Ion sputter-deposition and in-air crystallisation of Cr2AlC films

V. Vishnyakov, O. Crisan, P. Dobrosz, J. S. Colligon

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Ternary alloys of composition close to Cr2AlC have been deposited by ion beam sputtering onto unheated and heated to 380 °C Si substrates. As-deposited films are amorphous. Annealing of the film in vacuum at 700 °C leads to crystallisation with 39.2 nm crystallites. Crystallisation also can be achieved by annealing in air but there is also partial oxidation of the film surface to the depth of approximately 120 nm, which represents an oxide layer less than 5% of the total film thickness. There is an increase of lattice size along the c-axis during crystallisation in air, which indicates a small incorporation of oxygen. Film structure and crystallisation have also been analysed by Raman spectroscopy. Changes in Raman spectra in Cr2AlC have been correlated with the film crystallisation and it was observed that MAX-phase related peaks become clearly defined for the crystallised film. Crown

Original languageEnglish
Pages (from-to)61-65
Number of pages5
JournalVacuum
Volume100
Early online date8 Aug 2013
DOIs
Publication statusPublished - Feb 2014
Externally publishedYes

Fingerprint

Sputter deposition
Crystallization
Ions
crystallization
air
Air
ions
Annealing
Ternary alloys
Amorphous films
annealing
Crystallites
Crystal lattices
ternary alloys
Oxides
Ion beams
Sputtering
Film thickness
Raman spectroscopy
Raman scattering

Cite this

Vishnyakov, V. ; Crisan, O. ; Dobrosz, P. ; Colligon, J. S. / Ion sputter-deposition and in-air crystallisation of Cr2AlC films. In: Vacuum. 2014 ; Vol. 100. pp. 61-65.
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Ion sputter-deposition and in-air crystallisation of Cr2AlC films. / Vishnyakov, V.; Crisan, O.; Dobrosz, P.; Colligon, J. S.

In: Vacuum, Vol. 100, 02.2014, p. 61-65.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ion sputter-deposition and in-air crystallisation of Cr2AlC films

AU - Vishnyakov, V.

AU - Crisan, O.

AU - Dobrosz, P.

AU - Colligon, J. S.

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AB - Ternary alloys of composition close to Cr2AlC have been deposited by ion beam sputtering onto unheated and heated to 380 °C Si substrates. As-deposited films are amorphous. Annealing of the film in vacuum at 700 °C leads to crystallisation with 39.2 nm crystallites. Crystallisation also can be achieved by annealing in air but there is also partial oxidation of the film surface to the depth of approximately 120 nm, which represents an oxide layer less than 5% of the total film thickness. There is an increase of lattice size along the c-axis during crystallisation in air, which indicates a small incorporation of oxygen. Film structure and crystallisation have also been analysed by Raman spectroscopy. Changes in Raman spectra in Cr2AlC have been correlated with the film crystallisation and it was observed that MAX-phase related peaks become clearly defined for the crystallised film. Crown

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KW - Crystallisation

KW - Ion sputtering

KW - Raman spectroscopy

KW - Ternary carbides

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