Abstract
The quantum cascade laser provides one possible method of realizing high efficiency light emitters in indirect band gap materials such as silicon. Electroluminescence results from Si/SiGe quantum cascade emitters are presented demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions. In surface-normal emission, only light-hole to heavy-hole electroluminescence is observed as predicted by theory. Intersubband emission is demonstrated at 2.9 THz (103 μm wavelength), 8.9 THz (33.7 μm), and 16.2 THz (18.5 μm) from the Si/SiGe quantum cascade heterostructures.
| Original language | English |
|---|---|
| Pages (from-to) | 1543-1545 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 81 |
| Issue number | 9 |
| Early online date | 19 Aug 2002 |
| DOIs | |
| Publication status | Published - 26 Aug 2002 |
| Externally published | Yes |