We investigate the addition spectra of arrays of quantum dots (QDs) under different geometrical distributions. We use a Hubbard Hamiltonian where we include intra- and inter-dot interactions. Exact diagonalisation is used to calculate the eigenstates of arrays containing several QDs and the conductance addition spectrum is calculated using the Beenakker Approach for a single-dot generalised to an array of QDs. The charging/discharging process of the QDs is theoretically studied when a bias is applied to a metallic gate on top of the structure. The occupancy and conductance as a function of the gate bias is obtained, a crucial feature to understanding the memory charging process for non-volatile memories that are based on MOS devices with embedded semiconductor QDs.
|Number of pages||4|
|Journal||Superlattices and Microstructures|
|Publication status||Published - 1 Sep 2003|
|Event||Joint 6th International Conference on New Phenomena in Mesoscopic Structures and 4th International Conference on Surfaces and Interfaces of Mesoscopic Devices - MauI, United States|
Duration: 1 Dec 2003 → 5 Dec 2003