Investigations on the characterization of ion implanted hexagonal boron nitride

E. Aradi; S. R. Naidoo; R. M. Erasmus; B. Julies; T. E. Derry

doi:10.1016/j.nimb.2012.12.118

Investigations on the characterization of ion implanted hexagonal boron nitride

E. Aradi, S. R. Naidoo, R. M. Erasmus, B. Julies, T. E. Derry

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Abstract

The effect of ion implantation on hexagonal boron nitride (h-BN) is studied herein. We use boron as an ion of choice to introduce radiation damage into h-BN, at fluences ranging from 1 1014-1 1016 ions/cm2 and implantation energy ranges from 40 to 160 keV. The thermal dependence is also investigated by varying the annealing temperature from room temperature to 400 °C after implantation. Raman spectroscopy showed Raman active defects one of which is possibly related to the formation of cubic boron nitride nanocrystals (nc-BN) within the implanted range. The relationship of these defect induced Raman active peaks was investigated by varying the implantation parameters. The preliminary Transmission Electron Microscopy (TEM) results also are reported briefly.

Original language	English
Pages (from-to)	214-217
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	307
Early online date	25 Jan 2013
DOIs	https://doi.org/10.1016/j.nimb.2012.12.118
Publication status	Published - 15 Jul 2013
Externally published	Yes

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Aradi, E., Naidoo, S. R., Erasmus, R. M., Julies, B., & Derry, T. E. (2013). Investigations on the characterization of ion implanted hexagonal boron nitride. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 307, 214-217. https://doi.org/10.1016/j.nimb.2012.12.118

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keywords = "Boron nitride, Ion implantation, Raman spectroscopy, Transmission electron microscopy",

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AU - Aradi, E.

AU - Naidoo, S. R.

AU - Erasmus, R. M.

AU - Julies, B.

AU - Derry, T. E.

PY - 2013/7/15

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N2 - The effect of ion implantation on hexagonal boron nitride (h-BN) is studied herein. We use boron as an ion of choice to introduce radiation damage into h-BN, at fluences ranging from 1 1014-1 1016 ions/cm2 and implantation energy ranges from 40 to 160 keV. The thermal dependence is also investigated by varying the annealing temperature from room temperature to 400 °C after implantation. Raman spectroscopy showed Raman active defects one of which is possibly related to the formation of cubic boron nitride nanocrystals (nc-BN) within the implanted range. The relationship of these defect induced Raman active peaks was investigated by varying the implantation parameters. The preliminary Transmission Electron Microscopy (TEM) results also are reported briefly.

AB - The effect of ion implantation on hexagonal boron nitride (h-BN) is studied herein. We use boron as an ion of choice to introduce radiation damage into h-BN, at fluences ranging from 1 1014-1 1016 ions/cm2 and implantation energy ranges from 40 to 160 keV. The thermal dependence is also investigated by varying the annealing temperature from room temperature to 400 °C after implantation. Raman spectroscopy showed Raman active defects one of which is possibly related to the formation of cubic boron nitride nanocrystals (nc-BN) within the implanted range. The relationship of these defect induced Raman active peaks was investigated by varying the implantation parameters. The preliminary Transmission Electron Microscopy (TEM) results also are reported briefly.

KW - Boron nitride

KW - Ion implantation

KW - Raman spectroscopy

KW - Transmission electron microscopy

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