Hydrogen induced growth and coalescence of helium-based defects

Maxime Vallet, Jean François Barbot, Steve Donnelly, Jonathan Hinks, Marie France Beaufort

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


The first stages of growth of He-based planar defects under H supply have been investigated in (001)-oriented Si. The H atoms were introduced by implantation using the MIAMI facility. Implantations at different temperatures were conducted in the microscope chamber and thus the evolution of He-plates under H implantation was observed in real-time. In situ transmission electron microscopy during the subsequent annealing was also performed. Results show that the growth phenomena are governed by diffusion mechanisms. The kinetic model of Johnson-Mehl-Avrami-Kolmogorov was successfully applied to model the evolution of the diameters of the He-plates either as function of the temperature of annealing or of the fluence. Isotropic coalescence of close defects occurs when the out-of plane tensile stress reaches the yield strength.

Original languageEnglish
Pages (from-to)1156-1159
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number8
Early online date15 Jul 2015
Publication statusPublished - 1 Aug 2015
Event17th International Conference on Extended Defects in Semiconductors - Göttingen, Germany
Duration: 14 Sep 201419 Sep 2014
Conference number: 17


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