Incorporation of helium-implant-induced cavities near the active regions of metal-oxide-semiconductor devices

Effects on dc electrical characteristics

J. Terry, L. I. Haworth, A. M. Gundlach, J. T.M. Stevenson, V. M. Vishnyakov, S. E. Donnelly

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

Cavities, formed by helium implantation and subsequent annealing, have proved to be effective at trapping metal impurities within silicon. This has led to interest in their use as proximity gettering sites. In this investigation, cavity populations were formed by helium implants of energy 40 keV and dose 5×1016 cm−2 followed by annealing at 900 °C. This regime produces cavities with a mean void radius of 20 μm, located between 100 and 350 nm below the silicon surface. The effect of the presence of such cavities near the active areas of 1.2 μm p-type metal–oxide–semiconductor field-effect transistor devices is described. Electrical characterization of wafers, which have been implanted with helium on the front or rear silicon surface, has been carried out to determine whether the inclusion of void populations near the active regions of silicon devices is detrimental. These measurements found no evidence of any detrimental effect on the performance of working devices.

Original languageEnglish
Pages (from-to)306-310
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
DOIs
Publication statusPublished - 1 Jan 2002
Externally publishedYes
Event6th International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors - Napa Valley, United States
Duration: 22 Apr 200126 Apr 2001
Conference number: 6

Fingerprint

MOS devices
semiconductor devices
metal oxide semiconductors
Helium
helium
Silicon
cavities
voids
silicon
Annealing
Impurities
proximity
implantation
trapping
wafers
inclusions
Metals
impurities
dosage
annealing

Cite this

@article{3c6f5c6303324a40a3d85f2f1910209c,
title = "Incorporation of helium-implant-induced cavities near the active regions of metal-oxide-semiconductor devices: Effects on dc electrical characteristics",
abstract = "Cavities, formed by helium implantation and subsequent annealing, have proved to be effective at trapping metal impurities within silicon. This has led to interest in their use as proximity gettering sites. In this investigation, cavity populations were formed by helium implants of energy 40 keV and dose 5×1016 cm−2 followed by annealing at 900 °C. This regime produces cavities with a mean void radius of 20 μm, located between 100 and 350 nm below the silicon surface. The effect of the presence of such cavities near the active areas of 1.2 μm p-type metal–oxide–semiconductor field-effect transistor devices is described. Electrical characterization of wafers, which have been implanted with helium on the front or rear silicon surface, has been carried out to determine whether the inclusion of void populations near the active regions of silicon devices is detrimental. These measurements found no evidence of any detrimental effect on the performance of working devices.",
author = "J. Terry and Haworth, {L. I.} and Gundlach, {A. M.} and Stevenson, {J. T.M.} and Vishnyakov, {V. M.} and Donnelly, {S. E.}",
year = "2002",
month = "1",
day = "1",
doi = "10.1116/1.1445163",
language = "English",
volume = "20",
pages = "306--310",
journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",

}

TY - JOUR

T1 - Incorporation of helium-implant-induced cavities near the active regions of metal-oxide-semiconductor devices

T2 - Effects on dc electrical characteristics

AU - Terry, J.

AU - Haworth, L. I.

AU - Gundlach, A. M.

AU - Stevenson, J. T.M.

AU - Vishnyakov, V. M.

AU - Donnelly, S. E.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Cavities, formed by helium implantation and subsequent annealing, have proved to be effective at trapping metal impurities within silicon. This has led to interest in their use as proximity gettering sites. In this investigation, cavity populations were formed by helium implants of energy 40 keV and dose 5×1016 cm−2 followed by annealing at 900 °C. This regime produces cavities with a mean void radius of 20 μm, located between 100 and 350 nm below the silicon surface. The effect of the presence of such cavities near the active areas of 1.2 μm p-type metal–oxide–semiconductor field-effect transistor devices is described. Electrical characterization of wafers, which have been implanted with helium on the front or rear silicon surface, has been carried out to determine whether the inclusion of void populations near the active regions of silicon devices is detrimental. These measurements found no evidence of any detrimental effect on the performance of working devices.

AB - Cavities, formed by helium implantation and subsequent annealing, have proved to be effective at trapping metal impurities within silicon. This has led to interest in their use as proximity gettering sites. In this investigation, cavity populations were formed by helium implants of energy 40 keV and dose 5×1016 cm−2 followed by annealing at 900 °C. This regime produces cavities with a mean void radius of 20 μm, located between 100 and 350 nm below the silicon surface. The effect of the presence of such cavities near the active areas of 1.2 μm p-type metal–oxide–semiconductor field-effect transistor devices is described. Electrical characterization of wafers, which have been implanted with helium on the front or rear silicon surface, has been carried out to determine whether the inclusion of void populations near the active regions of silicon devices is detrimental. These measurements found no evidence of any detrimental effect on the performance of working devices.

UR - http://www.scopus.com/inward/record.url?scp=0036122648&partnerID=8YFLogxK

U2 - 10.1116/1.1445163

DO - 10.1116/1.1445163

M3 - Conference article

VL - 20

SP - 306

EP - 310

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

ER -