Nanocavities and interstitial-type defects formed by neon plasma based ion implantation (PBII) in Si followed by annealing at 900 °C have been studied in comparison with conventional ion implantation. Implantations were performed at 250 °C and high fluence of ≈5 × 1016 cm-2. Using PBII, a rather uniform layer of cavities is observed from the surface. However, the mean diameter of cavities is smaller due to the interaction with the interstitial-type defects. In contrast with conventional implantation, these latter are created all over the cavity band because of the ion energy distribution that is characteristic of plasma based ion implantation.
|Number of pages||3|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Early online date||23 May 2006|
|Publication status||Published - 1 Aug 2006|