In situ transmission electron microscopy studies of radiation damage in copper indium diselenide

S. E. Donnelly, J. A. Hinks, P. D. Edmondson, R. D. Pilkington, M. Yakushev, R. C. Birtcher

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The ternary semiconductor, CuInSe2 (CIS), is a promising semiconductor material for use in photovoltaic applications. Of particular interest is the high tolerance of this material to bombardment by energetic particles. This is of particular importance for photovoltaic applications in outer space where the lifetime of CIS-based solar cells has been found to be at least 50 times that of those based on amorphous silicon. In this paper we report on studies of the build-up of radiation damage in CIS during irradiation with Xe ions in the energy range 100-400 keV. Room temperature experiments indicate that dynamic annealing processes prevent the build-up of high levels of damage. However, for irradiation at a temperature of 50 K, the behaviour changes drastically with the material amorphising at low fluences. This effect is discussed in terms of defect mobility.

Original languageEnglish
Pages (from-to)686-689
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume242
Issue number1-2
Early online date23 Sep 2005
DOIs
Publication statusPublished - 1 Jan 2006
Externally publishedYes

Fingerprint

Radiation damage
radiation damage
Indium
indium
Irradiation
Semiconductor materials
Transmission electron microscopy
Copper
copper
transmission electron microscopy
irradiation
energetic particles
Amorphous silicon
amorphous silicon
bombardment
Solar cells
fluence
solar cells
Annealing
damage

Cite this

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abstract = "The ternary semiconductor, CuInSe2 (CIS), is a promising semiconductor material for use in photovoltaic applications. Of particular interest is the high tolerance of this material to bombardment by energetic particles. This is of particular importance for photovoltaic applications in outer space where the lifetime of CIS-based solar cells has been found to be at least 50 times that of those based on amorphous silicon. In this paper we report on studies of the build-up of radiation damage in CIS during irradiation with Xe ions in the energy range 100-400 keV. Room temperature experiments indicate that dynamic annealing processes prevent the build-up of high levels of damage. However, for irradiation at a temperature of 50 K, the behaviour changes drastically with the material amorphising at low fluences. This effect is discussed in terms of defect mobility.",
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In situ transmission electron microscopy studies of radiation damage in copper indium diselenide. / Donnelly, S. E.; Hinks, J. A.; Edmondson, P. D.; Pilkington, R. D.; Yakushev, M.; Birtcher, R. C.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 242, No. 1-2, 01.01.2006, p. 686-689.

Research output: Contribution to journalArticle

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AU - Donnelly, S. E.

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AU - Edmondson, P. D.

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AB - The ternary semiconductor, CuInSe2 (CIS), is a promising semiconductor material for use in photovoltaic applications. Of particular interest is the high tolerance of this material to bombardment by energetic particles. This is of particular importance for photovoltaic applications in outer space where the lifetime of CIS-based solar cells has been found to be at least 50 times that of those based on amorphous silicon. In this paper we report on studies of the build-up of radiation damage in CIS during irradiation with Xe ions in the energy range 100-400 keV. Room temperature experiments indicate that dynamic annealing processes prevent the build-up of high levels of damage. However, for irradiation at a temperature of 50 K, the behaviour changes drastically with the material amorphising at low fluences. This effect is discussed in terms of defect mobility.

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