Intervalley Scattering and the Role of Indirect Band Gap AlAs Barriers: Application to GaAs/AlGaAs Quantum Cascade Lasers

J. McTavish; Z. Ikonić; D. Indjin; P. Harrison

doi:10.12693/APhysPolA.113.891

Intervalley Scattering and the Role of Indirect Band Gap AlAs Barriers: Application to GaAs/AlGaAs Quantum Cascade Lasers

J. McTavish, Z. Ikonić, D. Indjin, P. Harrison

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

We report on the results of our simulations of Γ - X scattering in GaAs/AlGaAs heterostructures, discussing the importance of the mole fraction, doping density, and lattice and electron temperature in determining the scattering rates. We consider three systems, a single quantum well (for the investigation of Γ - X scattering), a double quantum well (to compare the Γ - X - G and Γ - T scattering rates), and an example of a GaAs/AlGaAs mid-infrared quantum cascade laser. Our simulations suggest that Γ - X scattering can be significant at room temperature but falls off rapidly at lower temperatures. One important factor determining the scattering rate is found to be the energy difference between the Γ- and X-states.

Original language	English
Pages (from-to)	891-902
Number of pages	12
Journal	Acta Physica Polonica A
Volume	113
Issue number	3
DOIs	https://doi.org/10.12693/APhysPolA.113.891
Publication status	Published - 1 Mar 2008
Externally published	Yes
Event	13th International Symposium on Ultrafast Phenomena in Semiconductors - Vilnius, Lithuania Duration: 26 Aug 2007 → 29 Aug 2007 Conference number: 13

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title = "Intervalley Scattering and the Role of Indirect Band Gap AlAs Barriers: Application to GaAs/AlGaAs Quantum Cascade Lasers",

abstract = "We report on the results of our simulations of Γ - X scattering in GaAs/AlGaAs heterostructures, discussing the importance of the mole fraction, doping density, and lattice and electron temperature in determining the scattering rates. We consider three systems, a single quantum well (for the investigation of Γ - X scattering), a double quantum well (to compare the Γ - X - G and Γ - T scattering rates), and an example of a GaAs/AlGaAs mid-infrared quantum cascade laser. Our simulations suggest that Γ - X scattering can be significant at room temperature but falls off rapidly at lower temperatures. One important factor determining the scattering rate is found to be the energy difference between the Γ- and X-states.",

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author = "J. McTavish and Z. Ikoni{\'c} and D. Indjin and P. Harrison",

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AU - Ikonić, Z.

AU - Indjin, D.

AU - Harrison, P.

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N2 - We report on the results of our simulations of Γ - X scattering in GaAs/AlGaAs heterostructures, discussing the importance of the mole fraction, doping density, and lattice and electron temperature in determining the scattering rates. We consider three systems, a single quantum well (for the investigation of Γ - X scattering), a double quantum well (to compare the Γ - X - G and Γ - T scattering rates), and an example of a GaAs/AlGaAs mid-infrared quantum cascade laser. Our simulations suggest that Γ - X scattering can be significant at room temperature but falls off rapidly at lower temperatures. One important factor determining the scattering rate is found to be the energy difference between the Γ- and X-states.

AB - We report on the results of our simulations of Γ - X scattering in GaAs/AlGaAs heterostructures, discussing the importance of the mole fraction, doping density, and lattice and electron temperature in determining the scattering rates. We consider three systems, a single quantum well (for the investigation of Γ - X scattering), a double quantum well (to compare the Γ - X - G and Γ - T scattering rates), and an example of a GaAs/AlGaAs mid-infrared quantum cascade laser. Our simulations suggest that Γ - X scattering can be significant at room temperature but falls off rapidly at lower temperatures. One important factor determining the scattering rate is found to be the energy difference between the Γ- and X-states.

KW - Computer simulation

KW - Semiconducting gallium arsenide

KW - Semiconductor quantum wells

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JO - Acta Physica Polonica A

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Intervalley Scattering and the Role of Indirect Band Gap AlAs Barriers: Application to GaAs/AlGaAs Quantum Cascade Lasers

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