Intersubband hole-phonon and alloy disorder scattering in SiGe quantum wells

Z. Ikonić, P. Harrison, R. W. Kelsall

Research output: Contribution to journalArticlepeer-review

41 Citations (Scopus)


Using the 6 x 6 k·p method we calculate hole-phonon and alloy disorder scattering rates in SiGe quantum wells, and how these depend on the various parameters of the system. The relative importance of different branches of nonpolar optical and acoustic phonons is discussed, and a comparison is made with alloy scattering. The latter is found to be an important mechanism for intersubband hole relaxation, particularly for low-energy transitions at low temperatures, where it dominates over phonon scattering, while losing significance in the opposite case. The results are relevant for the design and operation of SiGe-based quantum cascade lasers relying on intersubband transitions in the valence band.

Original languageEnglish
Article number245311
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number24
Early online date29 Nov 2001
Publication statusPublished - 15 Dec 2001
Externally publishedYes


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