Implant temperature dependence of transient-enhanced diffusion in silicon (1 0 0) implanted with low-energy arsenic ions

S. Whelan, D. G. Armour, J. A. Van Den Berg, R. D. Goldberg, S. Zhang, P. Bailey, T. C.Q. Noakes

Research output: Contribution to journalArticle

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Abstract

The diffusion of arsenic implanted into silicon at low ion energies (2.5 keV) has been studied with medium-energy ion scattering, secondary ion mass spectrometry and four-point probe measurements. The dopant redistribution together with the corresponding damage recovery and electrical activation produced by high-temperature (550-975 °C) rapid thermal anneals has been investigated for a range of substrate temperatures (+25, +300 and -120 °C) during implant. Initial results show an implant temperature dependence of the damage structure and arsenic lattice position prior to anneal. Solid-phase epitaxial regrowth was observed following 550 °C, 10 s anneals for all implant temperatures and resulted in approximately 60% of the implanted arsenic moving to substitutional positions. Annealing at 875 °C resulted in similar arsenic redistribution for all implant temperatures. Following annealing at 925 °C, transient-enhanced diffusion was observed in all samples with more rapid diffusion in the +25 °C samples than either the -120 or +300 °C implants, which had similar dopant profiles. In the 975 °C anneal range, similar rates of implant redistribution were observed for the +300 and +25 °C implants, while diffusion in the -120 °C sample was reduced. These observations are discussed qualitatively in terms of the nature and density of the complex defects existing in the as-implanted samples.

Original languageEnglish
Pages (from-to)285-290
Number of pages6
JournalMaterials Science in Semiconductor Processing
Volume3
Issue number4
DOIs
Publication statusPublished - 1 Aug 2000
Externally publishedYes

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Arsenic
Silicon
arsenic
Ions
temperature dependence
silicon
ions
damage
Temperature
annealing
Doping (additives)
energy
Annealing
ion scattering
secondary ion mass spectrometry
temperature
solid phases
Secondary ion mass spectrometry
recovery
activation

Cite this

Whelan, S. ; Armour, D. G. ; Van Den Berg, J. A. ; Goldberg, R. D. ; Zhang, S. ; Bailey, P. ; Noakes, T. C.Q. / Implant temperature dependence of transient-enhanced diffusion in silicon (1 0 0) implanted with low-energy arsenic ions. In: Materials Science in Semiconductor Processing. 2000 ; Vol. 3, No. 4. pp. 285-290.
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Implant temperature dependence of transient-enhanced diffusion in silicon (1 0 0) implanted with low-energy arsenic ions. / Whelan, S.; Armour, D. G.; Van Den Berg, J. A.; Goldberg, R. D.; Zhang, S.; Bailey, P.; Noakes, T. C.Q.

In: Materials Science in Semiconductor Processing, Vol. 3, No. 4, 01.08.2000, p. 285-290.

Research output: Contribution to journalArticle

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T1 - Implant temperature dependence of transient-enhanced diffusion in silicon (1 0 0) implanted with low-energy arsenic ions

AU - Whelan, S.

AU - Armour, D. G.

AU - Van Den Berg, J. A.

AU - Goldberg, R. D.

AU - Zhang, S.

AU - Bailey, P.

AU - Noakes, T. C.Q.

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N2 - The diffusion of arsenic implanted into silicon at low ion energies (2.5 keV) has been studied with medium-energy ion scattering, secondary ion mass spectrometry and four-point probe measurements. The dopant redistribution together with the corresponding damage recovery and electrical activation produced by high-temperature (550-975 °C) rapid thermal anneals has been investigated for a range of substrate temperatures (+25, +300 and -120 °C) during implant. Initial results show an implant temperature dependence of the damage structure and arsenic lattice position prior to anneal. Solid-phase epitaxial regrowth was observed following 550 °C, 10 s anneals for all implant temperatures and resulted in approximately 60% of the implanted arsenic moving to substitutional positions. Annealing at 875 °C resulted in similar arsenic redistribution for all implant temperatures. Following annealing at 925 °C, transient-enhanced diffusion was observed in all samples with more rapid diffusion in the +25 °C samples than either the -120 or +300 °C implants, which had similar dopant profiles. In the 975 °C anneal range, similar rates of implant redistribution were observed for the +300 and +25 °C implants, while diffusion in the -120 °C sample was reduced. These observations are discussed qualitatively in terms of the nature and density of the complex defects existing in the as-implanted samples.

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