Impurity bound-to-unbound terahertz sensors based on beryllium and silicon δ -doped GaAs/AlAs multiple quantum wells

D. Seliuta; J. Kavaliauskas; B. Čechavičius; S. Balakauskas; G. Valušis; B. Sherliker; M. P. Halsall; P. Harrison; M. Lachab; S. P. Khanna; E. H. Linfield

doi:10.1063/1.2839585

Impurity bound-to-unbound terahertz sensors based on beryllium and silicon δ -doped GaAs/AlAs multiple quantum wells

D. Seliuta, J. Kavaliauskas, B. Čechavičius, S. Balakauskas, G. Valušis, B. Sherliker, M. P. Halsall, P. Harrison, M. Lachab, S. P. Khanna, E. H. Linfield

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Abstract

Beryllium and silicon δ -doped GaAs/AlAs multiple quantum wells (MQWs) were designed and fabricated for selective sensing of terahertz radiation. Optical characterization of the structures by photoreflectance spectroscopy has indicated a presence of built-in electric fields-from 18 up to 49 kVcm depending on the structure design-located mainly in the cap and buffer layers, but do not penetrating into the MQWs region. Terahertz sensing under normal incidence via impurity bound-to-unbound transitions is demonstrated in photocurrent experiments within 0.6-4.2 THz in silicon-doped MQWs and 3.5-7.3 THz range in beryllium-doped MQWs at low temperatures.

Original language	English
Article number	053503
Journal	Applied Physics Letters
Volume	92
Issue number	5
Early online date	4 Feb 2008
DOIs	https://doi.org/10.1063/1.2839585
Publication status	Published - 4 Feb 2008
Externally published	Yes

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Seliuta, D., Kavaliauskas, J., Čechavičius, B., Balakauskas, S., Valušis, G., Sherliker, B., Halsall, M. P., Harrison, P., Lachab, M., Khanna, S. P., & Linfield, E. H. (2008). Impurity bound-to-unbound terahertz sensors based on beryllium and silicon δ -doped GaAs/AlAs multiple quantum wells. Applied Physics Letters, 92(5), Article 053503. https://doi.org/10.1063/1.2839585

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title = "Impurity bound-to-unbound terahertz sensors based on beryllium and silicon δ -doped GaAs/AlAs multiple quantum wells",

abstract = "Beryllium and silicon δ -doped GaAs/AlAs multiple quantum wells (MQWs) were designed and fabricated for selective sensing of terahertz radiation. Optical characterization of the structures by photoreflectance spectroscopy has indicated a presence of built-in electric fields-from 18 up to 49 kVcm depending on the structure design-located mainly in the cap and buffer layers, but do not penetrating into the MQWs region. Terahertz sensing under normal incidence via impurity bound-to-unbound transitions is demonstrated in photocurrent experiments within 0.6-4.2 THz in silicon-doped MQWs and 3.5-7.3 THz range in beryllium-doped MQWs at low temperatures.",

keywords = "Buffer layers, Electric fields, Electronic structure, Optical design, Photocurrents, Semiconducting gallium compounds",

author = "D. Seliuta and J. Kavaliauskas and B. {\v C}echavi{\v c}ius and S. Balakauskas and G. Valu{\v s}is and B. Sherliker and Halsall, \{M. P.\} and P. Harrison and M. Lachab and Khanna, \{S. P.\} and Linfield, \{E. H.\}",

note = "Funding Information: We are very grateful for Matthew Steer (Sheffield) for providing samples 1392, 1794, and 1795 as well as Jonathan Philips for the kind assistance during the FELIX experiments. The Vilnius group thanks the support from the Lithuanian State Science and Studies Foundation (Project No. C-07004) and the EOARD (Contract No. FA8655-06-1-3007).",

year = "2008",

month = feb,

day = "4",

doi = "10.1063/1.2839585",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

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TY - JOUR

T1 - Impurity bound-to-unbound terahertz sensors based on beryllium and silicon δ -doped GaAs/AlAs multiple quantum wells

AU - Seliuta, D.

AU - Kavaliauskas, J.

AU - Čechavičius, B.

AU - Balakauskas, S.

AU - Valušis, G.

AU - Sherliker, B.

AU - Halsall, M. P.

AU - Harrison, P.

AU - Lachab, M.

AU - Khanna, S. P.

AU - Linfield, E. H.

N1 - Funding Information: We are very grateful for Matthew Steer (Sheffield) for providing samples 1392, 1794, and 1795 as well as Jonathan Philips for the kind assistance during the FELIX experiments. The Vilnius group thanks the support from the Lithuanian State Science and Studies Foundation (Project No. C-07004) and the EOARD (Contract No. FA8655-06-1-3007).

PY - 2008/2/4

Y1 - 2008/2/4

N2 - Beryllium and silicon δ -doped GaAs/AlAs multiple quantum wells (MQWs) were designed and fabricated for selective sensing of terahertz radiation. Optical characterization of the structures by photoreflectance spectroscopy has indicated a presence of built-in electric fields-from 18 up to 49 kVcm depending on the structure design-located mainly in the cap and buffer layers, but do not penetrating into the MQWs region. Terahertz sensing under normal incidence via impurity bound-to-unbound transitions is demonstrated in photocurrent experiments within 0.6-4.2 THz in silicon-doped MQWs and 3.5-7.3 THz range in beryllium-doped MQWs at low temperatures.

AB - Beryllium and silicon δ -doped GaAs/AlAs multiple quantum wells (MQWs) were designed and fabricated for selective sensing of terahertz radiation. Optical characterization of the structures by photoreflectance spectroscopy has indicated a presence of built-in electric fields-from 18 up to 49 kVcm depending on the structure design-located mainly in the cap and buffer layers, but do not penetrating into the MQWs region. Terahertz sensing under normal incidence via impurity bound-to-unbound transitions is demonstrated in photocurrent experiments within 0.6-4.2 THz in silicon-doped MQWs and 3.5-7.3 THz range in beryllium-doped MQWs at low temperatures.

KW - Buffer layers

KW - Electric fields

KW - Electronic structure

KW - Optical design

KW - Photocurrents

KW - Semiconducting gallium compounds

UR - https://www.scopus.com/pages/publications/38949112836

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DO - 10.1063/1.2839585

M3 - Article

AN - SCOPUS:38949112836

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 053503

ER -

Impurity bound-to-unbound terahertz sensors based on beryllium and silicon δ -doped GaAs/AlAs multiple quantum wells

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