Ion Implantation of Graphene - Toward IC Compatible Technologies

U. Bangert, W. Pierce, D.M. Kepaptsoglou, Q. Ramasse, R. Zan, M.H. Gass, J.A. Van Den Berg, C.B. Boothroyd, J. Amani, H. Hofsäss

Research output: Contribution to journalArticle

108 Citations (Scopus)

Abstract

Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for the first time directly that graphene can be doped with B and N via ion implantation and that the retention is in good agreement with predictions from calculation-based literature values. Atomic resolution high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites. © 2013 American Chemical Society.
LanguageEnglish
Pages4902-4907
Number of pages6
JournalNano Letters
Volume13
Issue number10
Early online date23 Sep 2013
DOIs
Publication statusPublished - 9 Oct 2013
Externally publishedYes

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Graphite
Ion implantation
Graphene
ion implantation
graphene
Electron energy loss spectroscopy
spectroscopy
Electron microscopy
implantation
electron microscopy
energy dissipation
Doping (additives)
Spectroscopy
electron energy
Ions
Semiconductor materials
Imaging techniques
Fabrication
Atoms
Defects

Cite this

Bangert, U., Pierce, W., Kepaptsoglou, D. M., Ramasse, Q., Zan, R., Gass, M. H., ... Hofsäss, H. (2013). Ion Implantation of Graphene - Toward IC Compatible Technologies. Nano Letters, 13(10), 4902-4907. https://doi.org/10.1021/nl402812y
Bangert, U. ; Pierce, W. ; Kepaptsoglou, D.M. ; Ramasse, Q. ; Zan, R. ; Gass, M.H. ; Van Den Berg, J.A. ; Boothroyd, C.B. ; Amani, J. ; Hofsäss, H. / Ion Implantation of Graphene - Toward IC Compatible Technologies. In: Nano Letters. 2013 ; Vol. 13, No. 10. pp. 4902-4907.
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Bangert, U, Pierce, W, Kepaptsoglou, DM, Ramasse, Q, Zan, R, Gass, MH, Van Den Berg, JA, Boothroyd, CB, Amani, J & Hofsäss, H 2013, 'Ion Implantation of Graphene - Toward IC Compatible Technologies', Nano Letters, vol. 13, no. 10, pp. 4902-4907. https://doi.org/10.1021/nl402812y

Ion Implantation of Graphene - Toward IC Compatible Technologies. / Bangert, U.; Pierce, W.; Kepaptsoglou, D.M.; Ramasse, Q.; Zan, R.; Gass, M.H.; Van Den Berg, J.A.; Boothroyd, C.B.; Amani, J.; Hofsäss, H.

In: Nano Letters, Vol. 13, No. 10, 09.10.2013, p. 4902-4907.

Research output: Contribution to journalArticle

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AU - Bangert, U.

AU - Pierce, W.

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Bangert U, Pierce W, Kepaptsoglou DM, Ramasse Q, Zan R, Gass MH et al. Ion Implantation of Graphene - Toward IC Compatible Technologies. Nano Letters. 2013 Oct 9;13(10):4902-4907. https://doi.org/10.1021/nl402812y