Ion beam deposited epitaxial thin silicon films

Kevin G. Orrman-Rossiter, Amir H. Al-Bayati, D. G. Armour, S. E. Donnelly, J. A. van den Berg

Research output: Contribution to journalArticle

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Abstract

Deposition of thin films using low energy, mass-separated ion beams is a potentially important low temperature method of producing epitaxial layers. In these experiments silicon films were grown on Si (001) substrates using 10-200 eV 28Si+ and 30Si+ ions at substrate temperatures in the range 273-1073 K, under ultrahigh-vacuum conditions (deposition pressure < 2 ×10 -7Pa). The film crystalhnity was assessed in situ using medium energy ion scattering (MEIS). Films of crystallinity comparable to bulk samples were grown using 10-40 eV 28Si+ and 30Si+ ions at deposition temperatures in the range 623-823 K. These experiments confirmed the role of key experimental parameters such as ion energy, substrate temperature during deposition, and the surface treatment prior to deposition. It was found that a high temperature in situ anneal (1350-1450 K) gave the best results for epitaxial nucleation, whereas low energy (20-40 eV) Cl+ ion bombardment resulted in amorphous film growth. The deposition energy for good epitaxial growth indicates that it is necessary to provide enough energy to induce local mobility but not to cause atomic displacements leading to the buildup of stable defects, e.g. divacancies, below the surface layer of the growing film.

Original languageEnglish
Pages (from-to)197-202
Number of pages6
JournalNuclear Inst. and Methods in Physics Research, B
Volume59-60
Issue numberPART 1
DOIs
Publication statusPublished - 1 Jul 1991
Externally publishedYes

Fingerprint

Silicon
silicon films
Ion beams
ion beams
Ions
Film growth
energy
ions
Substrates
Temperature
Epitaxial layers
Ultrahigh vacuum
ion scattering
Amorphous films
Ion bombardment
surface treatment
Epitaxial growth
ultrahigh vacuum
temperature
Surface treatment

Cite this

Orrman-Rossiter, Kevin G. ; Al-Bayati, Amir H. ; Armour, D. G. ; Donnelly, S. E. ; van den Berg, J. A. / Ion beam deposited epitaxial thin silicon films. In: Nuclear Inst. and Methods in Physics Research, B. 1991 ; Vol. 59-60, No. PART 1. pp. 197-202.
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Ion beam deposited epitaxial thin silicon films. / Orrman-Rossiter, Kevin G.; Al-Bayati, Amir H.; Armour, D. G.; Donnelly, S. E.; van den Berg, J. A.

In: Nuclear Inst. and Methods in Physics Research, B, Vol. 59-60, No. PART 1, 01.07.1991, p. 197-202.

Research output: Contribution to journalArticle

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