Abstract
In this paper we show that the idea of a mid-infrared quantum-cascade laser with gain regions based on a double-phonon resonance can be implemented in the GaAs/AlGaAs system. In contrast to the usual GaAs/AlGaAs laser active region design, which involves a triple quantum well active region, here we identify an optimal heterostructure design by using a simulated annealing algorithm which is programmed to maximize the laser gain for a given wavelength and for subband spacings prescribed to satisfy the double-phonon resonance condition. The output characteristics are calculated using a full self-consistent rate equation model of the intersubband electron transport. Initial devices grown according to this design show laser action up to 240K in pulsed mode with good agreement between the calculated and measured characteristics.
Original language | English |
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Title of host publication | Physics of Semiconductors |
Subtitle of host publication | 27th International Conference on the Physics of Semiconductors, ICPS-27 |
Editors | José Menéndez, Chris G. Van de Walle |
Publisher | American Institute of Physics Inc. |
Pages | 1565-1566 |
Number of pages | 2 |
ISBN (Print) | 0735402574, 9780735402577 |
DOIs | |
Publication status | Published - 30 Jun 2005 |
Externally published | Yes |
Event | 27th International Conference on the Physics of Semiconductors - Flagstaff, United States Duration: 26 Jul 2004 → 30 Jul 2004 Conference number: 27 |
Publication series
Name | AIP Conference Proceedings |
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Volume | 772 |
ISSN (Print) | 0094-243X |
ISSN (Electronic) | 1551-7616 |
Conference
Conference | 27th International Conference on the Physics of Semiconductors |
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Abbreviated title | ICPS-27 |
Country/Territory | United States |
City | Flagstaff |
Period | 26/07/04 → 30/07/04 |