Formation of neon induced cavities in silicon by plasma based ion implantation

S. Peripolli, L. Amaral, E. Oliviero, M. L. David, M. F. Beaufort, J. F. Barbot, L. Pichon, M. Drouet, P. F.P. Fichtner, S. E. Donnelly

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Nanocavities and interstitial-type defects formed by neon plasma based ion implantation (PBII) in Si followed by annealing at 900 °C have been studied in comparison with conventional ion implantation. Implantations were performed at 250 °C and high fluence of ≈5 × 1016 cm-2. Using PBII, a rather uniform layer of cavities is observed from the surface. However, the mean diameter of cavities is smaller due to the interaction with the interstitial-type defects. In contrast with conventional implantation, these latter are created all over the cavity band because of the ion energy distribution that is characteristic of plasma based ion implantation.

LanguageEnglish
Pages193-195
Number of pages3
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume249
Issue number1-2
Early online date23 May 2006
DOIs
Publication statusPublished - 1 Aug 2006
Externally publishedYes

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Neon
Ion implantation
neon
ion implantation
Plasmas
Silicon
cavities
silicon
implantation
interstitials
defects
Defects
energy distribution
fluence
annealing
Annealing
Ions
ions
interactions

Cite this

Peripolli, S. ; Amaral, L. ; Oliviero, E. ; David, M. L. ; Beaufort, M. F. ; Barbot, J. F. ; Pichon, L. ; Drouet, M. ; Fichtner, P. F.P. ; Donnelly, S. E. / Formation of neon induced cavities in silicon by plasma based ion implantation. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2006 ; Vol. 249, No. 1-2 . pp. 193-195.
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abstract = "Nanocavities and interstitial-type defects formed by neon plasma based ion implantation (PBII) in Si followed by annealing at 900 °C have been studied in comparison with conventional ion implantation. Implantations were performed at 250 °C and high fluence of ≈5 × 1016 cm-2. Using PBII, a rather uniform layer of cavities is observed from the surface. However, the mean diameter of cavities is smaller due to the interaction with the interstitial-type defects. In contrast with conventional implantation, these latter are created all over the cavity band because of the ion energy distribution that is characteristic of plasma based ion implantation.",
keywords = "Cavities, Defects, Neon, Plasma based ion implantation, Silicon",
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Formation of neon induced cavities in silicon by plasma based ion implantation. / Peripolli, S.; Amaral, L.; Oliviero, E.; David, M. L.; Beaufort, M. F.; Barbot, J. F.; Pichon, L.; Drouet, M.; Fichtner, P. F.P.; Donnelly, S. E.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 249, No. 1-2 , 01.08.2006, p. 193-195.

Research output: Contribution to journalArticle

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T1 - Formation of neon induced cavities in silicon by plasma based ion implantation

AU - Peripolli, S.

AU - Amaral, L.

AU - Oliviero, E.

AU - David, M. L.

AU - Beaufort, M. F.

AU - Barbot, J. F.

AU - Pichon, L.

AU - Drouet, M.

AU - Fichtner, P. F.P.

AU - Donnelly, S. E.

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AB - Nanocavities and interstitial-type defects formed by neon plasma based ion implantation (PBII) in Si followed by annealing at 900 °C have been studied in comparison with conventional ion implantation. Implantations were performed at 250 °C and high fluence of ≈5 × 1016 cm-2. Using PBII, a rather uniform layer of cavities is observed from the surface. However, the mean diameter of cavities is smaller due to the interaction with the interstitial-type defects. In contrast with conventional implantation, these latter are created all over the cavity band because of the ion energy distribution that is characteristic of plasma based ion implantation.

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KW - Defects

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