Influence of doping density on electron dynamics in GaAs/AlGaAs quantum cascade lasers

V. D. Jovanović; S. Höfling; D. Indjin; N. Vukmirović; Z. Ikonić; P. Harrison; J. P. Reithmaier; A. Forchel

doi:10.1063/1.2194312

Influence of doping density on electron dynamics in GaAs/AlGaAs quantum cascade lasers

V. D. Jovanović, S. Höfling, D. Indjin, N. Vukmirović, Z. Ikonić, P. Harrison, J. P. Reithmaier, A. Forchel

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Abstract

A detailed theoretical and experimental study of the influence of injector doping on the output characteristics and electron heating in midinfrared GaAsAlGaAs quantum cascade lasers is presented. The employed theoretical model of electron transport was based on a fully nonequilibrium self-consistent Schrödinger-Poisson analysis of the scattering rate and energy balance equations. Three different devices with injector sheet doping densities in the range of (4-6.5) × 1011 cm-2 have been grown and experimentally characterized. Optimized arsenic fluxes were used for the growth, resulting in high-quality layers with smooth surfaces and low defect densities. A quasilinear increase of the threshold current with sheet injector doping has been observed both theoretically and experimentally. The experimental and calculated current-voltage characteristics are in a very good agreement. A decrease of the calculated coupling constant of average electron temperature versus the pumping current with doping level was found.

Original language	English
Article number	103106
Journal	Journal of Applied Physics
Volume	99
Issue number	10
DOIs	https://doi.org/10.1063/1.2194312
Publication status	Published - 15 May 2006
Externally published	Yes

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@article{79f8fd0305bf4521a93e202c26c0a155,

title = "Influence of doping density on electron dynamics in GaAs/AlGaAs quantum cascade lasers",

abstract = "A detailed theoretical and experimental study of the influence of injector doping on the output characteristics and electron heating in midinfrared GaAsAlGaAs quantum cascade lasers is presented. The employed theoretical model of electron transport was based on a fully nonequilibrium self-consistent Schr{\"o}dinger-Poisson analysis of the scattering rate and energy balance equations. Three different devices with injector sheet doping densities in the range of (4-6.5) × 1011 cm-2 have been grown and experimentally characterized. Optimized arsenic fluxes were used for the growth, resulting in high-quality layers with smooth surfaces and low defect densities. A quasilinear increase of the threshold current with sheet injector doping has been observed both theoretically and experimentally. The experimental and calculated current-voltage characteristics are in a very good agreement. A decrease of the calculated coupling constant of average electron temperature versus the pumping current with doping level was found.",

keywords = "Arsenic, Electron scattering, Electron transport properties, Electrons, Gallium compounds, Poisson equation",

author = "Jovanovi{\'c}, {V. D.} and S. H{\"o}fling and D. Indjin and N. Vukmirovi{\'c} and Z. Ikoni{\'c} and P. Harrison and Reithmaier, {J. P.} and A. Forchel",

note = "Funding Information: The authors would like to thank R. W. Kelsall, M. Giehler, and V. Spagnolo for useful discussions and M. Wagenbrenner and T. Demarczyk for expert technical assistance. Thanks go to J. Seufert of Nanoplus, Nanosystems and Technology GmbH for mounting the devices. The theoretical work in Leeds is partially supported by EPSRC(UK) and ORS(UK). Experimental work at Universit{\"a}t W{\"u}rzburg was partially supported by the German Federal Ministry of Education and Research (project “Quankas”).",

year = "2006",

month = may,

day = "15",

doi = "10.1063/1.2194312",

language = "English",

volume = "99",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Influence of doping density on electron dynamics in GaAs/AlGaAs quantum cascade lasers

AU - Jovanović, V. D.

AU - Höfling, S.

AU - Indjin, D.

AU - Vukmirović, N.

AU - Ikonić, Z.

AU - Harrison, P.

AU - Reithmaier, J. P.

AU - Forchel, A.

N1 - Funding Information: The authors would like to thank R. W. Kelsall, M. Giehler, and V. Spagnolo for useful discussions and M. Wagenbrenner and T. Demarczyk for expert technical assistance. Thanks go to J. Seufert of Nanoplus, Nanosystems and Technology GmbH for mounting the devices. The theoretical work in Leeds is partially supported by EPSRC(UK) and ORS(UK). Experimental work at Universität Würzburg was partially supported by the German Federal Ministry of Education and Research (project “Quankas”).

PY - 2006/5/15

Y1 - 2006/5/15

N2 - A detailed theoretical and experimental study of the influence of injector doping on the output characteristics and electron heating in midinfrared GaAsAlGaAs quantum cascade lasers is presented. The employed theoretical model of electron transport was based on a fully nonequilibrium self-consistent Schrödinger-Poisson analysis of the scattering rate and energy balance equations. Three different devices with injector sheet doping densities in the range of (4-6.5) × 1011 cm-2 have been grown and experimentally characterized. Optimized arsenic fluxes were used for the growth, resulting in high-quality layers with smooth surfaces and low defect densities. A quasilinear increase of the threshold current with sheet injector doping has been observed both theoretically and experimentally. The experimental and calculated current-voltage characteristics are in a very good agreement. A decrease of the calculated coupling constant of average electron temperature versus the pumping current with doping level was found.

AB - A detailed theoretical and experimental study of the influence of injector doping on the output characteristics and electron heating in midinfrared GaAsAlGaAs quantum cascade lasers is presented. The employed theoretical model of electron transport was based on a fully nonequilibrium self-consistent Schrödinger-Poisson analysis of the scattering rate and energy balance equations. Three different devices with injector sheet doping densities in the range of (4-6.5) × 1011 cm-2 have been grown and experimentally characterized. Optimized arsenic fluxes were used for the growth, resulting in high-quality layers with smooth surfaces and low defect densities. A quasilinear increase of the threshold current with sheet injector doping has been observed both theoretically and experimentally. The experimental and calculated current-voltage characteristics are in a very good agreement. A decrease of the calculated coupling constant of average electron temperature versus the pumping current with doping level was found.

KW - Arsenic

KW - Electron scattering

KW - Electron transport properties

KW - Electrons

KW - Gallium compounds

KW - Poisson equation

UR - http://www.scopus.com/inward/record.url?scp=33744793245&partnerID=8YFLogxK

U2 - 10.1063/1.2194312

DO - 10.1063/1.2194312

M3 - Article

AN - SCOPUS:33744793245

VL - 99

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 10

M1 - 103106

ER -

Influence of doping density on electron dynamics in GaAs/AlGaAs quantum cascade lasers

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