Influence of injector doping density and electron confinement on the properties of GaAs/Al0.45Ga0.55As quantum cascade lasers

S. Höfling; D. Indjin; V. D. Jovanovié; A. Mirčetić; J. P. Reithmaier; Z. Forchel; A. Ikonić; N. Vukmirović; P. Harrison; V. Milanović

doi:10.1002/pssc.200564160

Influence of injector doping density and electron confinement on the properties of GaAs/Al_0.45Ga_0.55As quantum cascade lasers

S. Höfling, D. Indjin, V. D. Jovanovié, A. Mirčetić, J. P. Reithmaier, Z. Forchel, A. Ikonić, N. Vukmirović, P. Harrison, V. Milanović

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

We report on a comparative study of GaAs/Al_0.45Ga _0.55As mid-infrared quantum cascade lasers. Devices differ in the mechanisms for depopulating the lower laser level. The depopulation mechanisms rely on longitudinal optical (LO) phonon emission into a single subband, into two subbands or into a set of subbands forming a miniband. The influence of injector doping density and electron confinement on device characteristics is explored experimentally and theoretically. The mechanisms limiting high temperature operation and the dynamic range are investigated.

Original language	English
Pages (from-to)	411-414
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Volume	3
Issue number	3
Early online date	21 Feb 2006
DOIs	https://doi.org/10.1002/pssc.200564160
Publication status	Published - 1 Mar 2006
Externally published	Yes
Event	32nd International Symposium on Compound Semiconductors - Rust, Germany Duration: 18 Sep 2005 → 22 Sep 2005 Conference number: 32

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Höfling, S., Indjin, D., Jovanovié, V. D., Mirčetić, A., Reithmaier, J. P., Forchel, Z., Ikonić, A., Vukmirović, N., Harrison, P., & Milanović, V. (2006). Influence of injector doping density and electron confinement on the properties of GaAs/Al_0.45Ga_0.55As quantum cascade lasers. Physica Status Solidi C: Conferences, 3(3), 411-414. https://doi.org/10.1002/pssc.200564160

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title = "Influence of injector doping density and electron confinement on the properties of GaAs/Al0.45Ga0.55As quantum cascade lasers",

abstract = "We report on a comparative study of GaAs/Al0.45Ga 0.55As mid-infrared quantum cascade lasers. Devices differ in the mechanisms for depopulating the lower laser level. The depopulation mechanisms rely on longitudinal optical (LO) phonon emission into a single subband, into two subbands or into a set of subbands forming a miniband. The influence of injector doping density and electron confinement on device characteristics is explored experimentally and theoretically. The mechanisms limiting high temperature operation and the dynamic range are investigated.",

keywords = "42.55.Px, 71.55.Eq, 85.60.Bt, Electromagnetic wave emission, Electron transitions, Infrared lamps",

author = "S. H{\"o}fling and D. Indjin and Jovanovi{\'e}, {V. D.} and A. Mir{\v c}eti{\'c} and Reithmaier, {J. P.} and Z. Forchel and A. Ikoni{\'c} and N. Vukmirovi{\'c} and P. Harrison and V. Milanovi{\'c}",

year = "2006",

month = mar,

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doi = "10.1002/pssc.200564160",

language = "English",

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pages = "411--414",

journal = "Physica Status Solidi C: Conferences",

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note = "32nd International Symposium on Compound Semiconductors, ISCS-2005 ; Conference date: 18-09-2005 Through 22-09-2005",

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Höfling, S, Indjin, D, Jovanovié, VD, Mirčetić, A, Reithmaier, JP, Forchel, Z, Ikonić, A, Vukmirović, N, Harrison, P & Milanović, V 2006, 'Influence of injector doping density and electron confinement on the properties of GaAs/Al_0.45Ga_0.55As quantum cascade lasers', Physica Status Solidi C: Conferences, vol. 3, no. 3, pp. 411-414. https://doi.org/10.1002/pssc.200564160

TY - JOUR

T1 - Influence of injector doping density and electron confinement on the properties of GaAs/Al0.45Ga0.55As quantum cascade lasers

AU - Höfling, S.

AU - Indjin, D.

AU - Jovanovié, V. D.

AU - Mirčetić, A.

AU - Reithmaier, J. P.

AU - Forchel, Z.

AU - Ikonić, A.

AU - Vukmirović, N.

AU - Harrison, P.

AU - Milanović, V.

N1 - Conference code: 32

PY - 2006/3/1

Y1 - 2006/3/1

N2 - We report on a comparative study of GaAs/Al0.45Ga 0.55As mid-infrared quantum cascade lasers. Devices differ in the mechanisms for depopulating the lower laser level. The depopulation mechanisms rely on longitudinal optical (LO) phonon emission into a single subband, into two subbands or into a set of subbands forming a miniband. The influence of injector doping density and electron confinement on device characteristics is explored experimentally and theoretically. The mechanisms limiting high temperature operation and the dynamic range are investigated.

AB - We report on a comparative study of GaAs/Al0.45Ga 0.55As mid-infrared quantum cascade lasers. Devices differ in the mechanisms for depopulating the lower laser level. The depopulation mechanisms rely on longitudinal optical (LO) phonon emission into a single subband, into two subbands or into a set of subbands forming a miniband. The influence of injector doping density and electron confinement on device characteristics is explored experimentally and theoretically. The mechanisms limiting high temperature operation and the dynamic range are investigated.

KW - 42.55.Px

KW - 71.55.Eq

KW - 85.60.Bt

KW - Electromagnetic wave emission

KW - Electron transitions

KW - Infrared lamps

UR - http://www.scopus.com/inward/record.url?scp=33646202560&partnerID=8YFLogxK

U2 - 10.1002/pssc.200564160

DO - 10.1002/pssc.200564160

M3 - Conference article

AN - SCOPUS:33646202560

VL - 3

SP - 411

EP - 414

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

IS - 3

T2 - 32nd International Symposium on Compound Semiconductors

Y2 - 18 September 2005 through 22 September 2005

ER -

Influence of injector doping density and electron confinement on the properties of GaAs/Al_0.45Ga_0.55As quantum cascade lasers

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