Geometrical effects on the charge/discharge properties of quantum dot flash memories

M. Prada, P. Harrison

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


We investigate the addition spectra of arrays of quantum dots (QDs) under different geometrical distributions. We use a Hubbard Hamiltonian where we include intra- and inter-dot interactions. Exact diagonalisation is used to calculate the eigenstates of arrays containing several QDs and the conductance addition spectrum is calculated using the Beenakker Approach for a single-dot generalised to an array of QDs. The charging/discharging process of the QDs is theoretically studied when a bias is applied to a metallic gate on top of the structure. The occupancy and conductance as a function of the gate bias is obtained, a crucial feature to understanding the memory charging process for non-volatile memories that are based on MOS devices with embedded semiconductor QDs.

Original languageEnglish
Pages (from-to)241-244
Number of pages4
JournalSuperlattices and Microstructures
Issue number3-6
Publication statusPublished - 1 Sep 2003
Externally publishedYes
EventJoint 6th International Conference on New Phenomena in Mesoscopic Structures and 4th International Conference on Surfaces and Interfaces of Mesoscopic Devices - MauI, United States
Duration: 1 Dec 20035 Dec 2003


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