In situ growth and coalescence of He-filled bi-dimensional defects in Si by H supply

M. Vallet, J. F. Barbot, E. Oliviero, S. E. Donnelly, J. A. Hinks, M. F. Beaufort

Research output: Contribution to journalArticle

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Abstract

In this work, ion implantations with in situ transmission electron microscopy observations followed by different rates of temperature ramp were performed in (001)-Si to follow the evolution of He-plates under the influence of hydrogen. The JANNUS and MIAMI facilities were used to study the first stages of growth as well as the interactions between co-planar plates. Results showed that under a limited amount of H, the growth of He-plates resulting from a subcritical stress-corrosion mechanism can be fully described by the kinetic model of Johnson-Mehl-Avrami-Kolmogorov with effective activation energy of 0.9eV. Elastic calculations showed that the sudden and non-isotropic coalescence of close He-plates occurs when the out-of-plane tensile stress between them is close to the yield strength of silicon. After hydrogen absorption, surface minimization of final structure occurs.

LanguageEnglish
Article number223515
JournalJournal of Applied Physics
Volume115
Issue number22
DOIs
Publication statusPublished - 14 Jun 2014

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coalescing
defects
stress corrosion
plane stress
hydrogen
yield strength
ramps
tensile stress
ion implantation
activation energy
transmission electron microscopy
optimization
kinetics
silicon
interactions
temperature

Cite this

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title = "In situ growth and coalescence of He-filled bi-dimensional defects in Si by H supply",
abstract = "In this work, ion implantations with in situ transmission electron microscopy observations followed by different rates of temperature ramp were performed in (001)-Si to follow the evolution of He-plates under the influence of hydrogen. The JANNUS and MIAMI facilities were used to study the first stages of growth as well as the interactions between co-planar plates. Results showed that under a limited amount of H, the growth of He-plates resulting from a subcritical stress-corrosion mechanism can be fully described by the kinetic model of Johnson-Mehl-Avrami-Kolmogorov with effective activation energy of 0.9eV. Elastic calculations showed that the sudden and non-isotropic coalescence of close He-plates occurs when the out-of-plane tensile stress between them is close to the yield strength of silicon. After hydrogen absorption, surface minimization of final structure occurs.",
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In situ growth and coalescence of He-filled bi-dimensional defects in Si by H supply. / Vallet, M.; Barbot, J. F.; Oliviero, E.; Donnelly, S. E.; Hinks, J. A.; Beaufort, M. F.

In: Journal of Applied Physics, Vol. 115, No. 22, 223515, 14.06.2014.

Research output: Contribution to journalArticle

TY - JOUR

T1 - In situ growth and coalescence of He-filled bi-dimensional defects in Si by H supply

AU - Vallet, M.

AU - Barbot, J. F.

AU - Oliviero, E.

AU - Donnelly, S. E.

AU - Hinks, J. A.

AU - Beaufort, M. F.

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