Implant temperature dependence of transient-enhanced diffusion in silicon (1 0 0) implanted with low-energy arsenic ions

S. Whelan, D. G. Armour, J. A. Van Den Berg, R. D. Goldberg, S. Zhang, P. Bailey, T. C.Q. Noakes

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The diffusion of arsenic implanted into silicon at low ion energies (2.5 keV) has been studied with medium-energy ion scattering, secondary ion mass spectrometry and four-point probe measurements. The dopant redistribution together with the corresponding damage recovery and electrical activation produced by high-temperature (550-975 °C) rapid thermal anneals has been investigated for a range of substrate temperatures (+25, +300 and -120 °C) during implant. Initial results show an implant temperature dependence of the damage structure and arsenic lattice position prior to anneal. Solid-phase epitaxial regrowth was observed following 550 °C, 10 s anneals for all implant temperatures and resulted in approximately 60% of the implanted arsenic moving to substitutional positions. Annealing at 875 °C resulted in similar arsenic redistribution for all implant temperatures. Following annealing at 925 °C, transient-enhanced diffusion was observed in all samples with more rapid diffusion in the +25 °C samples than either the -120 or +300 °C implants, which had similar dopant profiles. In the 975 °C anneal range, similar rates of implant redistribution were observed for the +300 and +25 °C implants, while diffusion in the -120 °C sample was reduced. These observations are discussed qualitatively in terms of the nature and density of the complex defects existing in the as-implanted samples.

Original languageEnglish
Pages (from-to)285-290
Number of pages6
JournalMaterials Science in Semiconductor Processing
Issue number4
Publication statusPublished - 1 Aug 2000
Externally publishedYes


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