We performed a thorough investigation of mid-infrared heavy-to-light hole intersubband absorption in the valence band of p-doped GaAs quantum wells with AlAs barriers. For the p-type doping a high-purity solid carbon source was used. The experimental results are compared with theoretical simulations. The inclusion of layer inter-diffusion well reproduces the transition energies. We estimate a 6-10 Å inter-diffusion length that is consistent with electron microscopy measurements. A careful analysis of our results provides valuable information for further design of emitters and detectors based on hole intersubband transitions in the valence band.
|Number of pages||6|
|Journal||MRS Online Proceedings Library|
|Publication status||Published - 1 Dec 2012|
|Event||2012 MRS Fall Meeting - Boston, United States|
Duration: 25 Nov 2012 → 30 Nov 2012