Abstract
While electroluminescence has been demonstrated at terahertz frequencies from Si/SiGe quantum cascade emitters, to date no laser has been achieved due to poor vertical con nement of the optical mode. A method of increasing the vertical con nement of the optical mode for a Si/SiGe quantum cascade laser is demonstrated using silicon-on-silicide technology. Such technology is used with epitaxial growth to demonstrate a strain-symmetrised 600 period Si/SiGe quantum cascade interwell emission and the polarisation is used to demonstrate the optical con nement. Electroluminescence is demonstrated at ∼3 THz (∼100 μm) from an interwell quantum cascade emitter structure. Calculated model overlap and waveguide losses for ridge waveguides are comparable to values from GaAs quantum cascade lasers demonstrated at terahertz frequencies.
Original language | English |
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Title of host publication | 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems |
Subtitle of host publication | Digest of Papers |
Editors | J.D. Cressler, J. Papapolymerou |
Publisher | IEEE |
Pages | 143-146 |
Number of pages | 4 |
ISBN (Print) | 0780387031 |
DOIs | |
Publication status | Published - 14 Mar 2005 |
Externally published | Yes |
Event | Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers - Atlanta, United States Duration: 8 Sep 2004 → 10 Sep 2004 |
Conference
Conference | Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems |
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Country/Territory | United States |
City | Atlanta |
Period | 8/09/04 → 10/09/04 |