In situ growth and coalescence of He-filled bi-dimensional defects in Si by H supply

M. Vallet; J. F. Barbot; E. Oliviero; S. E. Donnelly; J. A. Hinks; M. F. Beaufort

doi:10.1063/1.4883766

In situ growth and coalescence of He-filled bi-dimensional defects in Si by H supply

M. Vallet, J. F. Barbot, E. Oliviero, S. E. Donnelly, J. A. Hinks, M. F. Beaufort

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Abstract

In this work, ion implantations with in situ transmission electron microscopy observations followed by different rates of temperature ramp were performed in (001)-Si to follow the evolution of He-plates under the influence of hydrogen. The JANNUS and MIAMI facilities were used to study the first stages of growth as well as the interactions between co-planar plates. Results showed that under a limited amount of H, the growth of He-plates resulting from a subcritical stress-corrosion mechanism can be fully described by the kinetic model of Johnson-Mehl-Avrami-Kolmogorov with effective activation energy of 0.9eV. Elastic calculations showed that the sudden and non-isotropic coalescence of close He-plates occurs when the out-of-plane tensile stress between them is close to the yield strength of silicon. After hydrogen absorption, surface minimization of final structure occurs.

Original language	English
Article number	223515
Journal	Journal of Applied Physics
Volume	115
Issue number	22
Early online date	13 Jun 2014
DOIs	https://doi.org/10.1063/1.4883766
Publication status	Published - 14 Jun 2014

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title = "In situ growth and coalescence of He-filled bi-dimensional defects in Si by H supply",

abstract = "In this work, ion implantations with in situ transmission electron microscopy observations followed by different rates of temperature ramp were performed in (001)-Si to follow the evolution of He-plates under the influence of hydrogen. The JANNUS and MIAMI facilities were used to study the first stages of growth as well as the interactions between co-planar plates. Results showed that under a limited amount of H, the growth of He-plates resulting from a subcritical stress-corrosion mechanism can be fully described by the kinetic model of Johnson-Mehl-Avrami-Kolmogorov with effective activation energy of 0.9eV. Elastic calculations showed that the sudden and non-isotropic coalescence of close He-plates occurs when the out-of-plane tensile stress between them is close to the yield strength of silicon. After hydrogen absorption, surface minimization of final structure occurs.",

keywords = "Hydrogen, In situ processing, Ion implantation, Silicon, Transmission electron microscopy",

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T1 - In situ growth and coalescence of He-filled bi-dimensional defects in Si by H supply

AU - Vallet, M.

AU - Barbot, J. F.

AU - Oliviero, E.

AU - Donnelly, S. E.

AU - Hinks, J. A.

AU - Beaufort, M. F.

PY - 2014/6/14

Y1 - 2014/6/14

N2 - In this work, ion implantations with in situ transmission electron microscopy observations followed by different rates of temperature ramp were performed in (001)-Si to follow the evolution of He-plates under the influence of hydrogen. The JANNUS and MIAMI facilities were used to study the first stages of growth as well as the interactions between co-planar plates. Results showed that under a limited amount of H, the growth of He-plates resulting from a subcritical stress-corrosion mechanism can be fully described by the kinetic model of Johnson-Mehl-Avrami-Kolmogorov with effective activation energy of 0.9eV. Elastic calculations showed that the sudden and non-isotropic coalescence of close He-plates occurs when the out-of-plane tensile stress between them is close to the yield strength of silicon. After hydrogen absorption, surface minimization of final structure occurs.

AB - In this work, ion implantations with in situ transmission electron microscopy observations followed by different rates of temperature ramp were performed in (001)-Si to follow the evolution of He-plates under the influence of hydrogen. The JANNUS and MIAMI facilities were used to study the first stages of growth as well as the interactions between co-planar plates. Results showed that under a limited amount of H, the growth of He-plates resulting from a subcritical stress-corrosion mechanism can be fully described by the kinetic model of Johnson-Mehl-Avrami-Kolmogorov with effective activation energy of 0.9eV. Elastic calculations showed that the sudden and non-isotropic coalescence of close He-plates occurs when the out-of-plane tensile stress between them is close to the yield strength of silicon. After hydrogen absorption, surface minimization of final structure occurs.

KW - Hydrogen

KW - In situ processing

KW - Ion implantation

KW - Silicon

KW - Transmission electron microscopy

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JF - Journal of Applied Physics

SN - 0021-8979

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M1 - 223515

ER -

In situ growth and coalescence of He-filled bi-dimensional defects in Si by H supply

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