Abstract
This letter presents the design of a high-efficiency Class-F power amplifier in pseudomorphic high electron mobility transistor technology using a novel load-pull/source-pull simulation-based approach. The second harmonic input termination is shown to have a critical influence on performance, which is justified by the shape of the simulated waveforms. Experimental validation is carried out on a 2-GHz practical circuit using a medium-power packaged device. Two cases are compared both theoretically and experimentally: for the best and worst case second harmonic input terminations, 76% and 42% saturated power-added efficiency are measured, respectively. In addition, the worst case termination degrades the saturated C/I3 by 7.5 dB.
Original language | English |
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Article number | 1588944 |
Pages (from-to) | 81-83 |
Number of pages | 3 |
Journal | IEEE Microwave and Wireless Components Letters |
Volume | 16 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1 Feb 2006 |
Externally published | Yes |