Geometrical effects on the charge/discharge properties of quantum dot flash memories

M. Prada; P. Harrison

doi:10.1016/j.spmi.2004.03.014

Geometrical effects on the charge/discharge properties of quantum dot flash memories

M. Prada, P. Harrison

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We investigate the addition spectra of arrays of quantum dots (QDs) under different geometrical distributions. We use a Hubbard Hamiltonian where we include intra- and inter-dot interactions. Exact diagonalisation is used to calculate the eigenstates of arrays containing several QDs and the conductance addition spectrum is calculated using the Beenakker Approach for a single-dot generalised to an array of QDs. The charging/discharging process of the QDs is theoretically studied when a bias is applied to a metallic gate on top of the structure. The occupancy and conductance as a function of the gate bias is obtained, a crucial feature to understanding the memory charging process for non-volatile memories that are based on MOS devices with embedded semiconductor QDs.

Original language	English
Pages (from-to)	241-244
Number of pages	4
Journal	Superlattices and Microstructures
Volume	34
Issue number	3-6
DOIs	https://doi.org/10.1016/j.spmi.2004.03.014
Publication status	Published - 1 Sep 2003
Externally published	Yes
Event	Joint 6th International Conference on New Phenomena in Mesoscopic Structures and 4th International Conference on Surfaces and Interfaces of Mesoscopic Devices - MauI, United States Duration: 1 Dec 2003 → 5 Dec 2003

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title = "Geometrical effects on the charge/discharge properties of quantum dot flash memories",

abstract = "We investigate the addition spectra of arrays of quantum dots (QDs) under different geometrical distributions. We use a Hubbard Hamiltonian where we include intra- and inter-dot interactions. Exact diagonalisation is used to calculate the eigenstates of arrays containing several QDs and the conductance addition spectrum is calculated using the Beenakker Approach for a single-dot generalised to an array of QDs. The charging/discharging process of the QDs is theoretically studied when a bias is applied to a metallic gate on top of the structure. The occupancy and conductance as a function of the gate bias is obtained, a crucial feature to understanding the memory charging process for non-volatile memories that are based on MOS devices with embedded semiconductor QDs.",

keywords = "QDs, Semiconductor",

author = "M. Prada and P. Harrison",

year = "2003",

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doi = "10.1016/j.spmi.2004.03.014",

language = "English",

volume = "34",

pages = "241--244",

journal = "Micro and Nanostructures",

issn = "2773-0131",

publisher = "Elsevier Ltd",

number = "3-6",

note = "Joint 6th International Conference on New Phenomena in Mesoscopic Structures and 4th International Conference on Surfaces and Interfaces of Mesoscopic Devices, NPMS-6/SIMD-4 ; Conference date: 01-12-2003 Through 05-12-2003",

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TY - JOUR

T1 - Geometrical effects on the charge/discharge properties of quantum dot flash memories

AU - Prada, M.

AU - Harrison, P.

PY - 2003/9/1

Y1 - 2003/9/1

N2 - We investigate the addition spectra of arrays of quantum dots (QDs) under different geometrical distributions. We use a Hubbard Hamiltonian where we include intra- and inter-dot interactions. Exact diagonalisation is used to calculate the eigenstates of arrays containing several QDs and the conductance addition spectrum is calculated using the Beenakker Approach for a single-dot generalised to an array of QDs. The charging/discharging process of the QDs is theoretically studied when a bias is applied to a metallic gate on top of the structure. The occupancy and conductance as a function of the gate bias is obtained, a crucial feature to understanding the memory charging process for non-volatile memories that are based on MOS devices with embedded semiconductor QDs.

AB - We investigate the addition spectra of arrays of quantum dots (QDs) under different geometrical distributions. We use a Hubbard Hamiltonian where we include intra- and inter-dot interactions. Exact diagonalisation is used to calculate the eigenstates of arrays containing several QDs and the conductance addition spectrum is calculated using the Beenakker Approach for a single-dot generalised to an array of QDs. The charging/discharging process of the QDs is theoretically studied when a bias is applied to a metallic gate on top of the structure. The occupancy and conductance as a function of the gate bias is obtained, a crucial feature to understanding the memory charging process for non-volatile memories that are based on MOS devices with embedded semiconductor QDs.

KW - QDs

KW - Semiconductor

UR - http://www.scopus.com/inward/record.url?scp=3242671479&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2004.03.014

DO - 10.1016/j.spmi.2004.03.014

M3 - Conference article

AN - SCOPUS:3242671479

VL - 34

SP - 241

EP - 244

JO - Micro and Nanostructures

JF - Micro and Nanostructures

SN - 2773-0131

IS - 3-6

T2 - Joint 6th International Conference on New Phenomena in Mesoscopic Structures and 4th International Conference on Surfaces and Interfaces of Mesoscopic Devices

Y2 - 1 December 2003 through 5 December 2003

ER -

Geometrical effects on the charge/discharge properties of quantum dot flash memories

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