Formation of neon induced cavities in silicon by plasma based ion implantation

S. Peripolli; L. Amaral; E. Oliviero; M. L. David; M. F. Beaufort; J. F. Barbot; L. Pichon; M. Drouet; P. F.P. Fichtner; S. E. Donnelly

doi:10.1016/j.nimb.2006.03.112

Formation of neon induced cavities in silicon by plasma based ion implantation

S. Peripolli, L. Amaral, E. Oliviero, M. L. David, M. F. Beaufort, J. F. Barbot, L. Pichon, M. Drouet, P. F.P. Fichtner, S. E. Donnelly

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2 Citations (Scopus)

Abstract

Nanocavities and interstitial-type defects formed by neon plasma based ion implantation (PBII) in Si followed by annealing at 900 °C have been studied in comparison with conventional ion implantation. Implantations were performed at 250 °C and high fluence of ≈5 × 10¹⁶ cm^-2. Using PBII, a rather uniform layer of cavities is observed from the surface. However, the mean diameter of cavities is smaller due to the interaction with the interstitial-type defects. In contrast with conventional implantation, these latter are created all over the cavity band because of the ion energy distribution that is characteristic of plasma based ion implantation.

Original language	English
Pages (from-to)	193-195
Number of pages	3
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	249
Issue number	1-2
Early online date	23 May 2006
DOIs	https://doi.org/10.1016/j.nimb.2006.03.112
Publication status	Published - 1 Aug 2006
Externally published	Yes

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Peripolli, S., Amaral, L., Oliviero, E., David, M. L., Beaufort, M. F., Barbot, J. F., Pichon, L., Drouet, M., Fichtner, P. F. P., & Donnelly, S. E. (2006). Formation of neon induced cavities in silicon by plasma based ion implantation. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 249(1-2 ), 193-195. https://doi.org/10.1016/j.nimb.2006.03.112

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title = "Formation of neon induced cavities in silicon by plasma based ion implantation",

abstract = "Nanocavities and interstitial-type defects formed by neon plasma based ion implantation (PBII) in Si followed by annealing at 900 °C have been studied in comparison with conventional ion implantation. Implantations were performed at 250 °C and high fluence of ≈5 × 1016 cm-2. Using PBII, a rather uniform layer of cavities is observed from the surface. However, the mean diameter of cavities is smaller due to the interaction with the interstitial-type defects. In contrast with conventional implantation, these latter are created all over the cavity band because of the ion energy distribution that is characteristic of plasma based ion implantation.",

keywords = "Cavities, Defects, Neon, Plasma based ion implantation, Silicon",

author = "S. Peripolli and L. Amaral and E. Oliviero and David, {M. L.} and Beaufort, {M. F.} and Barbot, {J. F.} and L. Pichon and M. Drouet and Fichtner, {P. F.P.} and Donnelly, {S. E.}",

year = "2006",

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doi = "10.1016/j.nimb.2006.03.112",

language = "English",

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journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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Peripolli, S, Amaral, L, Oliviero, E, David, ML, Beaufort, MF, Barbot, JF, Pichon, L, Drouet, M, Fichtner, PFP & Donnelly, SE 2006, 'Formation of neon induced cavities in silicon by plasma based ion implantation', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 249, no. 1-2 , pp. 193-195. https://doi.org/10.1016/j.nimb.2006.03.112

TY - JOUR

T1 - Formation of neon induced cavities in silicon by plasma based ion implantation

AU - Peripolli, S.

AU - Amaral, L.

AU - Oliviero, E.

AU - David, M. L.

AU - Beaufort, M. F.

AU - Barbot, J. F.

AU - Pichon, L.

AU - Drouet, M.

AU - Fichtner, P. F.P.

AU - Donnelly, S. E.

PY - 2006/8/1

Y1 - 2006/8/1

N2 - Nanocavities and interstitial-type defects formed by neon plasma based ion implantation (PBII) in Si followed by annealing at 900 °C have been studied in comparison with conventional ion implantation. Implantations were performed at 250 °C and high fluence of ≈5 × 1016 cm-2. Using PBII, a rather uniform layer of cavities is observed from the surface. However, the mean diameter of cavities is smaller due to the interaction with the interstitial-type defects. In contrast with conventional implantation, these latter are created all over the cavity band because of the ion energy distribution that is characteristic of plasma based ion implantation.

AB - Nanocavities and interstitial-type defects formed by neon plasma based ion implantation (PBII) in Si followed by annealing at 900 °C have been studied in comparison with conventional ion implantation. Implantations were performed at 250 °C and high fluence of ≈5 × 1016 cm-2. Using PBII, a rather uniform layer of cavities is observed from the surface. However, the mean diameter of cavities is smaller due to the interaction with the interstitial-type defects. In contrast with conventional implantation, these latter are created all over the cavity band because of the ion energy distribution that is characteristic of plasma based ion implantation.

KW - Cavities

KW - Defects

KW - Neon

KW - Plasma based ion implantation

KW - Silicon

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U2 - 10.1016/j.nimb.2006.03.112

DO - 10.1016/j.nimb.2006.03.112

M3 - Article

AN - SCOPUS:33745854276

VL - 249

SP - 193

EP - 195

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-2

ER -

Formation of neon induced cavities in silicon by plasma based ion implantation

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