High depth resolution characterization of the damage and annealing behaviour of ultra shallow As implants in Si

J. A. Van Den Berg; D. G. Armour; M. Werner; S. Whelan; W. Vandervorst; T. Clarysse; E. H.J. Collart; R. D. Goldberg; P. Bailey; T. C.Q. Noakes

doi:10.1109/IIT.2002.1258076

High depth resolution characterization of the damage and annealing behaviour of ultra shallow As implants in Si

J. A. Van Den Berg, D. G. Armour, M. Werner, S. Whelan, W. Vandervorst, T. Clarysse, E. H.J. Collart, R. D. Goldberg, P. Bailey, T. C.Q. Noakes

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

The relationship between damage formation/annealing and As profile redistribution has been studied using low energy As implants into Si at 2.5 keV at doses between 3 × 10¹³ cm^-2 and 2 × 10¹⁵ cm^-2 at room temperature. Samples were annealed at temperatures between 600 and 1050°C. High depth resolution medium energy ion scattering (MEIS) and secondary ion mass spectrometry (SIMS) were used to characterise the damage build up and As profiles as a function of implant dose and anneal temperature. MEIS studies showed that damage does not accumulate according to the energy deposition function but proceeds from the surface inwards. This is ascribed to the accumulation of collision cascade produced interstitials that are attracted to and settle at initially the oxide/Si interface and later to the advancing amorphous/crystalline interface. Dopant depth profiles agreed well with TRIM calculations for doses ≥ 4 × 10¹⁴ cm^-2. However, for lower doses the dopant was observed to have a profile nearer to the surface, due to trapping in the narrow surface damaged layer, in which it is more easily accommodated. Following epitaxial regrowth at 700°C, MEIS showed that -50 % of the As has moved into substitutional sites, consistent with activation and/or the formation of inactive As_nV clusters (n ≤ 4), while the remainder had segregated to and become trapped in a ≤1 nm wide layer, clearly located on the Si side of the oxide/Si interface. Very low energy SIMS analysis at normal incidence is able to resolve these ultra shallow peaks, including the As pileup following epitaxial regrowth. They also confirmed that As retention was complete during dose build up and annealing.

Original language	English
Title of host publication	2002 14th International Conference on Ion Implantation Technology
Subtitle of host publication	IIT 2002 - Proceedings
Editors	Bob Brown, Terry L. Alford, Mike Nastasi, Michael C. Vella
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	597-600
Number of pages	4
ISBN (Print)	0780371550
DOIs	https://doi.org/10.1109/IIT.2002.1258076
Publication status	Published - 1 Oct 2002
Externally published	Yes
Event	14th IEEE International Conference on Ion Implantation Technology - Taos, United States Duration: 22 Sep 2002 → 27 Sep 2002 Conference number: 14 https://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=1257923

Conference

Conference	14th IEEE International Conference on Ion Implantation Technology
Abbreviated title	IIT 2002
Country/Territory	United States
City	Taos
Period	22/09/02 → 27/09/02
Internet address	https://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=1257923

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Van Den Berg, J. A., Armour, D. G., Werner, M., Whelan, S., Vandervorst, W., Clarysse, T., Collart, E. H. J., Goldberg, R. D., Bailey, P., & Noakes, T. C. Q. (2002). High depth resolution characterization of the damage and annealing behaviour of ultra shallow As implants in Si. In B. Brown, T. L. Alford, M. Nastasi, & M. C. Vella (Eds.), 2002 14th International Conference on Ion Implantation Technology: IIT 2002 - Proceedings (pp. 597-600). [1258076] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIT.2002.1258076

Van Den Berg, J. A. ; Armour, D. G. ; Werner, M. et al. / High depth resolution characterization of the damage and annealing behaviour of ultra shallow As implants in Si. 2002 14th International Conference on Ion Implantation Technology: IIT 2002 - Proceedings. editor / Bob Brown ; Terry L. Alford ; Mike Nastasi ; Michael C. Vella. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 597-600

