Abstract
The quantum cascade laser provides one possible method of realizing high efficiency light emitters in indirect band gap materials such as silicon. Electroluminescence results from Si/SiGe quantum cascade emitters are presented demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions. In surface-normal emission, only light-hole to heavy-hole electroluminescence is observed as predicted by theory. Intersubband emission is demonstrated at 2.9 THz (103 μm wavelength), 8.9 THz (33.7 μm), and 16.2 THz (18.5 μm) from the Si/SiGe quantum cascade heterostructures.
Original language | English |
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Pages (from-to) | 1543-1545 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 81 |
Issue number | 9 |
Early online date | 19 Aug 2002 |
DOIs | |
Publication status | Published - 26 Aug 2002 |
Externally published | Yes |