GaAs/Al0.45Ga0.55As double phonon resonance quantum cascade laser

D. Indjin, A. Mirčetić, P. Harrison, R. W. Kelsall, Z. Ikonić, V. D. Jovanović, V. Milanović, M. Giehler, R. Hey, H. T. Grahn

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Citations (Scopus)


In this paper we show that the idea of a mid-infrared quantum-cascade laser with gain regions based on a double-phonon resonance can be implemented in the GaAs/AlGaAs system. In contrast to the usual GaAs/AlGaAs laser active region design, which involves a triple quantum well active region, here we identify an optimal heterostructure design by using a simulated annealing algorithm which is programmed to maximize the laser gain for a given wavelength and for subband spacings prescribed to satisfy the double-phonon resonance condition. The output characteristics are calculated using a full self-consistent rate equation model of the intersubband electron transport. Initial devices grown according to this design show laser action up to 240K in pulsed mode with good agreement between the calculated and measured characteristics.

Original languageEnglish
Title of host publicationPhysics of Semiconductors
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Editors José Menéndez, Chris G. Van de Walle
PublisherAmerican Institute of Physics Inc.
Number of pages2
ISBN (Print)0735402574, 9780735402577
Publication statusPublished - 30 Jun 2005
Externally publishedYes
Event27th International Conference on the Physics of Semiconductors - Flagstaff, United States
Duration: 26 Jul 200430 Jul 2004
Conference number: 27

Publication series

NameAIP Conference Proceedings
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616


Conference27th International Conference on the Physics of Semiconductors
Abbreviated titleICPS-27
Country/TerritoryUnited States


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