Interface disorder and the inhomogeneous broadening of optical spectra in semiconductor, quantum wells

P. Harrison, T. Stirner, S. R. Bardorf, W. E. Hagston, S. Jackson, K. A. Dhese, J. H.C. Hogg, V. Hewer, J. E. Nicholls, M. O’Neill

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

The photoluminescence linewidth of a CdTe/Cd1-xMnxTe structure, grown by molecular beam epitaxy, containing quantum wells of width 26, 37 and 45Å separated by large (250Å) barriers, was investigated. The high quality of the quantum well structure was confirmed by X-ray topography, X-ray rocking curves and narrow photoluminescence lines. It is shown that these results are consistent with small scale interface roughness resulting from clusters involving pairs or triplets of Mn2+ ions forming into small islands.

Original languageEnglish
Pages (from-to)431-435
Number of pages5
JournalSuperlattices and Microstructures
Volume13
Issue number4
DOIs
Publication statusPublished - 1 Jun 1993
Externally publishedYes

Fingerprint

Dive into the research topics of 'Interface disorder and the inhomogeneous broadening of optical spectra in semiconductor, quantum wells'. Together they form a unique fingerprint.

Cite this