Abstract
The effect of ion implantation on hexagonal boron nitride (h-BN) is studied herein. We use boron as an ion of choice to introduce radiation damage into h-BN, at fluences ranging from 1 1014-1 1016 ions/cm2 and implantation energy ranges from 40 to 160 keV. The thermal dependence is also investigated by varying the annealing temperature from room temperature to 400 °C after implantation. Raman spectroscopy showed Raman active defects one of which is possibly related to the formation of cubic boron nitride nanocrystals (nc-BN) within the implanted range. The relationship of these defect induced Raman active peaks was investigated by varying the implantation parameters. The preliminary Transmission Electron Microscopy (TEM) results also are reported briefly.
| Original language | English |
|---|---|
| Pages (from-to) | 214-217 |
| Number of pages | 4 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 307 |
| Early online date | 25 Jan 2013 |
| DOIs | |
| Publication status | Published - 15 Jul 2013 |
| Externally published | Yes |
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Investigations on the characterization of ion implanted hexagonal boron nitride. / Aradi, E.; Naidoo, S. R.; Erasmus, R. M.; Julies, B.; Derry, T. E.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 307, 15.07.2013, p. 214-217.Research output: Contribution to journal › Article
TY - JOUR
T1 - Investigations on the characterization of ion implanted hexagonal boron nitride
AU - Aradi, E.
AU - Naidoo, S. R.
AU - Erasmus, R. M.
AU - Julies, B.
AU - Derry, T. E.
PY - 2013/7/15
Y1 - 2013/7/15
N2 - The effect of ion implantation on hexagonal boron nitride (h-BN) is studied herein. We use boron as an ion of choice to introduce radiation damage into h-BN, at fluences ranging from 1 1014-1 1016 ions/cm2 and implantation energy ranges from 40 to 160 keV. The thermal dependence is also investigated by varying the annealing temperature from room temperature to 400 °C after implantation. Raman spectroscopy showed Raman active defects one of which is possibly related to the formation of cubic boron nitride nanocrystals (nc-BN) within the implanted range. The relationship of these defect induced Raman active peaks was investigated by varying the implantation parameters. The preliminary Transmission Electron Microscopy (TEM) results also are reported briefly.
AB - The effect of ion implantation on hexagonal boron nitride (h-BN) is studied herein. We use boron as an ion of choice to introduce radiation damage into h-BN, at fluences ranging from 1 1014-1 1016 ions/cm2 and implantation energy ranges from 40 to 160 keV. The thermal dependence is also investigated by varying the annealing temperature from room temperature to 400 °C after implantation. Raman spectroscopy showed Raman active defects one of which is possibly related to the formation of cubic boron nitride nanocrystals (nc-BN) within the implanted range. The relationship of these defect induced Raman active peaks was investigated by varying the implantation parameters. The preliminary Transmission Electron Microscopy (TEM) results also are reported briefly.
KW - Boron nitride
KW - Ion implantation
KW - Raman spectroscopy
KW - Transmission electron microscopy
UR - http://www.scopus.com/inward/record.url?scp=84885171813&partnerID=8YFLogxK
UR - https://www.journals.elsevier.com/nuclear-instruments-and-methods-in-physics-research-section-b-beam-interactions-with-materials-and-atoms
U2 - 10.1016/j.nimb.2012.12.118
DO - 10.1016/j.nimb.2012.12.118
M3 - Article
AN - SCOPUS:84885171813
VL - 307
SP - 214
EP - 217
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
ER -