Materials, Technologies, and Devices. ed. / Steponas Ašmontas; Jonas Gradauskas. Vol. 6596 SPIE, 2007. 659613 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6596).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Formation of low energy tails in silicon δ-doped GaAs/AlAs multiple quantum wells

AU - Čerškus, Aurimas

AU - Kundrotas, Jurgis

AU - Valušis, Gintaras

AU - Harrison, Paul

AU - Khanna, Suraj

AU - Linfield, Edmund

PY - 2007/1/25

Y1 - 2007/1/25

N2 - In this article we present results of an investigation the PL properties of highly Si &dgr;-doped GaAs/AlAs multiple QWs at liquid nitrogen and room temperatures. We discuss possible mechanisms for carrier recombination in the QW structures placing particular emphasis on the origin of the low energy tail in the PL spectra, and its features

AB - In this article we present results of an investigation the PL properties of highly Si &dgr;-doped GaAs/AlAs multiple QWs at liquid nitrogen and room temperatures. We discuss possible mechanisms for carrier recombination in the QW structures placing particular emphasis on the origin of the low energy tail in the PL spectra, and its features

KW - Semiconductor Quantum Wells

KW - Landau levels

KW - Photoluminescence

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U2 - 10.1117/12.726489

DO - 10.1117/12.726489

M3 - Conference contribution

AN - SCOPUS:34249018213

SN - 0819467324

SN - 9780819467324

VL - 6596

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Advanced Optical Materials, Technologies, and Devices

A2 - Ašmontas, Steponas

A2 - Gradauskas, Jonas

PB - SPIE

T2 - Advanced Optical Materials, Technologies, and Devices

Y2 - 27 August 2006 through 30 August 2006

ER -

Čerškus A, Kundrotas J, Valušis G, Harrison P, Khanna S, Linfield E. Formation of low energy tails in silicon δ-doped GaAs/AlAs multiple quantum wells. In Ašmontas S, Gradauskas J, editors, Advanced Optical Materials, Technologies, and Devices. Vol. 6596. SPIE. 2007. 659613. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.726489

Formation of low energy tails in silicon δ-doped GaAs/AlAs multiple quantum wells

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