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Implant temperature dependence of transient-enhanced diffusion in silicon (1 0 0) implanted with low-energy arsenic ions
S. Whelan, D. G. Armour, J. A. Van Den Berg, R. D. Goldberg, S. Zhang, P. Bailey, T. C.Q. Noakes
Research output: Contribution to journal › Article › peer-review
5
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(Scopus)