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title = "High depth resolution characterization of the damage and annealing behaviour of ultra shallow As implants in Si",

abstract = "The relationship between damage formation/annealing and As profile redistribution has been studied using low energy As implants into Si at 2.5 keV at doses between 3 × 1013 cm-2 and 2 × 1015 cm-2 at room temperature. Samples were annealed at temperatures between 600 and 1050°C. High depth resolution medium energy ion scattering (MEIS) and secondary ion mass spectrometry (SIMS) were used to characterise the damage build up and As profiles as a function of implant dose and anneal temperature. MEIS studies showed that damage does not accumulate according to the energy deposition function but proceeds from the surface inwards. This is ascribed to the accumulation of collision cascade produced interstitials that are attracted to and settle at initially the oxide/Si interface and later to the advancing amorphous/crystalline interface. Dopant depth profiles agreed well with TRIM calculations for doses ≥ 4 × 1014 cm-2. However, for lower doses the dopant was observed to have a profile nearer to the surface, due to trapping in the narrow surface damaged layer, in which it is more easily accommodated. Following epitaxial regrowth at 700°C, MEIS showed that -50 % of the As has moved into substitutional sites, consistent with activation and/or the formation of inactive AsnV clusters (n ≤ 4), while the remainder had segregated to and become trapped in a ≤1 nm wide layer, clearly located on the Si side of the oxide/Si interface. Very low energy SIMS analysis at normal incidence is able to resolve these ultra shallow peaks, including the As pileup following epitaxial regrowth. They also confirmed that As retention was complete during dose build up and annealing.",

keywords = "component, dopant segregation, MEIS, SIMS, SPE, ULE As implant and damage profiling",

author = "{Van Den Berg}, {J. A.} and Armour, {D. G.} and M. Werner and S. Whelan and W. Vandervorst and T. Clarysse and Collart, {E. H.J.} and Goldberg, {R. D.} and P. Bailey and Noakes, {T. C.Q.}",

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doi = "10.1109/IIT.2002.1258076",

language = "English",

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editor = "Bob Brown and Alford, {Terry L.} and Mike Nastasi and Vella, {Michael C.}",

booktitle = "2002 14th International Conference on Ion Implantation Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "14th IEEE International Conference on Ion Implantation Technology, IIT 2002 ; Conference date: 22-09-2002 Through 27-09-2002",

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}

Van Den Berg, JA, Armour, DG, Werner, M, Whelan, S, Vandervorst, W, Clarysse, T, Collart, EHJ, Goldberg, RD, Bailey, P & Noakes, TCQ 2002, High depth resolution characterization of the damage and annealing behaviour of ultra shallow As implants in Si. in B Brown, TL Alford, M Nastasi & MC Vella (eds), 2002 14th International Conference on Ion Implantation Technology: IIT 2002 - Proceedings., 1258076, Institute of Electrical and Electronics Engineers Inc., pp. 597-600, 14th IEEE International Conference on Ion Implantation Technology, Taos, New Mexico, United States, 22/09/02. https://doi.org/10.1109/IIT.2002.1258076

High depth resolution characterization of the damage and annealing behaviour of ultra shallow As implants in Si. / Van Den Berg, J. A.; Armour, D. G.; Werner, M. et al.

2002 14th International Conference on Ion Implantation Technology: IIT 2002 - Proceedings. ed. / Bob Brown; Terry L. Alford; Mike Nastasi; Michael C. Vella. Institute of Electrical and Electronics Engineers Inc., 2002. p. 597-600 1258076.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - High depth resolution characterization of the damage and annealing behaviour of ultra shallow As implants in Si

AU - Van Den Berg, J. A.

AU - Armour, D. G.

AU - Werner, M.

AU - Whelan, S.

AU - Vandervorst, W.

AU - Clarysse, T.

AU - Collart, E. H.J.

AU - Goldberg, R. D.

AU - Bailey, P.

AU - Noakes, T. C.Q.

