Interface phonons in asymmetric quantum well structures

P. Kinsler, R. W. Kelsall, P. Harrison

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


In semiconductor microstructures with many layers, the phonon modes change from their bulk form and split into 'confined LO phonons' (LC) and 'interface phonons' (IF), the number and variety of which depends on both the number of layers and the number of different materials in the structure. This affects the electron-phonon scattering rates. Because of the current interest in inter-subband THz emitters, we use these LC and IF modes to evaluate the inter-subband electron-phonon scattering rate in THz emitter prototypes that are based on four-subband stepped quantum wells. These scattering rates in turn affect the population inversion predicted for these devices, so we compare the predicted population inversions for the most promising prototypes against those obtained using bulk phonon scattering rates.

Original languageEnglish
Pages (from-to)163-166
Number of pages4
JournalSuperlattices and Microstructures
Issue number1-2
Publication statusPublished - 1 Jan 1999
Externally publishedYes


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