High resolution depth profile analysis of ultra thin high-κ Hf based films using MEIS compared with XTEM, XRF, SE and XPS

J. A. Van Den Berg, M. A. Reading, A. Parisini, M. Kolbe, B. Beckhoff, S. Ladas, M. Fried, P. Petrik, P. Bailey, T. Noakes, T. Conard, S. De Gendt

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Abstract

Nanometre thin high-k hafnium oxide (HfO2) or Hf silicate layers combined with a sub-nm SiO2layers have become Si compatible gate dielectrics. Medium energy ion scattering (MEIS) analysis has been applied to a range of such MOCVD grown HfO2/SiO2and HfSiOx(60%Hf)/SiO2gate oxide films of thickness between 1 and 2 nm on top of Si(100), before and after decoupled plasma nitridation (DPN). MEIS in combination with energy spectrum simulation provides quantitative layer information with sub-nm resolution on these layer structures and their atomic composition that is in excellent agreement with a) the as grown layer parameters and b) results obtained from techniques, such as SE, XPS, XRF and XTEM. MEIS analysis of a metal gate, high-k TiN/A12O3/HfO2/SiO2/Si stack shows the interdiffusion, after thermal treatment, of Hf and A1 from the caplayer, which was inserted to modify the metal gate work function.
LanguageEnglish
Pages349-361
Number of pages13
JournalECS Transactions
Volume25
Issue number3
DOIs
Publication statusPublished - 2009
Externally publishedYes

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X ray photoelectron spectroscopy
Scattering
Ions
Hafnium oxides
Nitridation
Gate dielectrics
Metallorganic chemical vapor deposition
Metals
Oxide films
Silicates
Heat treatment
Plasmas
Chemical analysis

Cite this

Van Den Berg, J. A. ; Reading, M. A. ; Parisini, A. ; Kolbe, M. ; Beckhoff, B. ; Ladas, S. ; Fried, M. ; Petrik, P. ; Bailey, P. ; Noakes, T. ; Conard, T. ; De Gendt, S. / High resolution depth profile analysis of ultra thin high-κ Hf based films using MEIS compared with XTEM, XRF, SE and XPS. In: ECS Transactions. 2009 ; Vol. 25, No. 3. pp. 349-361.
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abstract = "Nanometre thin high-k hafnium oxide (HfO2) or Hf silicate layers combined with a sub-nm SiO2layers have become Si compatible gate dielectrics. Medium energy ion scattering (MEIS) analysis has been applied to a range of such MOCVD grown HfO2/SiO2and HfSiOx(60{\%}Hf)/SiO2gate oxide films of thickness between 1 and 2 nm on top of Si(100), before and after decoupled plasma nitridation (DPN). MEIS in combination with energy spectrum simulation provides quantitative layer information with sub-nm resolution on these layer structures and their atomic composition that is in excellent agreement with a) the as grown layer parameters and b) results obtained from techniques, such as SE, XPS, XRF and XTEM. MEIS analysis of a metal gate, high-k TiN/A12O3/HfO2/SiO2/Si stack shows the interdiffusion, after thermal treatment, of Hf and A1 from the caplayer, which was inserted to modify the metal gate work function.",
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Van Den Berg, JA, Reading, MA, Parisini, A, Kolbe, M, Beckhoff, B, Ladas, S, Fried, M, Petrik, P, Bailey, P, Noakes, T, Conard, T & De Gendt, S 2009, 'High resolution depth profile analysis of ultra thin high-κ Hf based films using MEIS compared with XTEM, XRF, SE and XPS', ECS Transactions, vol. 25, no. 3, pp. 349-361. https://doi.org/10.1149/1.3204425

High resolution depth profile analysis of ultra thin high-κ Hf based films using MEIS compared with XTEM, XRF, SE and XPS. / Van Den Berg, J. A.; Reading, M. A.; Parisini, A.; Kolbe, M.; Beckhoff, B.; Ladas, S.; Fried, M.; Petrik, P.; Bailey, P.; Noakes, T.; Conard, T.; De Gendt, S.

In: ECS Transactions, Vol. 25, No. 3, 2009, p. 349-361.

Research output: Contribution to journalArticle

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AU - Van Den Berg, J. A.

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AU - Parisini, A.

AU - Kolbe, M.

AU - Beckhoff, B.

AU - Ladas, S.

AU - Fried, M.

AU - Petrik, P.

AU - Bailey, P.

AU - Noakes, T.

AU - Conard, T.

AU - De Gendt, S.

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