We report on the results of our simulations of Γ - X scattering in GaAs/AlGaAs heterostructures, discussing the importance of the mole fraction, doping density, and lattice and electron temperature in determining the scattering rates. We consider three systems, a single quantum well (for the investigation of Γ - X scattering), a double quantum well (to compare the Γ - X - G and Γ - T scattering rates), and an example of a GaAs/AlGaAs mid-infrared quantum cascade laser. Our simulations suggest that Γ - X scattering can be significant at room temperature but falls off rapidly at lower temperatures. One important factor determining the scattering rate is found to be the energy difference between the Γ- and X-states.
|Number of pages||12|
|Journal||Acta Physica Polonica A|
|Publication status||Published - 1 Mar 2008|
|Event||13th International Symposium on Ultrafast Phenomena in Semiconductors - Vilnius, Lithuania|
Duration: 26 Aug 2007 → 29 Aug 2007
Conference number: 13