In situ growth and coalescence of He-filled bi-dimensional defects in Si by H supply

M. Vallet, J. F. Barbot, E. Oliviero, S. E. Donnelly, J. A. Hinks, M. F. Beaufort

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2 Citations (Scopus)


In this work, ion implantations with in situ transmission electron microscopy observations followed by different rates of temperature ramp were performed in (001)-Si to follow the evolution of He-plates under the influence of hydrogen. The JANNUS and MIAMI facilities were used to study the first stages of growth as well as the interactions between co-planar plates. Results showed that under a limited amount of H, the growth of He-plates resulting from a subcritical stress-corrosion mechanism can be fully described by the kinetic model of Johnson-Mehl-Avrami-Kolmogorov with effective activation energy of 0.9eV. Elastic calculations showed that the sudden and non-isotropic coalescence of close He-plates occurs when the out-of-plane tensile stress between them is close to the yield strength of silicon. After hydrogen absorption, surface minimization of final structure occurs.

Original languageEnglish
Article number223515
JournalJournal of Applied Physics
Issue number22
Early online date13 Jun 2014
Publication statusPublished - 14 Jun 2014


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