Ion Implantation of Graphene - Toward IC Compatible Technologies

U. Bangert, W. Pierce, D.M. Kepaptsoglou, Q. Ramasse, R. Zan, M.H. Gass, J.A. Van Den Berg, C.B. Boothroyd, J. Amani, H. Hofsäss

Research output: Contribution to journalArticlepeer-review

169 Citations (Scopus)


Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for the first time directly that graphene can be doped with B and N via ion implantation and that the retention is in good agreement with predictions from calculation-based literature values. Atomic resolution high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites. © 2013 American Chemical Society.
Original languageEnglish
Pages (from-to)4902-4907
Number of pages6
JournalNano Letters
Issue number10
Early online date23 Sep 2013
Publication statusPublished - 9 Oct 2013
Externally publishedYes


Dive into the research topics of 'Ion Implantation of Graphene - Toward IC Compatible Technologies'. Together they form a unique fingerprint.

Cite this