High depth resolution characterization of the damage and annealing behaviour of ultra shallow As implants in Si

J. A. Van Den Berg, D. G. Armour, M. Werner, S. Whelan, W. Vandervorst, T. Clarysse, E. H.J. Collart, R. D. Goldberg, P. Bailey, T. C.Q. Noakes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The relationship between damage formation/annealing and As profile redistribution has been studied using low energy As implants into Si at 2.5 keV at doses between 3 × 1013 cm-2 and 2 × 1015 cm-2 at room temperature. Samples were annealed at temperatures between 600 and 1050°C. High depth resolution medium energy ion scattering (MEIS) and secondary ion mass spectrometry (SIMS) were used to characterise the damage build up and As profiles as a function of implant dose and anneal temperature. MEIS studies showed that damage does not accumulate according to the energy deposition function but proceeds from the surface inwards. This is ascribed to the accumulation of collision cascade produced interstitials that are attracted to and settle at initially the oxide/Si interface and later to the advancing amorphous/crystalline interface. Dopant depth profiles agreed well with TRIM calculations for doses ≥ 4 × 1014 cm-2. However, for lower doses the dopant was observed to have a profile nearer to the surface, due to trapping in the narrow surface damaged layer, in which it is more easily accommodated. Following epitaxial regrowth at 700°C, MEIS showed that -50 % of the As has moved into substitutional sites, consistent with activation and/or the formation of inactive AsnV clusters (n ≤ 4), while the remainder had segregated to and become trapped in a ≤1 nm wide layer, clearly located on the Si side of the oxide/Si interface. Very low energy SIMS analysis at normal incidence is able to resolve these ultra shallow peaks, including the As pileup following epitaxial regrowth. They also confirmed that As retention was complete during dose build up and annealing.

Original languageEnglish
Title of host publication2002 14th International Conference on Ion Implantation Technology
Subtitle of host publicationIIT 2002 - Proceedings
EditorsBob Brown, Terry L. Alford, Mike Nastasi, Michael C. Vella
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages597-600
Number of pages4
ISBN (Print)0780371550
DOIs
Publication statusPublished - 1 Oct 2002
Externally publishedYes
Event14th IEEE International Conference on Ion Implantation Technology - Taos, United States
Duration: 22 Sep 200227 Sep 2002
Conference number: 14

Conference

Conference14th IEEE International Conference on Ion Implantation Technology
Abbreviated titleIIT 2002
CountryUnited States
CityTaos
Period22/09/0227/09/02

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Scattering
Annealing
Ions
Secondary ion mass spectrometry
damage
Oxides
annealing
ion scattering
dosage
Doping (additives)
profiles
Temperature
secondary ion mass spectrometry
energy
Chemical activation
Crystalline materials
oxides
surface layers
cascades
interstitials

Cite this

Van Den Berg, J. A., Armour, D. G., Werner, M., Whelan, S., Vandervorst, W., Clarysse, T., ... Noakes, T. C. Q. (2002). High depth resolution characterization of the damage and annealing behaviour of ultra shallow As implants in Si. In B. Brown, T. L. Alford, M. Nastasi, & M. C. Vella (Eds.), 2002 14th International Conference on Ion Implantation Technology: IIT 2002 - Proceedings (pp. 597-600). [1258076] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIT.2002.1258076
Van Den Berg, J. A. ; Armour, D. G. ; Werner, M. ; Whelan, S. ; Vandervorst, W. ; Clarysse, T. ; Collart, E. H.J. ; Goldberg, R. D. ; Bailey, P. ; Noakes, T. C.Q. / High depth resolution characterization of the damage and annealing behaviour of ultra shallow As implants in Si. 2002 14th International Conference on Ion Implantation Technology: IIT 2002 - Proceedings. editor / Bob Brown ; Terry L. Alford ; Mike Nastasi ; Michael C. Vella. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 597-600
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abstract = "The relationship between damage formation/annealing and As profile redistribution has been studied using low energy As implants into Si at 2.5 keV at doses between 3 × 1013 cm-2 and 2 × 1015 cm-2 at room temperature. Samples were annealed at temperatures between 600 and 1050°C. High depth resolution medium energy ion scattering (MEIS) and secondary ion mass spectrometry (SIMS) were used to characterise the damage build up and As profiles as a function of implant dose and anneal temperature. MEIS studies showed that damage does not accumulate according to the energy deposition function but proceeds from the surface inwards. This is ascribed to the accumulation of collision cascade produced interstitials that are attracted to and settle at initially the oxide/Si interface and later to the advancing amorphous/crystalline interface. Dopant depth profiles agreed well with TRIM calculations for doses ≥ 4 × 1014 cm-2. However, for lower doses the dopant was observed to have a profile nearer to the surface, due to trapping in the narrow surface damaged layer, in which it is more easily accommodated. Following epitaxial regrowth at 700°C, MEIS showed that -50 {\%} of the As has moved into substitutional sites, consistent with activation and/or the formation of inactive AsnV clusters (n ≤ 4), while the remainder had segregated to and become trapped in a ≤1 nm wide layer, clearly located on the Si side of the oxide/Si interface. Very low energy SIMS analysis at normal incidence is able to resolve these ultra shallow peaks, including the As pileup following epitaxial regrowth. They also confirmed that As retention was complete during dose build up and annealing.",
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Van Den Berg, JA, Armour, DG, Werner, M, Whelan, S, Vandervorst, W, Clarysse, T, Collart, EHJ, Goldberg, RD, Bailey, P & Noakes, TCQ 2002, High depth resolution characterization of the damage and annealing behaviour of ultra shallow As implants in Si. in B Brown, TL Alford, M Nastasi & MC Vella (eds), 2002 14th International Conference on Ion Implantation Technology: IIT 2002 - Proceedings., 1258076, Institute of Electrical and Electronics Engineers Inc., pp. 597-600, 14th IEEE International Conference on Ion Implantation Technology, Taos, United States, 22/09/02. https://doi.org/10.1109/IIT.2002.1258076

High depth resolution characterization of the damage and annealing behaviour of ultra shallow As implants in Si. / Van Den Berg, J. A.; Armour, D. G.; Werner, M.; Whelan, S.; Vandervorst, W.; Clarysse, T.; Collart, E. H.J.; Goldberg, R. D.; Bailey, P.; Noakes, T. C.Q.

2002 14th International Conference on Ion Implantation Technology: IIT 2002 - Proceedings. ed. / Bob Brown; Terry L. Alford; Mike Nastasi; Michael C. Vella. Institute of Electrical and Electronics Engineers Inc., 2002. p. 597-600 1258076.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Werner, M.

AU - Whelan, S.

AU - Vandervorst, W.

AU - Clarysse, T.

AU - Collart, E. H.J.

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KW - component

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Van Den Berg JA, Armour DG, Werner M, Whelan S, Vandervorst W, Clarysse T et al. High depth resolution characterization of the damage and annealing behaviour of ultra shallow As implants in Si. In Brown B, Alford TL, Nastasi M, Vella MC, editors, 2002 14th International Conference on Ion Implantation Technology: IIT 2002 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2002. p. 597-600. 1258076 https://doi.org/10.1109/IIT.2002.1258076