Ion Implantation of Graphene - Toward IC Compatible Technologies

U. Bangert, W. Pierce, D.M. Kepaptsoglou, Q. Ramasse, R. Zan, M.H. Gass, J.A. Van Den Berg, C.B. Boothroyd, J. Amani, H. Hofsäss

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Abstract

Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for the first time directly that graphene can be doped with B and N via ion implantation and that the retention is in good agreement with predictions from calculation-based literature values. Atomic resolution high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites. © 2013 American Chemical Society.
Original languageEnglish
Pages (from-to)4902-4907
Number of pages6
JournalNano Letters
Volume13
Issue number10
Early online date23 Sep 2013
DOIs
Publication statusPublished - 9 Oct 2013
Externally publishedYes

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    Bangert, U., Pierce, W., Kepaptsoglou, D. M., Ramasse, Q., Zan, R., Gass, M. H., Van Den Berg, J. A., Boothroyd, C. B., Amani, J., & Hofsäss, H. (2013). Ion Implantation of Graphene - Toward IC Compatible Technologies. Nano Letters, 13(10), 4902-4907. https://doi.org/10.1021/nl402812y