In-situ observation of atomic processes in Xe nanocrystals embedded in Al

K. Mitsuishi; M. Song; K. Furuya; R. C. Birtcher; C. W. Allen; S. E. Donnelly

doi:10.1557/PROC-504-417

In-situ observation of atomic processes in Xe nanocrystals embedded in Al

K. Mitsuishi, M. Song, K. Furuya, R. C. Birtcher, C. W. Allen, S. E. Donnelly

Research output: Contribution to journal › Conference article › peer-review

11 Citations (Scopus)

Abstract

Self-organization processes in Xe nanocrystals embedded in Al are observed with in-situ high-resolution electron microscopy. Under electron irradiation, stacking fault type defects are produced in Xe nanocrystals. The defects recover in a layer by layer manner. Detailed analysis of the video reveals that the displacement of Xe atoms in the stacking fault was rather small for the Xe atoms at boundary between Xe and Al, suggesting the possibility of the stacking fault in Xe precipitate originating inside of precipitate, not at the Al/Xe interface.

Original language	English
Pages (from-to)	417-422
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	504
DOIs	https://doi.org/10.1557/PROC-504-417
Publication status	Published - 1 Dec 1997
Externally published	Yes
Event	MRS Fall Symposium: Symposium KK – Atomistic Mechanisms in Beam Synthesis & Irradiation - Boston, United States Duration: 1 Dec 1997 → 2 Dec 1997 https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/volume/F0A1FE37FDBE54E4EEBECA82EB4654B9

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title = "In-situ observation of atomic processes in Xe nanocrystals embedded in Al",

abstract = "Self-organization processes in Xe nanocrystals embedded in Al are observed with in-situ high-resolution electron microscopy. Under electron irradiation, stacking fault type defects are produced in Xe nanocrystals. The defects recover in a layer by layer manner. Detailed analysis of the video reveals that the displacement of Xe atoms in the stacking fault was rather small for the Xe atoms at boundary between Xe and Al, suggesting the possibility of the stacking fault in Xe precipitate originating inside of precipitate, not at the Al/Xe interface.",

keywords = "Aluminum, Electron irradiation, High resolution electron microscopy, In situ processing, Nanostructured materials, Precipitation (chemical), Stacking faults",

author = "K. Mitsuishi and M. Song and K. Furuya and Birtcher, {R. C.} and Allen, {C. W.} and Donnelly, {S. E.}",

year = "1997",

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publisher = "Materials Research Society",

note = "MRS Fall Symposium : Symposium KK – Atomistic Mechanisms in Beam Synthesis & Irradiation ; Conference date: 01-12-1997 Through 02-12-1997",

url = "https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/volume/F0A1FE37FDBE54E4EEBECA82EB4654B9",

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TY - JOUR

T1 - In-situ observation of atomic processes in Xe nanocrystals embedded in Al

AU - Mitsuishi, K.

AU - Song, M.

AU - Furuya, K.

AU - Birtcher, R. C.

AU - Allen, C. W.

AU - Donnelly, S. E.

PY - 1997/12/1

Y1 - 1997/12/1

N2 - Self-organization processes in Xe nanocrystals embedded in Al are observed with in-situ high-resolution electron microscopy. Under electron irradiation, stacking fault type defects are produced in Xe nanocrystals. The defects recover in a layer by layer manner. Detailed analysis of the video reveals that the displacement of Xe atoms in the stacking fault was rather small for the Xe atoms at boundary between Xe and Al, suggesting the possibility of the stacking fault in Xe precipitate originating inside of precipitate, not at the Al/Xe interface.

AB - Self-organization processes in Xe nanocrystals embedded in Al are observed with in-situ high-resolution electron microscopy. Under electron irradiation, stacking fault type defects are produced in Xe nanocrystals. The defects recover in a layer by layer manner. Detailed analysis of the video reveals that the displacement of Xe atoms in the stacking fault was rather small for the Xe atoms at boundary between Xe and Al, suggesting the possibility of the stacking fault in Xe precipitate originating inside of precipitate, not at the Al/Xe interface.

KW - Aluminum

KW - Electron irradiation

KW - High resolution electron microscopy

KW - In situ processing

KW - Nanostructured materials

KW - Precipitation (chemical)

KW - Stacking faults

UR - http://www.scopus.com/inward/record.url?scp=0032687911&partnerID=8YFLogxK

U2 - 10.1557/PROC-504-417

DO - 10.1557/PROC-504-417

M3 - Conference article

AN - SCOPUS:0032687911

VL - 504

SP - 417

EP - 422

JO - MRS Online Proceedings Library

JF - MRS Online Proceedings Library

SN - 0272-9172

T2 - MRS Fall Symposium

Y2 - 1 December 1997 through 2 December 1997

ER -

In-situ observation of atomic processes in Xe nanocrystals embedded in Al

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