N1 - Conference code: 14

PY - 2002/10/1

Y1 - 2002/10/1

N2 - The relationship between damage formation/annealing and As profile redistribution has been studied using low energy As implants into Si at 2.5 keV at doses between 3 × 1013 cm-2 and 2 × 1015 cm-2 at room temperature. Samples were annealed at temperatures between 600 and 1050°C. High depth resolution medium energy ion scattering (MEIS) and secondary ion mass spectrometry (SIMS) were used to characterise the damage build up and As profiles as a function of implant dose and anneal temperature. MEIS studies showed that damage does not accumulate according to the energy deposition function but proceeds from the surface inwards. This is ascribed to the accumulation of collision cascade produced interstitials that are attracted to and settle at initially the oxide/Si interface and later to the advancing amorphous/crystalline interface. Dopant depth profiles agreed well with TRIM calculations for doses ≥ 4 × 1014 cm-2. However, for lower doses the dopant was observed to have a profile nearer to the surface, due to trapping in the narrow surface damaged layer, in which it is more easily accommodated. Following epitaxial regrowth at 700°C, MEIS showed that -50 % of the As has moved into substitutional sites, consistent with activation and/or the formation of inactive AsnV clusters (n ≤ 4), while the remainder had segregated to and become trapped in a ≤1 nm wide layer, clearly located on the Si side of the oxide/Si interface. Very low energy SIMS analysis at normal incidence is able to resolve these ultra shallow peaks, including the As pileup following epitaxial regrowth. They also confirmed that As retention was complete during dose build up and annealing.

AB - The relationship between damage formation/annealing and As profile redistribution has been studied using low energy As implants into Si at 2.5 keV at doses between 3 × 1013 cm-2 and 2 × 1015 cm-2 at room temperature. Samples were annealed at temperatures between 600 and 1050°C. High depth resolution medium energy ion scattering (MEIS) and secondary ion mass spectrometry (SIMS) were used to characterise the damage build up and As profiles as a function of implant dose and anneal temperature. MEIS studies showed that damage does not accumulate according to the energy deposition function but proceeds from the surface inwards. This is ascribed to the accumulation of collision cascade produced interstitials that are attracted to and settle at initially the oxide/Si interface and later to the advancing amorphous/crystalline interface. Dopant depth profiles agreed well with TRIM calculations for doses ≥ 4 × 1014 cm-2. However, for lower doses the dopant was observed to have a profile nearer to the surface, due to trapping in the narrow surface damaged layer, in which it is more easily accommodated. Following epitaxial regrowth at 700°C, MEIS showed that -50 % of the As has moved into substitutional sites, consistent with activation and/or the formation of inactive AsnV clusters (n ≤ 4), while the remainder had segregated to and become trapped in a ≤1 nm wide layer, clearly located on the Si side of the oxide/Si interface. Very low energy SIMS analysis at normal incidence is able to resolve these ultra shallow peaks, including the As pileup following epitaxial regrowth. They also confirmed that As retention was complete during dose build up and annealing.

KW - component

KW - dopant segregation

KW - MEIS

KW - SIMS, SPE

KW - ULE As implant and damage profiling

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SN - 0780371550

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EP - 600

BT - 2002 14th International Conference on Ion Implantation Technology

A2 - Brown, Bob

A2 - Alford, Terry L.

A2 - Nastasi, Mike

A2 - Vella, Michael C.

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 14th IEEE International Conference on Ion Implantation Technology

Y2 - 22 September 2002 through 27 September 2002

ER -

Van Den Berg JA, Armour DG, Werner M, Whelan S, Vandervorst W, Clarysse T et al. High depth resolution characterization of the damage and annealing behaviour of ultra shallow As implants in Si. In Brown B, Alford TL, Nastasi M, Vella MC, editors, 2002 14th International Conference on Ion Implantation Technology: IIT 2002 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2002. p. 597-600. 1258076 doi: 10.1109/IIT.2002.1258076

High depth resolution characterization of the damage and annealing behaviour of ultra shallow As implants in Si

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