In-situ observation of atomic processes in Xe nanocrystals embedded in Al

K. Mitsuishi, M. Song, K. Furuya, R. C. Birtcher, C. W. Allen, S. E. Donnelly

Research output: Contribution to journalConference articlepeer-review

11 Citations (Scopus)

Abstract

Self-organization processes in Xe nanocrystals embedded in Al are observed with in-situ high-resolution electron microscopy. Under electron irradiation, stacking fault type defects are produced in Xe nanocrystals. The defects recover in a layer by layer manner. Detailed analysis of the video reveals that the displacement of Xe atoms in the stacking fault was rather small for the Xe atoms at boundary between Xe and Al, suggesting the possibility of the stacking fault in Xe precipitate originating inside of precipitate, not at the Al/Xe interface.

Original languageEnglish
Pages (from-to)417-422
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume504
DOIs
Publication statusPublished - 1 Dec 1997
Externally publishedYes
EventMRS Fall Symposium: Symposium KK – Atomistic Mechanisms in Beam Synthesis & Irradiation - Boston, United States
Duration: 1 Dec 19972 Dec 1997
https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/volume/F0A1FE37FDBE54E4EEBECA82EB4654B9

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