Intraband absorption in InAs/GaAs quantum dot infrared photodetectors - Effective mass versus k × p modelling

N. Vukmirović, Ž Gaević, Z. Ikonić, D. Indjin, P. Harrison, V. Milanović

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)

Abstract

Theoretical modelling of the intraband absorption spectrum in InAs/GaAs quantum dot infrared photodetectors is performed for several typical structures reported in the literature. The calculations are performed within the framework of the two methods: a simple and so far widely used effective mass method with the values of conduction band offset and the effective mass modified to take account of the effects of strain and band mixing on average and the more realistic eight-band k × p method with the strain distribution taken into account via the continuum mechanical model. Both methods give qualitatively the same results; however, the peak positions obtained within the effective mass approach are blue shifted and the absorption cross sections are overestimated, compared to the more accurate k × p approach.

Original languageEnglish
Article number021
Pages (from-to)1098-1104
Number of pages7
JournalSemiconductor Science and Technology
Volume21
Issue number8
Early online date3 Jul 2006
DOIs
Publication statusPublished - 1 Aug 2006
Externally publishedYes

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