High resolution medium energy ion scattering analysis for the quantitative depth profiling of ultrathin high- k layers

M. A. Reading, J. A. Van Den Berg, P. C. Zalm, D. G. Armour, P. Bailey, T. C.Q. Noakes, A. Parisini, T. Conard, S. De Gendt

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Abstract

Ultrathin high- k layers such as hafnium oxide (Hf O2) in combination with a subnanometer Si O2or Hf silicate have emerged as Si compatible gate dielectric materials. Medium energy ion scattering (MEIS) analysis has been carried out on a range of such metal oxide chemical vapor deposition grown Hf O2/Si O2and HfSi Ox(60%Hf) /Si O2gate oxide films of thickness between 1 and 2 nm on Si(100), before and after decoupled plasma nitridation (DPN). The ability of MEIS in combination with energy spectrum simulation to provide quantitative layer information with subnanometer resolution is illustrated and the effect of the DPN process is shown. Excellent agreement on the deduced layer structures and atomic composition with the as grown layer parameters, as well as with those obtained from cross section electron microscopy and other studies, is demonstrated. MEIS analysis of a high- k, metal gate TiN/ Al2O3/Hf O2/Si O2/Si stack shows the interdiffusion, after thermal treatment, of Hf and Al from the caplayer, inserted to modify the metal gate workfunction.
LanguageEnglish
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume28
Issue number1
DOIs
Publication statusPublished - Mar 2010
Externally publishedYes

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ion scattering
high resolution
hafnium oxides
energy
metals
metal oxides
oxide films
silicates
electron microscopy
energy spectra
vapor deposition
cross sections
simulation

Cite this

Reading, M. A. ; Van Den Berg, J. A. ; Zalm, P. C. ; Armour, D. G. ; Bailey, P. ; Noakes, T. C.Q. ; Parisini, A. ; Conard, T. ; De Gendt, S. / High resolution medium energy ion scattering analysis for the quantitative depth profiling of ultrathin high- k layers. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2010 ; Vol. 28, No. 1.
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abstract = "Ultrathin high- k layers such as hafnium oxide (Hf O2) in combination with a subnanometer Si O2or Hf silicate have emerged as Si compatible gate dielectric materials. Medium energy ion scattering (MEIS) analysis has been carried out on a range of such metal oxide chemical vapor deposition grown Hf O2/Si O2and HfSi Ox(60{\%}Hf) /Si O2gate oxide films of thickness between 1 and 2 nm on Si(100), before and after decoupled plasma nitridation (DPN). The ability of MEIS in combination with energy spectrum simulation to provide quantitative layer information with subnanometer resolution is illustrated and the effect of the DPN process is shown. Excellent agreement on the deduced layer structures and atomic composition with the as grown layer parameters, as well as with those obtained from cross section electron microscopy and other studies, is demonstrated. MEIS analysis of a high- k, metal gate TiN/ Al2O3/Hf O2/Si O2/Si stack shows the interdiffusion, after thermal treatment, of Hf and Al from the caplayer, inserted to modify the metal gate workfunction.",
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High resolution medium energy ion scattering analysis for the quantitative depth profiling of ultrathin high- k layers. / Reading, M. A.; Van Den Berg, J. A.; Zalm, P. C.; Armour, D. G.; Bailey, P.; Noakes, T. C.Q.; Parisini, A.; Conard, T.; De Gendt, S.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 28, No. 1, 03.2010.

Research output: Contribution to journalArticle

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T1 - High resolution medium energy ion scattering analysis for the quantitative depth profiling of ultrathin high- k layers

AU - Reading, M. A.

AU - Van Den Berg, J. A.

AU - Zalm, P. C.

AU - Armour, D. G.

AU - Bailey, P.

AU - Noakes, T. C.Q.

AU - Parisini, A.

AU - Conard, T.

AU - De Gendt, S.

PY - 2010/3

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N2 - Ultrathin high- k layers such as hafnium oxide (Hf O2) in combination with a subnanometer Si O2or Hf silicate have emerged as Si compatible gate dielectric materials. Medium energy ion scattering (MEIS) analysis has been carried out on a range of such metal oxide chemical vapor deposition grown Hf O2/Si O2and HfSi Ox(60%Hf) /Si O2gate oxide films of thickness between 1 and 2 nm on Si(100), before and after decoupled plasma nitridation (DPN). The ability of MEIS in combination with energy spectrum simulation to provide quantitative layer information with subnanometer resolution is illustrated and the effect of the DPN process is shown. Excellent agreement on the deduced layer structures and atomic composition with the as grown layer parameters, as well as with those obtained from cross section electron microscopy and other studies, is demonstrated. MEIS analysis of a high- k, metal gate TiN/ Al2O3/Hf O2/Si O2/Si stack shows the interdiffusion, after thermal treatment, of Hf and Al from the caplayer, inserted to modify the metal gate workfunction.

AB - Ultrathin high- k layers such as hafnium oxide (Hf O2) in combination with a subnanometer Si O2or Hf silicate have emerged as Si compatible gate dielectric materials. Medium energy ion scattering (MEIS) analysis has been carried out on a range of such metal oxide chemical vapor deposition grown Hf O2/Si O2and HfSi Ox(60%Hf) /Si O2gate oxide films of thickness between 1 and 2 nm on Si(100), before and after decoupled plasma nitridation (DPN). The ability of MEIS in combination with energy spectrum simulation to provide quantitative layer information with subnanometer resolution is illustrated and the effect of the DPN process is shown. Excellent agreement on the deduced layer structures and atomic composition with the as grown layer parameters, as well as with those obtained from cross section electron microscopy and other studies, is demonstrated. MEIS analysis of a high- k, metal gate TiN/ Al2O3/Hf O2/Si O2/Si stack shows the interdiffusion, after thermal treatment, of Hf and Al from the caplayer, inserted to modify the metal gate workfunction.

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