GaAs/AlAs quantum wells for selective terahertz sensing: Study by differential surface photovoltage spectroscopy

Julius Kavaliauskas, Bronislovas Čechavičius, Gene Krivaite, Dalius Seliuta, Gintaras Valušis, Ben Sherliker, Matthew Halsall, Paul Harrison, Suraj Khanna, Edmund Linfield

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have studied interband optical transitions, electronic structure and structural quality of p-type (Be) and n-type (Si) δ-doped GaAs/AlAs MQWs designed for selective THz sensing applying differential surface photovoltage (DSPV) spectroscopy. Sharp derivative-like features associated with excitonic optical transitions in GaAs/AlAs MQWs have been observed in the spectra at 300 K and 90 K temperature. The energies and line broadening parameters for a large number of QW related excitonic transitions were determined from the line-shape analysis of the DSPV spectra. The spectroscopic data of transition energies were found to be in a good agreement with calculations within the envelope function approximation which took into account the nonparabolicity of energy bands. Analysis of the dependence of the exciton linewidth broadening on the quantum subband number allowed evaluate line-broadening mechanisms and interface roughness in the MQW structures. It was determined that doping with Si broadens more effectively the optical spectra lines in comparison with the structures of the same design doped with Be.

Original languageEnglish
Title of host publicationAdvanced Optical Materials, Technologies, and Devices
EditorsSteponas Ašmontas, Jonas Gradauskas
PublisherSPIE
Number of pages7
Volume6596
ISBN (Print)0819467324, 9780819467324
DOIs
Publication statusPublished - 25 Jan 2007
Externally publishedYes
EventAdvanced Optical Materials, Technologies, and Devices - Vilnius, Lithuania
Duration: 27 Aug 200630 Aug 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
PublisherSPIE
Volume6596
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceAdvanced Optical Materials, Technologies, and Devices
Country/TerritoryLithuania
CityVilnius
Period27/08/0630/08/06

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