Influence of preamorphization on the structural properties of ultrashallow arsenic implants in silicon

L. Capello, T. H. Metzger, M. Werner, J. A. Van Den Berg, M. Servidori, L. Ottaviano, C. Bongiorno, G. Mannino, T. Feudel, M. Herden, V. Holý

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3 Citations (Scopus)

Abstract

Continuous downscaling of complementary metal-oxide semiconductor devices requires the manufacture of highly doped ultrashallow junctions. A preamorphizing implant (PAI) is commonly used in industrial processing in order to avoid unfavorable profile broadening and channeling tails during dopant atom implant in the ultralow energy regime (<5 keV). In this work, we report about a detailed characterization of the structural changes induced by xenon PAI treatment on ultralow energy arsenic-implanted (001) silicon. Combined x-ray scattering methods, medium energy ion scattering, and transmission electron microscopy are applied to obtain as comprehensive picture as possible of the reordering processes occurring during the postimplantation annealing treatment. Evidence is found that end-of-range defects, present after implant below the amorphous-to-crystalline interface, transform from small Si interstitial clusters to dislocation loops during annealing depending on the implant conditions. Simultaneously, As atoms redistribute by moving to the substitutional sites of the freshly regrown Si lattice without inducing a local residual strain field. The remaining fraction of electrically inactive dopants cumulates in a subnanometer-thick layer beneath the surface oxide.

LanguageEnglish
Article number103533
JournalJournal of Applied Physics
Volume100
Issue number10
DOIs
Publication statusPublished - 15 Nov 2006
Externally publishedYes

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arsenic
silicon
annealing
ion scattering
x ray scattering
semiconductor devices
xenon
atoms
energy
CMOS
interstitials
transmission electron microscopy
oxides
defects
profiles

Cite this

Capello, L. ; Metzger, T. H. ; Werner, M. ; Van Den Berg, J. A. ; Servidori, M. ; Ottaviano, L. ; Bongiorno, C. ; Mannino, G. ; Feudel, T. ; Herden, M. ; Holý, V. / Influence of preamorphization on the structural properties of ultrashallow arsenic implants in silicon. In: Journal of Applied Physics. 2006 ; Vol. 100, No. 10.
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abstract = "Continuous downscaling of complementary metal-oxide semiconductor devices requires the manufacture of highly doped ultrashallow junctions. A preamorphizing implant (PAI) is commonly used in industrial processing in order to avoid unfavorable profile broadening and channeling tails during dopant atom implant in the ultralow energy regime (<5 keV). In this work, we report about a detailed characterization of the structural changes induced by xenon PAI treatment on ultralow energy arsenic-implanted (001) silicon. Combined x-ray scattering methods, medium energy ion scattering, and transmission electron microscopy are applied to obtain as comprehensive picture as possible of the reordering processes occurring during the postimplantation annealing treatment. Evidence is found that end-of-range defects, present after implant below the amorphous-to-crystalline interface, transform from small Si interstitial clusters to dislocation loops during annealing depending on the implant conditions. Simultaneously, As atoms redistribute by moving to the substitutional sites of the freshly regrown Si lattice without inducing a local residual strain field. The remaining fraction of electrically inactive dopants cumulates in a subnanometer-thick layer beneath the surface oxide.",
author = "L. Capello and Metzger, {T. H.} and M. Werner and {Van Den Berg}, {J. A.} and M. Servidori and L. Ottaviano and C. Bongiorno and G. Mannino and T. Feudel and M. Herden and V. Hol{\'y}",
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Capello, L, Metzger, TH, Werner, M, Van Den Berg, JA, Servidori, M, Ottaviano, L, Bongiorno, C, Mannino, G, Feudel, T, Herden, M & Holý, V 2006, 'Influence of preamorphization on the structural properties of ultrashallow arsenic implants in silicon', Journal of Applied Physics, vol. 100, no. 10, 103533. https://doi.org/10.1063/1.2363252

Influence of preamorphization on the structural properties of ultrashallow arsenic implants in silicon. / Capello, L.; Metzger, T. H.; Werner, M.; Van Den Berg, J. A.; Servidori, M.; Ottaviano, L.; Bongiorno, C.; Mannino, G.; Feudel, T.; Herden, M.; Holý, V.

In: Journal of Applied Physics, Vol. 100, No. 10, 103533, 15.11.2006.

Research output: Contribution to journalArticle

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AU - Capello, L.

AU - Metzger, T. H.

AU - Werner, M.

AU - Van Den Berg, J. A.

AU - Servidori, M.

AU - Ottaviano, L.

AU - Bongiorno, C.

AU - Mannino, G.

AU - Feudel, T.

AU - Herden, M.

AU - Holý, V.

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N2 - Continuous downscaling of complementary metal-oxide semiconductor devices requires the manufacture of highly doped ultrashallow junctions. A preamorphizing implant (PAI) is commonly used in industrial processing in order to avoid unfavorable profile broadening and channeling tails during dopant atom implant in the ultralow energy regime (<5 keV). In this work, we report about a detailed characterization of the structural changes induced by xenon PAI treatment on ultralow energy arsenic-implanted (001) silicon. Combined x-ray scattering methods, medium energy ion scattering, and transmission electron microscopy are applied to obtain as comprehensive picture as possible of the reordering processes occurring during the postimplantation annealing treatment. Evidence is found that end-of-range defects, present after implant below the amorphous-to-crystalline interface, transform from small Si interstitial clusters to dislocation loops during annealing depending on the implant conditions. Simultaneously, As atoms redistribute by moving to the substitutional sites of the freshly regrown Si lattice without inducing a local residual strain field. The remaining fraction of electrically inactive dopants cumulates in a subnanometer-thick layer beneath the surface oxide.

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