Hole transport simulations in SiGe cascade quantum wells

Z. Ikonić, P. Harrison, R. W. Kelsall

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


Hole transport in p-Si/SiGe quantum well cascade structures has been analyzed using a rate equation method with thermal balancing (self-consistent energy balance method). The carrier and energy relaxation due to alloy disorder, acoustic and optical phonon scattering are included. The model includes the in-plane k-space anisotropy. The results are compared to those obtained from Monte Carlo simulations and from the basic particle rate equation method.

Original languageEnglish
Pages (from-to)907-910
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number2-4
Publication statusPublished - 1 Mar 2004
Externally publishedYes
Event11th International Conference on Modulated Semiconductor Structures - Nara, Japan
Duration: 14 Jul 200318 Jul 2003
Conference number: 11


Dive into the research topics of 'Hole transport simulations in SiGe cascade quantum wells'. Together they form a unique fingerprint.

Cite this