Formation of low energy tails in silicon δ-doped GaAs/AlAs multiple quantum wells

Aurimas Čerškus, Jurgis Kundrotas, Gintaras Valušis, Paul Harrison, Suraj Khanna, Edmund Linfield

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Citations (Scopus)

Abstract

In this article we present results of an investigation the PL properties of highly Si &dgr;-doped GaAs/AlAs multiple QWs at liquid nitrogen and room temperatures. We discuss possible mechanisms for carrier recombination in the QW structures placing particular emphasis on the origin of the low energy tail in the PL spectra, and its features
Original languageEnglish
Title of host publicationAdvanced Optical Materials, Technologies, and Devices
EditorsSteponas Ašmontas, Jonas Gradauskas
PublisherSPIE
Number of pages6
Volume6596
ISBN (Print)0819467324, 9780819467324
DOIs
Publication statusPublished - 25 Jan 2007
Externally publishedYes
EventAdvanced Optical Materials, Technologies, and Devices - Vilnius, Lithuania
Duration: 27 Aug 200630 Aug 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
PublisherSPIE
Volume6596
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceAdvanced Optical Materials, Technologies, and Devices
Country/TerritoryLithuania
CityVilnius
Period27/08/0630/08/06

Fingerprint

Dive into the research topics of 'Formation of low energy tails in silicon δ-doped GaAs/AlAs multiple quantum wells'. Together they form a unique fingerprint.

Cite this