Ion beam deposition and in-situ ion beam analysis

A. H. Al-Bayati, K. G. Orrman-Rossiter, D. G. Armour, J. A. Van den Berg, S. E. Donnelly

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The direct deposition in thin films and the production of very shallow junctions by ultralow energy ion implantation involves the interaction of ions with only the outermost surface layers of a solid. Quantitative structural and composition analysis of the grown or implanted layers requires the use of techniques with extremely high depth resolution. The growth of Si epitaxially on Si (100) substrates prepared by a variety of ion beam and thermal treatments has illustrated the complex radiation effects that occur in the bombardment energy range from 20 to 500 eV. These effects have been studied using medium energy ion scattering in the double alignment mode. With a 50 keV H+ beam, a high resolution electrostatic analyser and incidence and emergence directions aligned with the [111̄] and [3̄3̄1] directions, a depth resolution of 3 Å can be obtained. The effects of ion energy on the structure of grown films and on the damage in the substrate during pretreatment with Cl+ and Ar+ ions will be described.

LanguageEnglish
Pages109-119
Number of pages11
JournalNuclear Inst. and Methods in Physics Research, B
Volume63
Issue number1-2
DOIs
Publication statusPublished - 1 Jan 1992
Externally publishedYes

Fingerprint

Ion beams
ion beams
Ions
ions
energy
Radiation effects
ion scattering
radiation effects
Substrates
structural analysis
Ion implantation
pretreatment
ion implantation
bombardment
Electrostatics
surface layers
incidence
alignment
Heat treatment
Scattering

Cite this

Al-Bayati, A. H. ; Orrman-Rossiter, K. G. ; Armour, D. G. ; Van den Berg, J. A. ; Donnelly, S. E. / Ion beam deposition and in-situ ion beam analysis. In: Nuclear Inst. and Methods in Physics Research, B. 1992 ; Vol. 63, No. 1-2. pp. 109-119.
@article{f696d27bdb8f4ab79d08d4552ecae2df,
title = "Ion beam deposition and in-situ ion beam analysis",
abstract = "The direct deposition in thin films and the production of very shallow junctions by ultralow energy ion implantation involves the interaction of ions with only the outermost surface layers of a solid. Quantitative structural and composition analysis of the grown or implanted layers requires the use of techniques with extremely high depth resolution. The growth of Si epitaxially on Si (100) substrates prepared by a variety of ion beam and thermal treatments has illustrated the complex radiation effects that occur in the bombardment energy range from 20 to 500 eV. These effects have been studied using medium energy ion scattering in the double alignment mode. With a 50 keV H+ beam, a high resolution electrostatic analyser and incidence and emergence directions aligned with the [111̄] and [3̄3̄1] directions, a depth resolution of 3 {\AA} can be obtained. The effects of ion energy on the structure of grown films and on the damage in the substrate during pretreatment with Cl+ and Ar+ ions will be described.",
author = "Al-Bayati, {A. H.} and Orrman-Rossiter, {K. G.} and Armour, {D. G.} and {Van den Berg}, {J. A.} and Donnelly, {S. E.}",
year = "1992",
month = "1",
day = "1",
doi = "10.1016/0168-583X(92)95179-U",
language = "English",
volume = "63",
pages = "109--119",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-2",

}

Ion beam deposition and in-situ ion beam analysis. / Al-Bayati, A. H.; Orrman-Rossiter, K. G.; Armour, D. G.; Van den Berg, J. A.; Donnelly, S. E.

In: Nuclear Inst. and Methods in Physics Research, B, Vol. 63, No. 1-2, 01.01.1992, p. 109-119.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ion beam deposition and in-situ ion beam analysis

AU - Al-Bayati, A. H.

AU - Orrman-Rossiter, K. G.

AU - Armour, D. G.

AU - Van den Berg, J. A.

AU - Donnelly, S. E.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - The direct deposition in thin films and the production of very shallow junctions by ultralow energy ion implantation involves the interaction of ions with only the outermost surface layers of a solid. Quantitative structural and composition analysis of the grown or implanted layers requires the use of techniques with extremely high depth resolution. The growth of Si epitaxially on Si (100) substrates prepared by a variety of ion beam and thermal treatments has illustrated the complex radiation effects that occur in the bombardment energy range from 20 to 500 eV. These effects have been studied using medium energy ion scattering in the double alignment mode. With a 50 keV H+ beam, a high resolution electrostatic analyser and incidence and emergence directions aligned with the [111̄] and [3̄3̄1] directions, a depth resolution of 3 Å can be obtained. The effects of ion energy on the structure of grown films and on the damage in the substrate during pretreatment with Cl+ and Ar+ ions will be described.

AB - The direct deposition in thin films and the production of very shallow junctions by ultralow energy ion implantation involves the interaction of ions with only the outermost surface layers of a solid. Quantitative structural and composition analysis of the grown or implanted layers requires the use of techniques with extremely high depth resolution. The growth of Si epitaxially on Si (100) substrates prepared by a variety of ion beam and thermal treatments has illustrated the complex radiation effects that occur in the bombardment energy range from 20 to 500 eV. These effects have been studied using medium energy ion scattering in the double alignment mode. With a 50 keV H+ beam, a high resolution electrostatic analyser and incidence and emergence directions aligned with the [111̄] and [3̄3̄1] directions, a depth resolution of 3 Å can be obtained. The effects of ion energy on the structure of grown films and on the damage in the substrate during pretreatment with Cl+ and Ar+ ions will be described.

UR - http://www.scopus.com/inward/record.url?scp=0000171672&partnerID=8YFLogxK

U2 - 10.1016/0168-583X(92)95179-U

DO - 10.1016/0168-583X(92)95179-U

M3 - Article

VL - 63

SP - 109

EP - 119

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

T2 - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-2

ER -