Investigation of ion induced bending mechanism for nanostructures

Nitul S. Rajput, Zhen Tong, Xichun Luo

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Ion induced bending is a promising controlled technique for manipulating nanoscale structures. However, the underlying mechanism of the process is not well understood. In this letter, we report a detailed study of the bending mechanism of Si nanowires (NWs) under Ga+ irradiation. The microstructural changes in theNWdue to ion beam irradiation are studied and molecular dynamics simulations are used to explore the ion-NWinteraction processes. The simulation results are compared with the microstructural studies of theNW. The investigations inform a generic understanding of the bending process in crystalline materials, which we suggest to be feasible as a versatile manipulation and integration technique in nanotechnology.

Original languageEnglish
Article number015002
Number of pages8
JournalMaterials Research Express
Volume2
Issue number1
Early online date24 Dec 2014
DOIs
Publication statusPublished - Jan 2015
Externally publishedYes

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