Interwell intersubband electroluminescence from Si/SiGe quantum cascade emitters

R. Bates; S. A. Lynch; D. J. Paul; Z. Ikonic; R. W. Kelsall; P. Harrison; S. L. Liew; D. J. Norris; A. G. Cullis; W. R. Tribe; D. D. Arnone

doi:10.1063/1.1626003

Interwell intersubband electroluminescence from Si/SiGe quantum cascade emitters

R. Bates, S. A. Lynch, D. J. Paul, Z. Ikonic, R. W. Kelsall, P. Harrison, S. L. Liew, D. J. Norris, A. G. Cullis, W. R. Tribe, D. D. Arnone

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Abstract

The quantum cascade laser provides one potential method for the efficient generation of light from indirect materials such as silicon. While to date electroluminescence results from THz Si/SiGe quantum cascade emitters have shown higher output powers than equivalent III–V emitters, the absence of population inversion within these structures has undermined their potential use for the creation of a laser. Electroluminescence results from Si/SiGe quantum cascade emitters are presented demonstrating intersubband emission from heavy to light holes interwell (diagonal) transitions between 1.2 THz (250 μm) and 1.9 THz (156 μm). Theoretical modeling of the transitions suggests the existence of population inversion within the system.

Original language	English
Pages (from-to)	4092-4094
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	20
Early online date	12 Nov 2003
DOIs	https://doi.org/10.1063/1.1626003
Publication status	Published - 17 Nov 2003
Externally published	Yes

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title = "Interwell intersubband electroluminescence from Si/SiGe quantum cascade emitters",

abstract = "The quantum cascade laser provides one potential method for the efficient generation of light from indirect materials such as silicon. While to date electroluminescence results from THz Si/SiGe quantum cascade emitters have shown higher output powers than equivalent III–V emitters, the absence of population inversion within these structures has undermined their potential use for the creation of a laser. Electroluminescence results from Si/SiGe quantum cascade emitters are presented demonstrating intersubband emission from heavy to light holes interwell (diagonal) transitions between 1.2 THz (250 μm) and 1.9 THz (156 μm). Theoretical modeling of the transitions suggests the existence of population inversion within the system.",

keywords = "Band structure, Electroluminescence, Electron emission, Electron transitions, Electron tunneling, Semiconducting silicon, Semiconductor lasers",

author = "R. Bates and Lynch, {S. A.} and Paul, {D. J.} and Z. Ikonic and Kelsall, {R. W.} and P. Harrison and Liew, {S. L.} and Norris, {D. J.} and Cullis, {A. G.} and Tribe, {W. R.} and Arnone, {D. D.}",

year = "2003",

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doi = "10.1063/1.1626003",

language = "English",

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journal = "Applied Physics Letters",

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T1 - Interwell intersubband electroluminescence from Si/SiGe quantum cascade emitters

AU - Bates, R.

AU - Lynch, S. A.

AU - Paul, D. J.

AU - Ikonic, Z.

AU - Kelsall, R. W.

AU - Harrison, P.

AU - Liew, S. L.

AU - Norris, D. J.

AU - Cullis, A. G.

AU - Tribe, W. R.

AU - Arnone, D. D.

PY - 2003/11/17

Y1 - 2003/11/17

N2 - The quantum cascade laser provides one potential method for the efficient generation of light from indirect materials such as silicon. While to date electroluminescence results from THz Si/SiGe quantum cascade emitters have shown higher output powers than equivalent III–V emitters, the absence of population inversion within these structures has undermined their potential use for the creation of a laser. Electroluminescence results from Si/SiGe quantum cascade emitters are presented demonstrating intersubband emission from heavy to light holes interwell (diagonal) transitions between 1.2 THz (250 μm) and 1.9 THz (156 μm). Theoretical modeling of the transitions suggests the existence of population inversion within the system.

AB - The quantum cascade laser provides one potential method for the efficient generation of light from indirect materials such as silicon. While to date electroluminescence results from THz Si/SiGe quantum cascade emitters have shown higher output powers than equivalent III–V emitters, the absence of population inversion within these structures has undermined their potential use for the creation of a laser. Electroluminescence results from Si/SiGe quantum cascade emitters are presented demonstrating intersubband emission from heavy to light holes interwell (diagonal) transitions between 1.2 THz (250 μm) and 1.9 THz (156 μm). Theoretical modeling of the transitions suggests the existence of population inversion within the system.

KW - Band structure

KW - Electroluminescence

KW - Electron emission

KW - Electron transitions

KW - Electron tunneling

KW - Semiconducting silicon

KW - Semiconductor lasers

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U2 - 10.1063/1.1626003

DO - 10.1063/1.1626003

M3 - Article

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EP - 4094

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

ER -

Interwell intersubband electroluminescence from Si/SiGe quantum cascade emitters

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