Abstract
This letter presents the design of a high-efficiency Class-F power amplifier in pseudomorphic high electron mobility transistor technology using a novel load-pull/source-pull simulation-based approach. The second harmonic input termination is shown to have a critical influence on performance, which is justified by the shape of the simulated waveforms. Experimental validation is carried out on a 2-GHz practical circuit using a medium-power packaged device. Two cases are compared both theoretically and experimentally: for the best and worst case second harmonic input terminations, 76% and 42% saturated power-added efficiency are measured, respectively. In addition, the worst case termination degrades the saturated C/I3 by 7.5 dB.
| Original language | English |
|---|---|
| Article number | 1588944 |
| Pages (from-to) | 81-83 |
| Number of pages | 3 |
| Journal | IEEE Microwave and Wireless Components Letters |
| Volume | 16 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1 Feb 2006 |
| Externally published | Yes |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 9 Industry, Innovation, and Infrastructure
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