Interwell intersubband electroluminescence from Si/SiGe quantum cascade emitters

R. Bates, S. A. Lynch, D. J. Paul, Z. Ikonic, R. W. Kelsall, P. Harrison, S. L. Liew, D. J. Norris, A. G. Cullis, W. R. Tribe, D. D. Arnone

Research output: Contribution to journalArticlepeer-review

77 Citations (Scopus)


The quantum cascade laser provides one potential method for the efficient generation of light from indirect materials such as silicon. While to date electroluminescence results from THz Si/SiGe quantum cascade emitters have shown higher output powers than equivalent III–V emitters, the absence of population inversion within these structures has undermined their potential use for the creation of a laser. Electroluminescence results from Si/SiGe quantum cascade emitters are presented demonstrating intersubband emission from heavy to light holes interwell (diagonal) transitions between 1.2 THz (250 μm) and 1.9 THz (156 μm). Theoretical modeling of the transitions suggests the existence of population inversion within the system.
Original languageEnglish
Pages (from-to)4092-4094
Number of pages3
JournalApplied Physics Letters
Issue number20
Early online date12 Nov 2003
Publication statusPublished - 17 Nov 2003
Externally publishedYes


Dive into the research topics of 'Interwell intersubband electroluminescence from Si/SiGe quantum cascade emitters'. Together they form a unique fingerprint.

Cite this