We report on a comparative study of GaAs/Al0.45Ga 0.55As mid-infrared quantum cascade lasers. Devices differ in the mechanisms for depopulating the lower laser level. The depopulation mechanisms rely on longitudinal optical (LO) phonon emission into a single subband, into two subbands or into a set of subbands forming a miniband. The influence of injector doping density and electron confinement on device characteristics is explored experimentally and theoretically. The mechanisms limiting high temperature operation and the dynamic range are investigated.
|Number of pages||4|
|Journal||Physica Status Solidi C: Conferences|
|Early online date||21 Feb 2006|
|Publication status||Published - 1 Mar 2006|
|Event||32nd International Symposium on Compound Semiconductors - Rust, Germany|
Duration: 18 Sep 2005 → 22 Sep 2005
Conference number: 32