In situ observation of microstructure evolution in 4H-SiC under 3.5 keV He+ irradiation

Qiang Shen, Guang Ran, Jonathan Hinks, Stephen E. Donnelly, Lumin Wang, Ning Li

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

4H-SiC was irradiated with 3.5 keV He+ ions using the MIAMI facility at University of Huddersfield. The evolution of microstructure and gas bubbles during the irradiation at 700°C, 800°C and 900°C was observed by in situ transmission electron microscopy. Under irradiation, isolated bubbles and bubble discs formed in the SiC matrix. Bubble discs lying on {0001} and {10-10} crystal planes were beginning to form at ion fluence above 2.3 × 1020 He+/m2 at 700°C. The density of bubble discs increased with increasing irradiation fluence. However, growth rates were different at different of the implantation periods and temperature holding periods. The nucleation and growth of the bubble discs were attributed to be coalescence of the adjacent He vacancies and combination of loop punching and trap mutation, respectively.

LanguageEnglish
Pages149-153
Number of pages5
JournalJournal of Nuclear Materials
Volume471
Early online date21 Jan 2016
DOIs
Publication statusPublished - 1 Apr 2016

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bubbles
Irradiation
microstructure
Microstructure
irradiation
Ions
Punching
Coalescence
Vacancies
fluence
Nucleation
Gases
Transmission electron microscopy
Crystals
mutations
coalescing
implantation
ions
traps
nucleation

Cite this

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title = "In situ observation of microstructure evolution in 4H-SiC under 3.5 keV He+ irradiation",
abstract = "4H-SiC was irradiated with 3.5 keV He+ ions using the MIAMI facility at University of Huddersfield. The evolution of microstructure and gas bubbles during the irradiation at 700°C, 800°C and 900°C was observed by in situ transmission electron microscopy. Under irradiation, isolated bubbles and bubble discs formed in the SiC matrix. Bubble discs lying on {0001} and {10-10} crystal planes were beginning to form at ion fluence above 2.3 × 1020 He+/m2 at 700°C. The density of bubble discs increased with increasing irradiation fluence. However, growth rates were different at different of the implantation periods and temperature holding periods. The nucleation and growth of the bubble discs were attributed to be coalescence of the adjacent He vacancies and combination of loop punching and trap mutation, respectively.",
keywords = "Bubble disc, In situ irradiation, In situ TEM, Microstructure, SiC",
author = "Qiang Shen and Guang Ran and Jonathan Hinks and Donnelly, {Stephen E.} and Lumin Wang and Ning Li",
note = "Accepted 19 Jan 2016. HN 18/10/2017",
year = "2016",
month = "4",
day = "1",
doi = "10.1016/j.jnucmat.2016.01.017",
language = "English",
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pages = "149--153",
journal = "Journal of Nuclear Materials",
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In situ observation of microstructure evolution in 4H-SiC under 3.5 keV He+ irradiation. / Shen, Qiang; Ran, Guang; Hinks, Jonathan; Donnelly, Stephen E.; Wang, Lumin; Li, Ning.

In: Journal of Nuclear Materials, Vol. 471, 01.04.2016, p. 149-153.

Research output: Contribution to journalArticle

TY - JOUR

T1 - In situ observation of microstructure evolution in 4H-SiC under 3.5 keV He+ irradiation

AU - Shen, Qiang

AU - Ran, Guang

AU - Hinks, Jonathan

AU - Donnelly, Stephen E.

AU - Wang, Lumin

AU - Li, Ning

N1 - Accepted 19 Jan 2016. HN 18/10/2017

PY - 2016/4/1

Y1 - 2016/4/1

N2 - 4H-SiC was irradiated with 3.5 keV He+ ions using the MIAMI facility at University of Huddersfield. The evolution of microstructure and gas bubbles during the irradiation at 700°C, 800°C and 900°C was observed by in situ transmission electron microscopy. Under irradiation, isolated bubbles and bubble discs formed in the SiC matrix. Bubble discs lying on {0001} and {10-10} crystal planes were beginning to form at ion fluence above 2.3 × 1020 He+/m2 at 700°C. The density of bubble discs increased with increasing irradiation fluence. However, growth rates were different at different of the implantation periods and temperature holding periods. The nucleation and growth of the bubble discs were attributed to be coalescence of the adjacent He vacancies and combination of loop punching and trap mutation, respectively.

AB - 4H-SiC was irradiated with 3.5 keV He+ ions using the MIAMI facility at University of Huddersfield. The evolution of microstructure and gas bubbles during the irradiation at 700°C, 800°C and 900°C was observed by in situ transmission electron microscopy. Under irradiation, isolated bubbles and bubble discs formed in the SiC matrix. Bubble discs lying on {0001} and {10-10} crystal planes were beginning to form at ion fluence above 2.3 × 1020 He+/m2 at 700°C. The density of bubble discs increased with increasing irradiation fluence. However, growth rates were different at different of the implantation periods and temperature holding periods. The nucleation and growth of the bubble discs were attributed to be coalescence of the adjacent He vacancies and combination of loop punching and trap mutation, respectively.

KW - Bubble disc

KW - In situ irradiation

KW - In situ TEM

KW - Microstructure

KW - SiC

UR - http://www.sciencedirect.com/science/journal/00223115/471/supp/C?sdc=1

U2 - 10.1016/j.jnucmat.2016.01.017

DO - 10.1016/j.jnucmat.2016.01.017

M3 - Article

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SP - 149

EP - 153

JO - Journal of Nuclear Materials

T2 - Journal of Nuclear Materials

JF - Journal of Nuclear Materials

SN - 0022-3115

ER -