In situ transmission electron microscopy studies of radiation damage in copper indium diselenide

S. E. Donnelly; J. A. Hinks; P. D. Edmondson; R. D. Pilkington; M. Yakushev; R. C. Birtcher

doi:10.1016/j.nimb.2005.08.089

In situ transmission electron microscopy studies of radiation damage in copper indium diselenide

S. E. Donnelly, J. A. Hinks, P. D. Edmondson, R. D. Pilkington, M. Yakushev, R. C. Birtcher

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The ternary semiconductor, CuInSe₂ (CIS), is a promising semiconductor material for use in photovoltaic applications. Of particular interest is the high tolerance of this material to bombardment by energetic particles. This is of particular importance for photovoltaic applications in outer space where the lifetime of CIS-based solar cells has been found to be at least 50 times that of those based on amorphous silicon. In this paper we report on studies of the build-up of radiation damage in CIS during irradiation with Xe ions in the energy range 100-400 keV. Room temperature experiments indicate that dynamic annealing processes prevent the build-up of high levels of damage. However, for irradiation at a temperature of 50 K, the behaviour changes drastically with the material amorphising at low fluences. This effect is discussed in terms of defect mobility.

Original language	English
Pages (from-to)	686-689
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	242
Issue number	1-2
Early online date	23 Sep 2005
DOIs	https://doi.org/10.1016/j.nimb.2005.08.089
Publication status	Published - 1 Jan 2006
Externally published	Yes

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Donnelly, S. E., Hinks, J. A., Edmondson, P. D., Pilkington, R. D., Yakushev, M., & Birtcher, R. C. (2006). In situ transmission electron microscopy studies of radiation damage in copper indium diselenide. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 242(1-2), 686-689. https://doi.org/10.1016/j.nimb.2005.08.089

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title = "In situ transmission electron microscopy studies of radiation damage in copper indium diselenide",

abstract = "The ternary semiconductor, CuInSe2 (CIS), is a promising semiconductor material for use in photovoltaic applications. Of particular interest is the high tolerance of this material to bombardment by energetic particles. This is of particular importance for photovoltaic applications in outer space where the lifetime of CIS-based solar cells has been found to be at least 50 times that of those based on amorphous silicon. In this paper we report on studies of the build-up of radiation damage in CIS during irradiation with Xe ions in the energy range 100-400 keV. Room temperature experiments indicate that dynamic annealing processes prevent the build-up of high levels of damage. However, for irradiation at a temperature of 50 K, the behaviour changes drastically with the material amorphising at low fluences. This effect is discussed in terms of defect mobility.",

keywords = "Amorphisation, Copper indium diselenide, Ion irradiation, TEM",

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Donnelly, SE, Hinks, JA, Edmondson, PD, Pilkington, RD, Yakushev, M & Birtcher, RC 2006, 'In situ transmission electron microscopy studies of radiation damage in copper indium diselenide', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 242, no. 1-2, pp. 686-689. https://doi.org/10.1016/j.nimb.2005.08.089

In situ transmission electron microscopy studies of radiation damage in copper indium diselenide. / Donnelly, S. E.; Hinks, J. A.; Edmondson, P. D. et al.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 242, No. 1-2, 01.01.2006, p. 686-689.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - In situ transmission electron microscopy studies of radiation damage in copper indium diselenide

AU - Donnelly, S. E.

AU - Hinks, J. A.

AU - Edmondson, P. D.

AU - Pilkington, R. D.

AU - Yakushev, M.

AU - Birtcher, R. C.

PY - 2006/1/1

Y1 - 2006/1/1

N2 - The ternary semiconductor, CuInSe2 (CIS), is a promising semiconductor material for use in photovoltaic applications. Of particular interest is the high tolerance of this material to bombardment by energetic particles. This is of particular importance for photovoltaic applications in outer space where the lifetime of CIS-based solar cells has been found to be at least 50 times that of those based on amorphous silicon. In this paper we report on studies of the build-up of radiation damage in CIS during irradiation with Xe ions in the energy range 100-400 keV. Room temperature experiments indicate that dynamic annealing processes prevent the build-up of high levels of damage. However, for irradiation at a temperature of 50 K, the behaviour changes drastically with the material amorphising at low fluences. This effect is discussed in terms of defect mobility.

AB - The ternary semiconductor, CuInSe2 (CIS), is a promising semiconductor material for use in photovoltaic applications. Of particular interest is the high tolerance of this material to bombardment by energetic particles. This is of particular importance for photovoltaic applications in outer space where the lifetime of CIS-based solar cells has been found to be at least 50 times that of those based on amorphous silicon. In this paper we report on studies of the build-up of radiation damage in CIS during irradiation with Xe ions in the energy range 100-400 keV. Room temperature experiments indicate that dynamic annealing processes prevent the build-up of high levels of damage. However, for irradiation at a temperature of 50 K, the behaviour changes drastically with the material amorphising at low fluences. This effect is discussed in terms of defect mobility.

KW - Amorphisation

KW - Copper indium diselenide

KW - Ion irradiation

KW - TEM

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

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SN - 0168-583X

IS - 1-2

ER -

In situ transmission electron microscopy studies of radiation damage in copper indium diselenide

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