TY - JOUR
T1 - Influence of the active region design on output characteristics of GaAs/AlGaAs quantum cascade lasers in a strong magnetic field
AU - Radovanović, J.
AU - Mirčetić, A.
AU - Milanović, V.
AU - Ikonić, Z.
AU - Indjin, D.
AU - Harrison, P.
AU - Kelsall, R. W.
PY - 2006/3/1
Y1 - 2006/3/1
N2 - We describe the application of our computational model, developed for finding the optical gain in a mid-infrared quantum cascade laser subjected to a strong magnetic field, to two distinct λ ∼ 9 νm GaAs-based structures. The additional carrier confinement induced by the field alters the transition rates for the optical- and acoustic-phonon scattering processes from the upper laser level, thus affecting the laser output properties, in particular the optical gain. Within this model, the gain is found by solving the system of rate equations, from which the carrier densities in each level are calculated. Numerical results are presented for magnetic fields between 10 and 60 T, and the band nonparabolicity is taken into account.
AB - We describe the application of our computational model, developed for finding the optical gain in a mid-infrared quantum cascade laser subjected to a strong magnetic field, to two distinct λ ∼ 9 νm GaAs-based structures. The additional carrier confinement induced by the field alters the transition rates for the optical- and acoustic-phonon scattering processes from the upper laser level, thus affecting the laser output properties, in particular the optical gain. Within this model, the gain is found by solving the system of rate equations, from which the carrier densities in each level are calculated. Numerical results are presented for magnetic fields between 10 and 60 T, and the band nonparabolicity is taken into account.
KW - Carrier concentration
KW - Computation theory
KW - Magnetic field effects
KW - Phonons
KW - Quantum theory
KW - Semiconducting gallium compounds
UR - http://www.scopus.com/inward/record.url?scp=32844461159&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/21/3/001
DO - 10.1088/0268-1242/21/3/001
M3 - Article
AN - SCOPUS:32844461159
VL - 21
SP - 215
EP - 220
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 3
ER -