Incorporation of helium-implant-induced cavities near the active regions of metal-oxide-semiconductor devices: Effects on dc electrical characteristics

J. Terry, L. I. Haworth, A. M. Gundlach, J. T.M. Stevenson, V. M. Vishnyakov, S. E. Donnelly

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

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Physics & Astronomy

Engineering & Materials Science