Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies

S. A. Lynch, R. Bates, D. J. Paul, D. J. Norris, A. G. Cullis, Z. Ikonic, R. W. Kelsall, P. Harrison, D. D. Arnone, C. R. Pidgeon

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139 Citations (Scopus)


The quantum cascade laser provides one possible method of realizing high efficiency light emitters in indirect band gap materials such as silicon. Electroluminescence results from Si/SiGe quantum cascade emitters are presented demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions. In surface-normal emission, only light-hole to heavy-hole electroluminescence is observed as predicted by theory. Intersubband emission is demonstrated at 2.9 THz (103 μm wavelength), 8.9 THz (33.7 μm), and 16.2 THz (18.5 μm) from the Si/SiGe quantum cascade heterostructures.

Original languageEnglish
Pages (from-to)1543-1545
Number of pages3
JournalApplied Physics Letters
Issue number9
Early online date19 Aug 2002
Publication statusPublished - 26 Aug 2002
Externally publishedYes


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