Interdiffusion effects and line broadening of hole intersubband absorption in complex GaAs/AlGaAs quantum well structures

Zoran Ikonić, Oana Malis, Loren N. Pfeiffer, Kenneth W. West, Paul Harrison

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Detailed modeling of intersubband absorption in p -doped GaAs quantum wells embedded in GaAs/AlAs superlattice barriers is performed. It is shown that a careful analysis of measurements provides valuable information on the structure details, like the extent of interdiffusion and different sources of line broadening, which can be useful for further design of emitters and detectors based on this and other material systems.

Original languageEnglish
Article number113107
JournalJournal of Applied Physics
Volume107
Issue number11
DOIs
Publication statusPublished - 1 Jun 2010
Externally publishedYes

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