Intervalley scattering in GaAs/AlGaAs quantum wells and quantum cascade lasers

James Mc Tavish; Zoran Ikonić; Dragan Indjin; Paul Harrison

doi:10.1016/j.mejo.2008.06.072

Intervalley scattering in GaAs/AlGaAs quantum wells and quantum cascade lasers

James Mc Tavish, Zoran Ikonić, Dragan Indjin, Paul Harrison

University of Leeds

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The results of simulations of Γ-X scattering in GaAs/AlGaAs quantum wells are presented, discussing the importance of the mole fraction, doping density, and lattice and electron temperatures in determining the scattering rates. A systematic study of Γ-X scattering in GaAs/Al_xGa_1-xAs heterostructures, using a single quantum well to determine the importance of well width, molar concentration x, lattice temperature, and doping density, has been performed. After this we consider a double quantum well to determine the role of intervalley scattering in the transport through single-layer heterostructures, i.e. Γ-X-Γ scattering compared with Γ-Γ scattering. Finally, we estimate the relative importance of intervalley scattering in a GaAs-based quantum-cascade laser device and compare it with other relevant scattering mechanisms important to describe carrier dynamics in the structure. Our simulations suggest that Γ-X scattering can be significant at room temperature but falls off rapidly at lower temperatures.

Original language	English
Pages (from-to)	577-580
Number of pages	4
Journal	Microelectronics Journal
Volume	40
Issue number	3
Early online date	30 Jul 2008
DOIs	https://doi.org/10.1016/j.mejo.2008.06.072
Publication status	Published - 1 Mar 2009
Externally published	Yes

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@article{aea0d058b945409582e0e7a78988ba49,

title = "Intervalley scattering in GaAs/AlGaAs quantum wells and quantum cascade lasers",

abstract = "The results of simulations of Γ-X scattering in GaAs/AlGaAs quantum wells are presented, discussing the importance of the mole fraction, doping density, and lattice and electron temperatures in determining the scattering rates. A systematic study of Γ-X scattering in GaAs/AlxGa1-xAs heterostructures, using a single quantum well to determine the importance of well width, molar concentration x, lattice temperature, and doping density, has been performed. After this we consider a double quantum well to determine the role of intervalley scattering in the transport through single-layer heterostructures, i.e. Γ-X-Γ scattering compared with Γ-Γ scattering. Finally, we estimate the relative importance of intervalley scattering in a GaAs-based quantum-cascade laser device and compare it with other relevant scattering mechanisms important to describe carrier dynamics in the structure. Our simulations suggest that Γ-X scattering can be significant at room temperature but falls off rapidly at lower temperatures.",

keywords = "Carrier dynamics, Intervalley scattering, Quantum cascade laser, Quantum well",

author = "\{Mc Tavish\}, James and Zoran Ikoni{\'c} and Dragan Indjin and Paul Harrison",

note = "Funding Information: The authors are grateful to EPSRC (UK), British Council-DAAD Academic Research Collaboration programme and NATO Collaborative Linkage Grant 983316 for financial support. The authors would like to thank S. H{\"o}fling, University of W{\"u}rzburg, and V. Milanovic, University of Belgrade, for useful discussions.",

year = "2009",

month = mar,

day = "1",

doi = "10.1016/j.mejo.2008.06.072",

language = "English",

volume = "40",

pages = "577--580",

journal = "Microelectronics Journal",

issn = "0026-2692",

publisher = "Elsevier Limited",

number = "3",

}

TY - JOUR

T1 - Intervalley scattering in GaAs/AlGaAs quantum wells and quantum cascade lasers

AU - Mc Tavish, James

AU - Ikonić, Zoran

AU - Indjin, Dragan

AU - Harrison, Paul

N1 - Funding Information: The authors are grateful to EPSRC (UK), British Council-DAAD Academic Research Collaboration programme and NATO Collaborative Linkage Grant 983316 for financial support. The authors would like to thank S. Höfling, University of Würzburg, and V. Milanovic, University of Belgrade, for useful discussions.

PY - 2009/3/1

Y1 - 2009/3/1

N2 - The results of simulations of Γ-X scattering in GaAs/AlGaAs quantum wells are presented, discussing the importance of the mole fraction, doping density, and lattice and electron temperatures in determining the scattering rates. A systematic study of Γ-X scattering in GaAs/AlxGa1-xAs heterostructures, using a single quantum well to determine the importance of well width, molar concentration x, lattice temperature, and doping density, has been performed. After this we consider a double quantum well to determine the role of intervalley scattering in the transport through single-layer heterostructures, i.e. Γ-X-Γ scattering compared with Γ-Γ scattering. Finally, we estimate the relative importance of intervalley scattering in a GaAs-based quantum-cascade laser device and compare it with other relevant scattering mechanisms important to describe carrier dynamics in the structure. Our simulations suggest that Γ-X scattering can be significant at room temperature but falls off rapidly at lower temperatures.

AB - The results of simulations of Γ-X scattering in GaAs/AlGaAs quantum wells are presented, discussing the importance of the mole fraction, doping density, and lattice and electron temperatures in determining the scattering rates. A systematic study of Γ-X scattering in GaAs/AlxGa1-xAs heterostructures, using a single quantum well to determine the importance of well width, molar concentration x, lattice temperature, and doping density, has been performed. After this we consider a double quantum well to determine the role of intervalley scattering in the transport through single-layer heterostructures, i.e. Γ-X-Γ scattering compared with Γ-Γ scattering. Finally, we estimate the relative importance of intervalley scattering in a GaAs-based quantum-cascade laser device and compare it with other relevant scattering mechanisms important to describe carrier dynamics in the structure. Our simulations suggest that Γ-X scattering can be significant at room temperature but falls off rapidly at lower temperatures.

KW - Carrier dynamics

KW - Intervalley scattering

KW - Quantum cascade laser

KW - Quantum well

UR - https://www.scopus.com/pages/publications/61349181334

U2 - 10.1016/j.mejo.2008.06.072

DO - 10.1016/j.mejo.2008.06.072

M3 - Article

AN - SCOPUS:61349181334

SN - 0026-2692

VL - 40

SP - 577

EP - 580

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 3

ER -

Intervalley scattering in GaAs/AlGaAs quantum wells and quantum cascade lasers

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