Investigation of ion induced bending mechanism for nanostructures

Nitul S. Rajput, Zhen Tong, Xichun Luo

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Ion induced bending is a promising controlled technique for manipulating nanoscale structures. However, the underlying mechanism of the process is not well understood. In this letter, we report a detailed study of the bending mechanism of Si nanowires (NWs) under Ga+ irradiation. The microstructural changes in theNWdue to ion beam irradiation are studied and molecular dynamics simulations are used to explore the ion-NWinteraction processes. The simulation results are compared with the microstructural studies of theNW. The investigations inform a generic understanding of the bending process in crystalline materials, which we suggest to be feasible as a versatile manipulation and integration technique in nanotechnology.

Original languageEnglish
Article number015002
Number of pages8
JournalMaterials Research Express
Volume2
Issue number1
Early online date24 Dec 2014
DOIs
Publication statusPublished - Jan 2015
Externally publishedYes

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Nanostructures
Irradiation
Ions
Nanotechnology
Ion beams
Nanowires
Molecular dynamics
Crystalline materials
Computer simulation

Cite this

@article{1e9743ed4a854008a9457d4b2df07f74,
title = "Investigation of ion induced bending mechanism for nanostructures",
abstract = "Ion induced bending is a promising controlled technique for manipulating nanoscale structures. However, the underlying mechanism of the process is not well understood. In this letter, we report a detailed study of the bending mechanism of Si nanowires (NWs) under Ga+ irradiation. The microstructural changes in theNWdue to ion beam irradiation are studied and molecular dynamics simulations are used to explore the ion-NWinteraction processes. The simulation results are compared with the microstructural studies of theNW. The investigations inform a generic understanding of the bending process in crystalline materials, which we suggest to be feasible as a versatile manipulation and integration technique in nanotechnology.",
keywords = "Focused ion beam (FIB), Ion matter interaction, Nanostructure manipulation, Si nanowire",
author = "Rajput, {Nitul S.} and Zhen Tong and Xichun Luo",
year = "2015",
month = "1",
doi = "10.1088/2053-1591/2/1/015002",
language = "English",
volume = "2",
journal = "Materials Research Express",
issn = "2053-1591",
publisher = "IOP Publishing Ltd.",
number = "1",

}

Investigation of ion induced bending mechanism for nanostructures. / Rajput, Nitul S.; Tong, Zhen; Luo, Xichun.

In: Materials Research Express, Vol. 2, No. 1, 015002, 01.2015.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Investigation of ion induced bending mechanism for nanostructures

AU - Rajput, Nitul S.

AU - Tong, Zhen

AU - Luo, Xichun

PY - 2015/1

Y1 - 2015/1

N2 - Ion induced bending is a promising controlled technique for manipulating nanoscale structures. However, the underlying mechanism of the process is not well understood. In this letter, we report a detailed study of the bending mechanism of Si nanowires (NWs) under Ga+ irradiation. The microstructural changes in theNWdue to ion beam irradiation are studied and molecular dynamics simulations are used to explore the ion-NWinteraction processes. The simulation results are compared with the microstructural studies of theNW. The investigations inform a generic understanding of the bending process in crystalline materials, which we suggest to be feasible as a versatile manipulation and integration technique in nanotechnology.

AB - Ion induced bending is a promising controlled technique for manipulating nanoscale structures. However, the underlying mechanism of the process is not well understood. In this letter, we report a detailed study of the bending mechanism of Si nanowires (NWs) under Ga+ irradiation. The microstructural changes in theNWdue to ion beam irradiation are studied and molecular dynamics simulations are used to explore the ion-NWinteraction processes. The simulation results are compared with the microstructural studies of theNW. The investigations inform a generic understanding of the bending process in crystalline materials, which we suggest to be feasible as a versatile manipulation and integration technique in nanotechnology.

KW - Focused ion beam (FIB)

KW - Ion matter interaction

KW - Nanostructure manipulation

KW - Si nanowire

UR - http://www.scopus.com/inward/record.url?scp=84938139853&partnerID=8YFLogxK

UR - http://iopscience.iop.org/journal/2053-1591

U2 - 10.1088/2053-1591/2/1/015002

DO - 10.1088/2053-1591/2/1/015002

M3 - Article

VL - 2

JO - Materials Research Express

JF - Materials Research Express

SN - 2053-1591

IS - 1

M1 - 015002

ER -