Hydrogen induced growth and coalescence of helium-based defects

Maxime Vallet, Jean François Barbot, Steve Donnelly, Jonathan Hinks, Marie France Beaufort

Research output: Contribution to journalArticle

Abstract

The first stages of growth of He-based planar defects under H supply have been investigated in (001)-oriented Si. The H atoms were introduced by implantation using the MIAMI facility. Implantations at different temperatures were conducted in the microscope chamber and thus the evolution of He-plates under H implantation was observed in real-time. In situ transmission electron microscopy during the subsequent annealing was also performed. Results show that the growth phenomena are governed by diffusion mechanisms. The kinetic model of Johnson-Mehl-Avrami-Kolmogorov was successfully applied to model the evolution of the diameters of the He-plates either as function of the temperature of annealing or of the fluence. Isotropic coalescence of close defects occurs when the out-of plane tensile stress reaches the yield strength.

LanguageEnglish
Pages1156-1159
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume12
Issue number8
DOIs
Publication statusPublished - 1 Aug 2015

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coalescing
implantation
helium
defects
hydrogen
plane stress
annealing
yield strength
tensile stress
fluence
chambers
microscopes
transmission electron microscopy
temperature
kinetics
atoms

Cite this

Vallet, Maxime ; Barbot, Jean François ; Donnelly, Steve ; Hinks, Jonathan ; Beaufort, Marie France. / Hydrogen induced growth and coalescence of helium-based defects. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2015 ; Vol. 12, No. 8. pp. 1156-1159.
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Hydrogen induced growth and coalescence of helium-based defects. / Vallet, Maxime; Barbot, Jean François; Donnelly, Steve; Hinks, Jonathan; Beaufort, Marie France.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 12, No. 8, 01.08.2015, p. 1156-1159.

Research output: Contribution to journalArticle

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